• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.137-140
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• 2005

Organic light emitting transistors (OLET) which are vertically combined with the organic static induction transistor (OSIT) and organic light emitting diode (OLED) are fabricated and the device characteristics are investigated. High luminance modulations by relatively low gate voltages are obtained. In order to realize the flexible electronic circuits and displays, we have fabricated OSIT on plastic substrates. The OSIT fabricated on plastic substrate show almost same characteristics comparing with those of nonflexible OSIT on glass substrate. The OLET described here is a suitable element for flexible sheet displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.292-295
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• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.2234-2236
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• 1997

The SIT, a Static Induction Transistor, is a semiconductor switch that is also called the power junction field-effect transistor (power JFET). Its characteristics are similar to a MOSFET except that its power level is higher and its maximum frequency of operation is lower. The normal method to protect against internal circuit transients of the form of di/dt or dv/dt is the use of snubber circuits. However, the limits of di/dt and dv/dt are high enough for the SIT that it is possible to operate without snubber circuits. SITs can be connected in parallel in order to cope with higher load currents that the value of an individual device rating. The purpose of this study is to investigate the parallel operation of SITs. In this experiment, we used a half-bridge inverter, the output of inverter is up to almost 1MHz and 2kW. Experimental results show that the operation of parallel connected SITs are facilitated individually good current sharing. The reason is the positive temperature coefficient of resistance of the SIT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.5-5
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• 2010

Gallium Nitride(GaN)는 LED, Laser 등에 사용되는 광학적 특성뿐만 아니라 Wide Bandgap의 전기적 특성 또한 주목받고 있다. 본 논문은 600V급 GaN(Gallium Nitride) Power SIT(Static Induction Transistor)에 대해서 Design Parameter 변환에 따른 전기적 (Breakdown Voltgage, On-state Voltage Drop)특성과 열적 (Lattice Temperature Distribution)특성변화를 분석하여 소자가 갖는 구조적 손실을 최소화하였다. 또한, 기존 실리콘 기반 전력소자와 특성 비교를 통하여 GaN Power SIT의 우수성을 증명하였다. GaN Power SIT 소자 설계 및 최적화를 위해서 Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하였다. 실험 결과 수 ${\mu}m$의 소자 두께만으로도 실리콘 전력소자에 비해 더 뛰어난 열 특성과 더 적은 전력소모를 갖는 600V급 GaN Power SIT 소자를 구현할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.196-197
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• 2006

In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.

• 센서학회지
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• 제4권4호
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• pp.29-40
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• 1995

본논문(本論文)에서는 정전유도(靜電誘導) 트랜지스터의 잡음원인분석(雜音原因分析)을 위하여 직류(直流) 및 잡음특성(雜音特性), 잔존성분(殘存成分), 입력용량등(入力容量等)의 정무화(定武化)에 필요(必要)한 잡음(雜音) 등가회로(等價回路)를 제안(提案)하였다. 가장 단순(單純)한 잡음(雜音) 등가회로(等價回路)는 정전유도(靜電誘導) 트랜지스터의 동작원리(動作原理)에 의한 모델이며, 이 모델에 의한 실측치(實測値)가 산탄(shot) 잡음(雜音)보다 작게 나타났다. 소스 저항(抵抗)이 삽입(揷入)된 등가회로(等價回路)에서는 소스 저항(抵抗)의 부귀환효과(負歸還效果)에 의하여 산탄 잡음(雜音)이 저감(低減)됨을 확인(確認)하였다. 정확(正確)한 잡음저감원인(雜音低減原因)을 분석(分析)하기 위하여 소스 저항(抵抗)과 드레인 저항(低抗)의 계산식(計算式)을 유도(誘導)하기 위한 등가회로(等價回路)를 제안(提案)하였다. 등가회로(等價回路) 확인(確認) 실험(實驗)에서는 잔존성분(殘存成分)에 대한 신호원저항(信號源抵抗)과 출력부하저항(出力負荷抵抗)의 영향(影響)은 작으며, 잔존성분(殘存成分)은 입력환산등가잡음저항(入力換算等價雜音抵抗)으로 나타낼 수 있다. 또한, 입력용량(入力容量)은 부하저항(負荷抵抗)이 $0{\Omega}$일 때 13.6pF이며, 게이트 배선등(配線等) 정전유도(靜電誘導) 트랜지스터 동작(動作)에 직접(直接) 관여(關與)하지 않는 용량(容量)은 10pF정도(程度)이다.