• Title/Summary/Keyword: Stable constant current

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The Position Sensorless Control of SRG using the Instantaneous Flux (순시자속을 이용한 위치센서 없는 SRG의 운전)

  • 김영조;오승보;김영석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.7 no.5
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    • pp.472-481
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    • 2002
  • In this paper, the instantaneous flux Is applied to control the position of the SRG (Switched Reluctance Generator) without position sensor. The position information of the rotor is required in the drive of SRG. These data are generally obtained by a shaft encoder or resolver. In some cases, the EMI(Electro Magnetic Interference), vibration, thermal, and humidity environments may cause the difficulties in maintaining the satisfactory performance for the position detection. Therefore, the elimination of the position and speed sensor is needed. In this paper, a new method for the position estimation of the SRG is proposed. The estimation of the flux is calculated by using the measured voltage and current. The rotor position gets from the flux profile. The output voltage is also controlled constantly by PR control algorithm. These methods are verified by computer simulations md experiments using DSP. Experimental results certificate that the proposed method is able to control the SRG stable, and keep the output voltage constant in spite of changing of the load.

Thermal Stability and Electrical Properties of $HfO_xN_y$ ($HfO_2$) Gate Dielectrics with TaN Gate Electrode (TaN 게이트 전극을 가진 $HfO_xN_y$ ($HfO_2$) 게이트 산화막의 열적 안정성)

  • Kim, Jeon-Ho;Choi, Kyu-Jeong;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Jin-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.54-57
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    • 2003
  • [ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

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Hydraulic and Upstream Migratory Experiments on Combined Fishway of Herring-bone Bottom Baffle Type and Brush Type (헤링본 조류판·브러시 겸용어도의 수리 및 어류 소상실험)

  • Lee, Hyeong Rae;Kim, Ki Heung
    • Journal of the Korean Society of Environmental Restoration Technology
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    • v.14 no.3
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    • pp.157-168
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    • 2011
  • In order to promote efficiency of upstream and downstream migration of fishes, this study has developed a combined fishway of herring-bone bottom baffle type and brush type fishways. The results obtained are as follows : 1. In a channel with constant incline, the velocity of current generally shows a distinct tendency of acceleration as it goes down the stream. But in the hydraulic experiment of herring-bone bottom baffle type fishway, the velocity reached its maximum only at 0.4m/sec, and it tended to be stable without any acceleration. 2. The velocity in the brush type fishway showed a distinct tendency of acceleration as the discharge increased. But its greatest velocity was only 0.3m/sec, and its velocity change according to the discharge increase was only 0.15m/sec at maximum. 3. The maximum velocity in the combined type fishway was less than half of the blast speed of the poorest swimmer, the juvenile eel with 90mm of body length. So any species of fishes are supposed to be able to migrate upstream from the estuary through this combined type fishway. 4. The field experiment of upstream migration showed that the combined type fishway can promote efficiency of upstream and downstream migration of any species of fishes.

Effect of pH in Sodium Periodate based Slurry on Ru CMP (Sodium Periodate 기반 Slurry의 pH 변화가 Ru CMP에 미치는 영향)

  • Kim, In-Kwon;Cho, Byung-Gwun;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.117-117
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    • 2008
  • In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

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Electroplating process for the chip component external electrode

  • Lee, Jun-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.1-2
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    • 2000
  • In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

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Energy-based numerical evaluation for seismic performance of a high-rise steel building

