• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• 한국결정성장학회지
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• 제1권1호
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• pp.66-73
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• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• 대한전자공학회논문지
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• 제25권7호
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• pp.767-773
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• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

• Applied Microscopy
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• 제27권3호
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.127.1-127.1
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• 2000

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Applied Microscopy
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• 제25권2호
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.

• 한국결정성장학회지
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• 제16권2호
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• pp.66-70
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• 2006

실리콘웨이퍼 표면에 기계적인 손상을 가한 후 산화 열처리 공정을 실시하면 온도와 기계적인 손상의 크기에 따라 여러 가지 결정 결함이 발생된다. 기계적인 손상이 크고 열처리 온도가 증가함에 따라 dislocation loop 등의 대형 결함들이 발생되고 열처리 온도가 낮거나 손상의 크기가 작을수록 OISF(Oxidation Induced Stacking Faults)등의 소형 결함들이 많이 발생된다. Minority carrier lifetime을 측정하여본 결과 결함의 크기가 작을수록 minority carrier lifetime이 높은 것으로 밝혀졌다. 더욱이 dislocation loop 등의 결정 결함보다는 결함 발생 이전 단계인 strained layer등이 금속불순물에 대한 gettering의 효과가 더욱 높음을 알 수 있었다.

• 열처리공학회지
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• 제9권2호
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• pp.112-120
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• 1996

The effects of ${\varepsilon}$ martensite content and strain amplitude on damping capacity of an Fe-17%Mn alloy have been studied to establish damping mechanism of Fe-Mn system corresponding to the magnitude of strain amplitude. In a range of $1{\times}10^{-4}{\sim}3{\times}10^{-4}$ strain amplitude, the damping capacity is linearly proportional to the ${\varepsilon}$ martensite content, which suggests that stacking faults and ${\varepsilon}$ martensite variant boundaries are the principal damping sources. In the range of $4{\times}10^{-4}{\sim}6{\times}10^{-4}$ strain amplitude, however, a maximum damping capacity is observed around 68 vol.% ${\varepsilon}$. This behavior is very similar to dependence of relative area of ${\gamma}/{\varepsilon}$ interface on ${\varepsilon}$ martensite content. This means that in this strain range, ${\gamma}/{\varepsilon}$ interface acts as damping source in addition to the stacking faults and variant boundaries in Fe-17%Mn alloy.

• 동력기계공학회지
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• 제11권1호
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• pp.115-120
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• 2007

The effect of grain size on the damping capacity of Fe-26Mn-2Al alloy studied in this paper has been investigated after changing the microstructure by cold rolling and changing grain size. Micro structures in Fe-26Mn-2Al at room temperature consist of a large quantity of austenite and a small quantity of ${\varepsilon}\;and\;{\alpha}'$ martensite. And ${\varepsilon}\;and\;{\alpha}'$ martensite was increased by increasing the degree of cold rolling. The content of deformation induced martensite was increased with increasing the degree of cold rolling. Damping capacity was linearly increased with increasing ${\varepsilon}$ martensite content, which suggests that stacking faults and ${\varepsilon}$ martensite variant boundaries are the principle damping sources. With increasing the grain size in Fe-26Mn-2Al alloy, the damping capacity was increased due to increasing the volume fraction of ${\varepsilon}$ martensite by decrement in stability of austenite phase. With decreasing the grain size, the content of deformation induced martensite was decreased and the damping capacity was decreased.