• Title/Summary/Keyword: State Of Charge

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A Study on the Storage Life Estimation Method for Decrease of Muzzle Velocity using Gamma Process Model (감마과정 모델을 적용한 포구속도 저하량에 따른 저장수명 예측기법 연구)

  • Park, Sung-Ho;Kim, Jae-Hoon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.16 no.5
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    • pp.639-645
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    • 2013
  • The aim of the study is to investigate the method to estimate a storage life of propelling charge on the decrease of muzzle velocity by stochastic gamma process model. It is required to establish criterion for state failure to estimate the storage life and it is defined in this paper as a muzzle velocity difference between reference value and maximum allowable standard deviation multiplied by 6. The relationship between storage time and muzzle velocity is investigated by nonlinear regression analysis. The stochastic gamma process model is used to estimated the state distribution and the life distribution for storage time for 155mm propelling charge KM4A2 because the regression analysis is a deterministic method and it can't describe the distribution of life for storage time.

A Study on the Algorithm of Battery SOH Estimation for Battery Management System(BMS) (배터리관리시스템(BMS)을 이용한 배터리 잔존수명(SOH) 추정 알고리즘에 관한 연구)

  • Seo, Cheol-Sik;Moon, Jong-Hyun;Park, Jae-Wook;Kim, Geum-Soo;Kim, Dong-Hee
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.317-320
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    • 2008
  • This paper presents the battery management system(BMS) for the optimum conditions of the lead-Acid battery in UPS. The proposed system controls the over and under currents of battery for protecting and it was applied algorithm for optimum conditions to estimate the State Of Charge(SOC) and State Of Health(SOH) in charge or discharge mode. It approved the performance and the algorithm for the estimation of SOH, through the experiments which using the charge and discharge tester and the field tests.

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Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs

  • Gasparyan, Ferdinand V.;Aroutiounian, Vladimir M.
    • Advances in nano research
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    • v.3 no.1
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    • pp.49-54
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    • 2015
  • The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

The State of Charge Estimation for Lithium-Polymer Battery using a PI Observer (PI 상태관측기를 이용한 리튬폴리머 배터리 SOC 추정)

  • Lee, Junwon;Jo, Jongmin;Kim, Sungsoo;Cha, Hanju
    • The Transactions of the Korean Institute of Power Electronics
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    • v.20 no.2
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    • pp.175-181
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    • 2015
  • In this study, a lithium polymer battery (LiPB) is simply expressed by a primary RC equivalent model. The PI state observer is designed in Matlab/Simulink. The non-linear relationship with the OCV-SOC is represented to be linearized with 0.1 pu intervals by using battery parameters obtained by constant-current pulse discharge. A state equation is configured based on battery parameters. The state equation, which applied Peukert's law, can estimate SOC more accurately. SOC estimation capability was analyzed by utilizing reduced Federal Test Procedure (FTP-72) current profile and using a bi-directional DC-DC converter at temperature ($25^{\circ}C$). The PI state observer, which is designed in this study, indicated a SOC estimation error rate of ${\pm}2%$ in any of the initial SOC states. The PI state observer confirms a strong SOC estimation performance despite disturbances, such as modeling errors and noise.

Development of Charging Control Device Using the Intelligent Control Method (지능제어기법에 의한 충전제어 장치의 개발)

  • Kim, Dong-Wan;Hwang, Gi-Hyun;Lee, Sang-Cheol
    • Proceedings of the KIEE Conference
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    • 2001.07e
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    • pp.116-119
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    • 2001
  • In this research, we detect the charge state within $0.1{\sim}0.3[A]$ and develop the intelligent digital charge device by applying a fine pulse signal using PWM inverter and Proportional-Integral(PI) controller which uses micro -processor and intelligent technique. The ripple rate is within ${\pm}1%$, and the indicator error rate of full charge state is within ${\pm}1%$, and the voltage stability is within ${\pm}0.1[V]$, and the accuracy of voltage detect is 48[V] and ${\pm}0.5[V]$ in the reference of 100[A].

