• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.