References
- A. N. Hanna, A. M. Hussain, H. Omran, S. Alsharif, K. N. Salama, and M. M. Hussain, IEEE Electron Device Lett., 37, 193 (2016). [DOI: https://doi.org/10.1109/LED.2015.2505613]
- M. Mizukami, S. I. Cho, K. Watanabe, M. Abiko, Y. Suzuri, S. Tokito, and J. Kido, IEEE Electron Device Lett., 39, 39 (2018). [DOI: https://doi.org/10.1109/LED.2017.2776296]
- K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett., 85, 1993 (2004). [DOI: https://doi.org/10.1063/1.1788897]
- E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). [DOI: https://doi.org/10.1063/1.3387819]
- M. Mizukami, S. Oku, S. I. Cho, M. Tatetus, M. Abiko, M. Mamada, T. Sakanoue, Y. Suzuri, J. Kido, and S. Tokito, IEEE Electron Device Lett., 36, 841 (2015). [DOI: https://doi.org/10.1109/LED.2015.2443184]
- M. R. Niazi, R. Li, E. Q. Li, A. R. Kirmani, M. Abdelsamie, Q. Wang, W. Pan, M. M. Payne, J. E. Anthony, D. M. Smilgies, S. T. Thoroddsen, E. P. Giannelis, and A. Amassian, Nat. Commun., 6, 8598 (2015). [DOI: https://doi.org/10.1038/ncomms9598]
- E. Chong, Y. S. Chun, and S. Y. Lee, Electrochem. Solid- State Lett., 14, H96 (2011). [DOI: https://doi.org/10.1149/1.3518518]
- E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006). [DOI: https://doi.org/10.1016/j.tsf.2005.07.311]
- B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Films, 516, 1382 (2008). [DOI: https://doi.org/10.1016/j.tsf.2007.03.072]
- B. Zhang, H. Li, X. Zhang, Y. Luo, Q. Wang, and A. Song, Appl. Phys. Lett., 106, 093506 (2015). [DOI: https://doi.org/10.1063/1.4914296]
- C. G. Choi, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett., 11, H7 (2008). [DOI: https://doi.org/10.1149/1.2800562]
- S. J. Seo, Y. H. Hwang, and B. S. Bae, Electrochem. Solid-State Lett., 13, H357 (2010). [DOI: https://doi.org/10.1149/1.3474606]
- W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett., 87, 193503 (2005). [DOI: https://doi.org/10.1063/1.2120895]
- C. Y. Koo, K. Song, T. Jun, D. Kim, Y. Jeong, S. H. Kim, J. Ha, and J. Moon, J. Electrochem. Soc., 157, J111 (2010). [DOI: https://doi.org/10.1149/1.3298886]
- Y. J. Tak, D. H. Yoon, S. Yoon, U. H. Choi, M. M. Sabri, B. D. Ahn, and H. J. Kim, ACS Appl. Mater. Interfaces, 6, 6399 (2014). [DOI: https://doi.org/10.1021/am405818x]
- K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, and J. K. Jeong, Appl. Phys. Lett., 98, 103509 (2011). [DOI: https://doi.org/10.1063/1.3564882]
- J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and S. I. Kim, Appl. Phys. Lett., 90, 262106 (2007). [DOI: https://doi.org/10.1063/1.2753107]
- Z. Yuan, X. Zhu, X. Wang, X. Cai, B. Zhang, D. Qiu, and H. Wu, Thin Solid Films, 519, 3254 (2011). [DOI: https://doi.org/10.1016/j.tsf.2010.12.022]
- K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Nat. Mater., 10, 45 (2011). [DOI: https://doi.org/10.1038/nmat2914]
- G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato, Thin Solid Films, 515, 8562 (2007). [DOI: https://doi.org/10.1016/j.tsf.2007.03.126]
- S. F. Tseng, W. T. Hsiao, D. Chiang, K. C. Huang, and C. P. Chou, Appl. Surf. Sci., 257, 7204 (2011). [DOI: https://doi.org/10.1016/j.apsusc.2011.03.091]
- C. Huang, M. Wang, Z. Deng, Y. Cao, Q. Liu, Z. Huang, Y. Liu, W. Guo, and Q. Huang, J. Mater. Sci.: Mater. Electron., 21, 1221 (2010). [DOI: https://doi.org/10.1007/s10854-009-0050-x]
- A. Chen, Q. Su, H. Han, E. Enriquez, and Q. Jia, Adv. Mater., 31, 1803241 (2018). [DOI: https://doi.org/10.1002/adma.201803241]
- B. Stegemann, K. M. Gad, P. Balamou, D. Sixtensson, D. Vossing, M. Kasemann, and H. Angermann, Appl. Surf. Sci., 395, 78 (2017). [DOI: https://doi.org/10.1016/j.apsusc.2016.06.090]
- J. S. Park, J. H. Yang, T. Barnes, and S. H. Wei, Appl. Phys. Lett., 109, 042105 (2016). [DOI: https://doi.org/10.1063/1.4959848]