• Title/Summary/Keyword: Stability threshold

검색결과 245건 처리시간 0.029초

Bayesian Inversion of Gravity and Resistivity Data: Detection of Lava Tunnel

  • Kwon, Byung-Doo;Oh, Seok-Hoon
    • 한국지구과학회지
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    • 제23권1호
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    • pp.15-29
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    • 2002
  • Bayesian inversion for gravity and resistivity data was performed to investigate the cavity structure appearing as a lava tunnel in Cheju Island, Korea. Dipole-dipole DC resistivity data were proposed for a prior information of gravity data and we applied the geostatistical techniques such as kriging and simulation algorithms to provide a prior model information and covariance matrix in data domain. The inverted resistivity section gave the indicator variogram modeling for each threshold and it provided spatial uncertainty to give a prior PDF by sequential indicator simulations. We also presented a more objective way to make data covariance matrix that reflects the state of the achieved field data by geostatistical technique, cross-validation. Then Gaussian approximation was adopted for the inference of characteristics of the marginal distributions of model parameters and Broyden update for simple calculation of sensitivity matrix and SVD was applied. Generally cavity investigation by geophysical exploration is difficult and success is hard to be achieved. However, this exotic multiple interpretations showed remarkable improvement and stability for interpretation when compared to data-fit alone results, and suggested the possibility of diverse application for Bayesian inversion in geophysical inverse problem.

IZO 박막 트랜지스터의 UV를 이용한 후열처리 조사 시간에 따른 전기적 특성 평가 (Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time)

  • 이재윤;김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제33권2호
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    • pp.93-98
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    • 2020
  • We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

A New Islanding Detection Method Based on Feature Recognition Technology

  • Zheng, Xinxin;Xiao, Lan;Qin, Wenwen;Zhang, Qing
    • Journal of Power Electronics
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    • 제16권2호
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    • pp.760-768
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    • 2016
  • Three-phase grid-connected inverters are widely applied in the fields of new energy power generation, electric vehicles and so on. Islanding detection is necessary to ensure the stability and safety of such systems. In this paper, feature recognition technology is applied and a novel islanding detection method is proposed. It can identify the features of inverter systems. The theoretical values of these features are defined as codebooks. The difference between the actual value of a feature and the codebook is defined as the quantizing distortion. When islanding happens, the sum of the quantizing distortions exceeds the threshold value. Thus, islanding can be detected. The non-detection zone can be avoided by choosing reasonable features. To accelerate the speed of detection and to avoid miscalculation, an active islanding detection method based on feature recognition technology is given. Compared to the active frequency or phase drift methods, the proposed active method can reduce the distortion of grid-current when the inverter works normally. The principles of the islanding detection method based on the feature recognition technology and the improved active method are both analyzed in detail. An 18 kVA DSP-based three-phase inverter with the SVPWM control strategy has been established and tested. Simulation and experimental results verify the theoretical analysis.

Glycosylsucrose의 이화학적 특성 (Physical and Chemical Properties of Glycosylsucrose)

  • 설혜미;지옥화;김미리
    • 한국식품조리과학회지
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    • 제7권4호
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    • pp.51-61
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    • 1991
  • Physical and chemical properties of glycosylsucrose were characterized as follows: 1. The moisture content of glycosylsucrose syrup (35% , w/w) was 63.6% and total sugar in solid was 35.9%. 2. Main sugar compositions of glycosylsucrose syrup were maltotetraose 54.5%, sucrose 18.0%, glycosylsucrose 15.3%, maltosylsucrose 11.3% and the content of glucose, maltose, maltotriose and fructose were very little. 3. Perceived sweetness threshold of glycosylsucrose was 0.71%, relative sweetness was 0.53, and sweetness intensity expressed as power function was S=$0.78^{\circ}$C^{1.5}$$. 4. Viscosity of glycosylsucrose was higher than that of sucrose and Japanese product at 10, 25, 35 and $65^{\circ}C$. 5. The content of water absorption of gylcosylsucrose at Aw 0.80 was 0.48 g $H_2$O/g dry weight while that of sucrose was 0.17g $H_2$O/g dryweight at Aw 0.86. 6. The stability of glycosylsucrose was decreased by acidic pH, high temperature and long heating time. 7. The glycosylsucrose showed very little browning when heated with pepton, but alkaline pH (pH8), high temperature and long heating time increased browning reaction.

