• 한국결정성장학회지
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• 제22권2호
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• pp.78-83
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• 2012

$La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3-{\delta}}$(LSMCu)에서 Sr 함량에 따른 구조적 변화와 전기전도도에 대해 연구, 고찰하였다. EDTA citric complexing process(ECCP)로 페로브스카이트 구조를 갖는 $La_{0.8}Sr_{0.2}MnO_3$(LSM)와 $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$($0.1{\leq}x{\leq}0.4$)을 제조하였다. Sr 함량이 증가할수록 격자상수와 격자부피는 감소하는 경향을 나타내었으며, 이는 Sr 함량이 증가함에 따라 B-site에서 증가하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 영향인 것으로 판단하였다. $0.1{\leq}x{\leq}0.3$ 범위의 조성에서 Sr 함량이 증가할수록 $500{\sim}1000^{\circ}C$에서 측정된 전기전도도는 증가하였고, x = 0.3 조성에서는 $750^{\circ}C$와 $950^{\circ}C$에서 각각 172.6 S/cm와 177.7 S/cm (최고값)를 나타내었다. 반면, x = 0.4 조성에서는 전기전도도가 감소하였는데 이는 입계에 발생한 산화물에 의한 영향으로 판단하였다. Sr 함량이 증가함에 따라 B-site에 존재하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 증가로 인해 격자수축이 발생하고, hopping mechanism에 관여하는 charge carrier들이 늘어나 전기전도도가 증가한 것으로 판단하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
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• pp.143-147
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• 2000

• 한국결정성장학회지
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• 제13권4호
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• pp.172-175
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• 2003

We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• 한국재료학회지
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• 제5권5호
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.32-32
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• 2005

• 한국초전도ㆍ저온공학회논문지
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• 제20권3호
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• pp.1-4
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• 2018

The effect of sulfate substitution on the formation of (Pb,S)-1201 type phase was investigated. Polycrystalline samples with nominal compositions of $(Pb_{0.5}B_{0.5-x}S_x)(Sr_{2-y}La_y)CuO_z$, (x = 0 - 0.5, y = 0.7 - 1.0) and $(Pb_{0.5}S_{0.5})(Sr_{2-y}La_y)CuO_z$ (y = 0.5 - 1.0) were prepared by using a solid-state reaction method. The samples were characterized by powder X-ray diffraction (XRD) and resistivity measurements. XRD data revealed that almost-single (Pb,S)-1201 phase samples could be obtained for x = 0.5 and y = 0.9-1.0, judging from the similar results of the XRD patterns between the (Pb,S)-1201 and (Pb,B)-1201 phases. Each of the samples has a crystal structure with tetragonal symmetry. The sample with x = 0.5 and y = 0.9 is found to show an onset of resistivity dropping at over 23 K and zero resistivity at 12 K.

• 전기학회논문지
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• 제59권1호
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• pp.120-122
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• 2010

In this paper the effect of constituent content on superconductivity and phase in BiPbSrCaCuO system was reported. The zero resistance temperature reaches as high as 100k when dophant Sb was decreased dramatically with increasing Sb content in BiPbSrCaCuO system while the corresponding phase was changed fundamentally.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.349-358
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• 2000

Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.