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Optimal Scheduling for Dynamic Ice Storage System with Perfectly Predicted Cooling Loads (동적제빙형 빙축열시스템에 대한 최적운전계획)

  • Lee, Kyoung-Ho;Lee, Sang-Ryoul;Choi, Byoung-Youn;Kwon, Seong-Chul
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.286-291
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    • 2001
  • This paper describes an optimal scheduling for ice slurry systems for energy cost saving. The optimization technique applied in the study is the dynamic programming method, for which the state variable is the storage in the ice storage tank and the control variable is the state of chiller's on-off switching. Though the costs during charge period is included in optimization by taking the average cost of ice per hour for slurry making, the time horizon for the simulation is limited building cooling period because accurate charge rate from the ice maker into the ice storage tank cannot be estimated during the charge period. In the operating simulation after optimizing procedure, energy consumption and operating cost for the optimal control are calculated and compared with them for a conventional control with one case of cooling load profile.

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A CHARGER/DISCHARGER FOR MODELING OF SERIAL/PARALLEL CONNECTED NI-MH BATTERY

  • Heo, Min-Ho;Ahn, Jae-Young;Kim, Kwang-Heon
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.554-559
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    • 1998
  • Equalizing the state of charge of cell that affects the charge/discharge quality and efficiency of the battery through the charge/discharge characteristic experiments of battery source, we develope the high efficiency charge/discharge system which would be used in serial HEV with the constant engine-generator output. For this, establishes the electrical model of Ni-MH battery appropriate to the high efficiency charge/discharge conditions. There is no model of Ni-MH cell, so we used Ni-Cd model and obtain the Ni-MH model through the experiment. A reason that each cell has the same charge/discharge property for applying the cell model to serial/parallel connected battery source extensively is needed. Therefore, in this paper, propose the Ni-MH charger/discharger has the equalization charging function and selectable cut-off function.

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Analysis of excess minority carrier and charge wish lifetimes in N-dirft region of NPT-IGBT (수명시간에 따른 NPT-IGBT의 N-drift 영역에서의 과잉소수 캐리어와 전하량 분석)

  • 류세환;이용국;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.844-847
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    • 2001
  • In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

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Improved Memory Characteristics by NH3 Post Annealing for ZrO2 Based Charge Trapping Nonvolatile Memory

  • Tang, Zhenjie;Zhao, Dongqiu;Li, Rong;Zhu, Xinhua
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.16-19
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    • 2014
  • Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

Energy Transfer Pathway in Luminescent Lanthanide Complexes Based on Dansyl-N-methylaminobenzoic Acid through Intramolecular Charge Transfer State for Near Infrared Emission

  • Roh, Soo-Gyun;Baek, Nam-Seob;Kim, Yong-Hee;Kim, Hwan-Kyu
    • Bulletin of the Korean Chemical Society
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    • v.28 no.8
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    • pp.1249-1255
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    • 2007
  • We have investigated the photophysical properties of dansyl-N-methylaminobenzoic acid (DABAH) as a ligand and its lanthanide (Ln3+)-cored complexes (Ln3+-(DABA)3(terpy)) in order to determine the main energy transfer pathway for sensitized near infrared emission of Ln3+ ions (Ln3+ = Nd3+ and Er3+) in Ln3+- (DABA)3(terpy). The fluorescence spectrum of DABAH shows a large Stokes shift with increasing solvent polarity. This large Stokes shift might be due to the formation of a twisted intramolecular charge transfer (TICT) state, as demonstrated by the large dipole moment in the excited state. It is in good agreement with the result that the phosphorescence even in the Gd3+-cored complex based on the DABAH ligand was not observed, maybe due to the highly forbidden character of the S1 → T1 transition in the DABAH ligand. A short decay component (ca. 1 ns) was observed in Er3+-(DABA)3(terpy) whereas the fluorescence lifetimes of DABAH and its Gd3+-(DABA)3(terpy) are observed about ~10 ns. The short component could be originated from the energy transfer process between the ligand and the Ln3+ ion. Based on the fluorescence of DABAH its Ln3+- (DABA)3(terpy), the sensitization of Ln3+ luminescence in the Ln3+-(DABA)3(terpy) takes place by the energy transfer via the TICT state of DABAH in the excited singlet state rather than via the excited triplet state.