  • Zhang, H.D.;Wang, Y.F.
    • Steel and Composite Structures
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    • v.13 no.6
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    • pp.501-519
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    • 2012
  • As an alternative to current conventional force-based assessment methods, the energy-based seismic performance of a code-designed 20-storey high-rise steel building is evaluated in this paper. Using 3D nonlinear dynamic time-history method with consideration of additional material damping effect, the influences of different restoring force models and P-${\Delta}/{\delta}$ effects on energy components are investigated. By combining equivalent viscous damping and hysteretic damping ratios of the structure subjected to strong ground motions, a new damping model, which is amplitude-dependent, is discussed in detail. According to the analytical results, all energy components are affected to various extents by P-${\Delta}/{\delta}$ effects and a difference of less than 10% is observed; the energy values of the structure without consideration of P-${\Delta}/{\delta}$ effects are larger, while the restoring force models have a minor effect on seismic input energy with a difference of less than 5%, but they have a certain effect on both viscous damping energy and hysteretic energy with a difference of about 5~15%. The paper shows that the use of the hysteretic energy at its ultimate state as a seismic design parameter has more advantages than seismic input energy since it presents a more stable value. The total damping ratio of a structure consists of viscous damping ratio and hysteretic damping ratio and it is found that the equivalent viscous damping ratio is a constant for the structure, while the equivalent hysteretic damping ratio approximately increases linearly with structural response in elasto-plastic stage.

Solubility and Stability of Melatonin in Propylene glycol and 2-hydroxypropyl-${\beta}$-cyclodextrin vehicles

  • Lee, Beom-Jin;Choi, Han-Gon;Kim, Chong-Kook;Parrott, Keith-A.;Ayres, James-W.;Sack, Robert-L.
    • Archives of Pharmacal Research
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    • v.20 no.6
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    • pp.560-565
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    • 1997
  • The physicochemical properties of melatonin (MT) in propylene glycol (PG) and 2-hydroxypropyl-.betha.-cyclodextrin $(2-HP{\beta}CD)$ vehicles were characterized. MT was endothermally decomposed as determined by differential scanning calorimetry (DSC). Melting point and heat of fusion obtained were $116.9{\pm}0.24^{\circ}C $.and $7249{\pm}217 cal/mol$., respectively. MT as received from a manufacture was very pure, at least 99.9%. The solubility of MT in PG solution increased slowly until reaching 40% PG and then steeply increased. Solubility of MT increased linearly as concentration of $2-HP{\beta}CD$ without PG INCREASED$(R^2=0.993)$. MT solubility in the mixtures of pg and $2-HP{\beta}CD$ also increased linearly but was less than the sum of its solubility in $2-HP{\beta}CD$ and PG individually. The MT solubility was low in water, simulated gastric or intestinal fluid but the highest in the mixture of PG(40v/v%) and $2-HP{\beta}CD$ (30w/v%) although efficiency of MT solubilization in $2-HP{\beta}CD$ decreased as the concentration of PG increased. MT was degraded in a fashion of the first order kinetics $(r^2>0.90)$. MT was unstable in strong acidic solution (HCl-NaCl buffer, pH 1.4) but relatively stable in other pH values of 4-10 at $70^{\circ}C$. In HCl-NaCl buffer, MT in 10% PG was more quickly degraded and then slowed dpwm at a higher concentration. However, the degradation rate constant of MT in 2-HP.betha.CD was not changed significantly when compared to the water. The current studies can be applied to the dosage formulations for the purpose of enhancing percutaneous absorption or bioavailability of MT.

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Fabrication of the Wafer Level Packaged LED Integrated Temperature Sensor and Configuration of The Compensation System for The LED's Optical Properties (온도센서가 집적된 WLP LED의 제작과 이를 통한 광 특성 보상 시스템의 구현)

  • Kang, In-Ku;Kim, Jin-Kwan;Lee, Hee-Chul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.7
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    • pp.1-9
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    • 2012
  • In this paper, resistance temperature detector (RTD) integrated into the LED package is proposed in order to solve the temperature dependence of LED's optical properties. To measure the package temperature in real time, the RTD type temperature sensor having excellent accuracy and linearity between temperature change and resistance change was adopted. A stable metallic film is required for long term reliability and stability of the RTD type temperature sensor. Therefore, deposition and annealing condition for the film were determined. Based on the determined condition, the RTD type temperature sensor with the sensitivity of about $1.560{\Omega}/^{\circ}C$ was fabricated inside the LED package. In order to configurate the LED package system keeping the constant brightness regardless of the temperature, additional conversion circuit and control circuit boards were fabricated and added to the fabricated LED package. The proposed system was designed to compensate the light intensity caused by temperature change using the variable duty rate of driving current. As a result, the duty rate of PWM signal which is the output signal of the configurated system was changed with the temperature change, and the duty rate was similarly varied with the target duty rate. Consequently, it was focused the fabricated RTD can be used for compensating the optical properties of LED and the LED package which exhibits constant brightness regardless of the temperature change.

