References
- S. W. Yoo, H. Kim, M. Kang, and H. Shin, J. Semicond. Technol. Sci., 16, 204 (2016). [DOI: https://doi.org/10.5573/JSTS.2016.16.2.204]
- H. Jiang, N. Xu, B. Chen, L. Zeng, Y. He, G. Du, X. Liu, and X. Zhan, Semicond. Sci. Technol., 29, 115021 (2014). [DOI: https://doi.org/10.1088/0268-1242/29/11/115021]
- E. Bury, B. Kaczer, P. Roussel, R. Ritzenthaler, K. Raleva, D. Vasileska, and G. Groeseneken, Proc. 2014 IEEE International Reliability Physics Symposium (IEEE, Waikoloa, USA, 2014) p. 14. [DOI: https://doi.org/10.1109/IRPS.2014.6861186]
- T. Takashi, T. Matsuki, T. Shinada, Y. Inoue, and K. Uchida, IEEE J. Electron Devices Soc., 4, 365 (2016). [DOI: https://doi.org/10.1109/JEDS.2016.2568261]
- M. I. Khan, A. R. Buzdar, and F. Lin, Proc. 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (IEEE, Guilin, China, 2014) p. 7021443. [DOI: https://doi.org/10.1109/ICSICT.2014.7021443]
- B. Gonzalez, J. B. Roldan, B. Iniguez, A. Lazaro, and A. Cerdeira, Microelectron. J., 46, 320 (2015). [DOI: https://doi.org/10.1016/j.mejo.2015.02.003]
- S. Venkateswarlu, A. Sudarsanan, S. G. Singh, and K. Nayak, IEEE Trans. Electron Devices, 65, 2721 [DOI: https://doi.org/10.1109/TED.2018.2834979]
- E. R. Hsieh, M. R Jiang, J. L. Lin, S. S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, and O. Cheng, IEEE J. Electron Devices Soc., 6, 866 (2018). [DOI: https://doi.org/10.1109/JEDS.2018.2859276]
- F. Stellari, K. A. Jenkins, A. J. Weger, B. Linder, and P. Song, Proc. 2015 IEEE International Reliability Physics Symposium (IEEE, Monterey, USA 2015). [DOI: https://doi.org/10.1109/IRPS.2015.7112672]
- I. Hossain, A. Anwar, M. Z. Baten, and Q.D.M. Khosru, Proc. International Conference on Electrical & Computer Engineering (ICECE 2010) (IEEE, Dhaka, Bangladesh, 2010) p. 400. [DOI: https://doi.org/10.1109/icelce.2010.5700713]
- K. Derbyshire, Will Self-Heating Stop FinFETs, https://semiengineering.com/will-self-heating-stop-finfets/ (2017).
- J. U. Lee, D. Yoon, H. Kim, S. W. Lee, and H. Cheong, Phys. Rev. B, 83, 081419 (2011). [DOI: https://doi.org/10.1103/PhysRevB.83.081419]
- US Patent: Z. Krivokapic and B. Sahu, FinFET Device with a Graphene Gate Electrode and Method of Forming Same, 2014/OO15O15 A1, (2014).
- X. Wu, V. Varshney, J. Lee, Y. Pang, A. K. Roy, and T. Luo, Chem. Phys. Lett., 669, 233 (2017). [DOI: https://doi.org/10.1016/j.cplett.2016.12.054]
- T. S. Pan, M. Gao, Z. L. Huang, Y. Zhang, X. Feng, and Y. Lin, Nanoscale, 7, 13561 (2015). [DOI: https://doi.org/10.1039/c5nr02750k]
- A. L. Moore and L. Shi, Mater. Today, 17, 163 (2014). [DOI:https://doi.org/10.1016/j.mattod.2014.04.003]