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Rainfall induced instability of mechanically stabilized earth embankments

  • Roy, Debasis;Chiranjeevi, K.;Singh, Raghvendra;Baidya, Dilip K.
    • Geomechanics and Engineering
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    • 제1권3호
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    • pp.193-204
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    • 2009
  • A 10.4-m high highway embankment retained behind mechanically stabilized earth (MSE) walls is under construction in the northeastern part of the Indian state of Bihar. The structure is constructed with compacted, micaceous, grey, silty sand, reinforced with polyester (PET) geogrids, and faced with reinforced cement concrete fascia panels. The connections between the fascia panels and the geogrids failed on several occasions during the monsoon seasons of 2007 and 2008 following episodes of heavy rainfall, when the embankment was still under construction. However, during these incidents the MSE embankment itself remained by and large stable and the collateral damages were minimal. The observational data during these incidents presented an opportunity to develop and calibrate a simple procedure for estimating rainfall induced pore water pressure development within MSE embankments constructed with backfill materials that do not allow unimpeded seepage. A simple analytical finite element model was developed for the purpose. The modeling results were found to agree with the observational and meteorological records from the site. These results also indicated that the threshold rainwater infiltration flux needed for the development of pore water pressure within an MSE embankment is a monotonically increasing function of the hydraulic conductivity of backfill. Specifically for the MSE embankment upon which this study is based, the analytical results indicated that the instabilities could have been avoided by having in place a chimney drain immediately behind the fascia panels.

Channel Protection Layer Effect on the Performance of Oxide TFTs

  • KoPark, Sang-Hee;Cho, Doo-Hee;Hwang, Chi-Sun;Yang, Shin-Hyuk;Ryu, Min-Ki;Byun, Chun-Won;Yoon, Sung-Min;Cheong, Woo-Seok;Cho, Kyoung-Ik;Jeon, Jae-Hong
    • ETRI Journal
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    • 제31권6호
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    • pp.653-659
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    • 2009
  • We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

Advances in Zinc Oxide-Based Devices for Active Matrix Displays

  • Mann, Mark;Li, Flora;Kiani, Ahmed;Paul, Debjani;Flewitt, Andrew;Milne, William;Dutson, James;Wakeham, Steve J.;Thwaites, Mike
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.389-392
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    • 2009
  • Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

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High-performance thin-film transistor with a novel metal oxide channel layer

  • Son, Dae-Ho;Kim, Dae-Hwan;Kim, Jung-Hye;Sung, Shi-Joon;Jung, Eun-Ae;Kang, Jin-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.222-222
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    • 2010
  • Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

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A Study on Rainfall Induced Slope Failures: Implications for Various Steep Slope Inclinations

  • Do, Xuan Khanh;Jung, Kwansue;Lee, Giha;Regmi, Ram Krishna
    • 한국지반환경공학회 논문집
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    • 제17권5호
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    • pp.5-16
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    • 2016
  • A rainfall induced slope failure is a common natural hazard in mountainous areas worldwide. Sudden and rapid failures which have a high possibility of occurrence in a steep slope are always the most dangerous due to their suddenness and high velocities. Based on a series of experiments this study aimed to determine a critical angle which could be considered as an approximate threshold for a sudden failure. The experiments were performed using 0.42 mm mean grain size sand in a 200 cm long, 60 cm wide and 50 cm deep rectangular flume. A numerical model was created by integrating a 2D seepage flow model and a 2D slope stability analysis model to predict the failure surface and the time of occurrence. The results showed that, the failure mode for the entire material will be sudden for slopes greater than $67^{\circ}$; in contrast the failure mode becomes retrogressive. There is no clear link between the degree of saturation and the mode of failure. The simulation results in considering matric suction showed good matching with the results obtained from experiment. A subsequent discarding of the matric suction effect in calculating safety factors will result in a deeper predicted failure surface and an incorrect predicted time of occurrence.

열적 stress에 의한 폴리이미드 표면에서의 TN-LCD의 잔류DC 특성 (Residual DC characteristic on Twisted Nematic Liquid Display on the Polyimide Surface by the Thermal Stress)

  • 배유한;황정연;김종환;문현찬;한정민;김영환;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.498-501
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    • 2004
  • In this study, the threshold voltage and the response time of thermal stressed TN-LCDs showed the same performances on no thermal stressed TN-LCDs. There was little change of value in TN cells. Also, the transmittances of TN-LCDs on the rubbed PI surface were almost same while increasing thermal stress time. However, the thermal stability of TN cell was decreased by the high thermal stress for the long duration. Residual DC was decreased as the thermal stress increases. Especially, when TN cell was stressed more and more by heating, residual DC was changed a lot. As a result, the residual DC property of LCD in projection TV is affected very much by heating.

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