Surface reaction of $HfO_2$ etched in inductively coupled $BCl_3$ plasma ($BCl_3$ 유도결합 플라즈마를 이용하여 식각된 $HfO_2$ 박막의 표면 반응 연구)

  • Kim, Dong-Pyo;Um, Doo-Seunng;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.477-477
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    • 2008
  • For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

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The Transition of Production, Consumption and Price of Non-ferrous Metals (비철금속(非鐵金屬)의 생산(生産), 소비(消費), 시세(時勢)의 추이(推移))

  • Moon, W.J.
    • Economic and Environmental Geology
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    • v.2 no.3
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    • pp.1-25
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    • 1969
  • In considering the mining industry, it is necessary to study the production, consumption and price of ore and metals in every country of the world in order to determine the trend of the industry in the present and for the future. This study is necessary especially for exporting domestically produced are which is in excess of domestic consumption and for importing are, or metal where local production does not meet domestic demand. It will be treated of Au, Ag, Cu, Pb, Zn, W, Mo, which are the most important non-ferrous metals, and which greatly affect the mining industry of Korea. The presentation will concern itself only with the free world. About 1, 200 ton of gold are produced annually with little fluctiation in recent years. Most of the gold produced is consumed by advanced countries for industrial uses as well as for producing precious objects. The U.S.A. expends yearly about four times its domestic production and Japan about three times its domestic production for industry and arts. Because of the instability of the currency of the U.S.A., England and France, recently, the price of gold has been $ 41-42 per ounce, whereas the official price is $35.00 per ounce. It will be expected that the official price will be raised in the near future. As for silver, about 6,500 tons are produced annually with no special fluctuation change in recent years. However, the annual consumption is about 14,000 ton, so the supply and demand is extremely unbalanced. The shortage is made up by the sale of the U.S. treasury's reserve stock and the reclaiminig of silver from coins and other scrap. As the Treasury'S reserves will be exhausted in a year or two, the price of silver which is $1. 64 per ounce, will go up drastically in about a year. As for copper, 5,257,000 ton's were mined in 1966. It's production is being increased about 5% annually. However, consumption exceeds production by about 100,000 ton a year. The recent Foreign refinery copper price in the U.S.A is $ 60 per pound. The supply of copper being insufficient to meet international demands, the price will go up and with no prospect of being lowered in the near future even with the slight annual increase in production. About 2,100,000 to 2,200,000 tons of lead are produced annually. Consumption exceeds production by about 50,000-60,000 tons annually. The current price of lead in New York is $ 155 per pound. As the supply of lead is internationally stable, It will be believed that there will be no significant change in its price in the near future. In 1967, 3,926,000 tons of Zinc were produced. There is annual increase of 4-7% in production. The annual consumption exceeds production by 100,000 to 200,000 tons. The current zinc price in the St. Louis market inthe U.S.A. is $ 145 per pound. Even though its supply is stable and sufficient world wide, the consumption rate will increase at a faster pace than before; hence, the price will slowly go up. Tungsten mines yield about 11,000 tons a year. Its production has been relatively constant in the past few years. The amount of its consumption increases slowly world wide, but in the free world· there has been a slight annual decrease. However, since Red China has not been exporting their tungsten to other countries for several months, the price on the London market of S.T.U. of $Wo_3$ has increased to $ 44~46. Should Red China begin to export actively again the price will drop to $ 40~42. In 1967, 56,000 tons of Molybdenum were produced. Production exceeds consumption by 200,000 -30,000 tons annually. The current price in the U.S.A. is $ 1.72 per Mo pound. Since the rate of production in the U.S.A. is on the increase with large amounts of ore reserve, the price of molubdenum should not go up.

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