• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.162-167
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• 2003

To find the concentration according to the depth-direction of ions implanted in the sample, with sputtering of the sample surface, one needs the depth profiling of ion implanted in the sample. On measuring of depth profiling, the sputtering rate to affect depth direction, is calculated by SRIM simulation. When ion is implanted in the sample, the atomic density of the sample rises up a little, and it alters sputtering yield. This alteration then causes differences of sputtering rate to affect depth-direction, on measuring of depth profiling. With the usage of SRIM Monte Carlo simulation code, one calculates sputtering rate, with sputtering yield by the alteration of atomic density of the sample through ion implantation. As a result, it goes to prove that its difference affects depth distribution, on measuring of depth profiling.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.179.1-179.1
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• 2013

Cylindrical Rotating Magnetron Sputtering Cathode (이하 Rotary Cathode)는 기존에 사용 되던 rectangular type 보다 Target 사용 효율이 높다는 큰 이점을 가지고 있다. 높은 Target 사용 효율은 비용 절감 효과와 직접적으로 관련 된다. 이번 연구는 3D Plasma simulation(PIC-MCC)을 통한 Target 사용 효율 80% 이상의 Rotary Cathode 개발을 목적으로 한다. Plasma simulation에 External Magnetic fields를 접목하여 Electron의 이동 궤적을 제어하였고, 생성된 Ion (Ar+)의 밀도 및 속도로 Plasma의 안정성과 Erosion 계산 구간을 선정 하였다. Target Erosion Profile은 Sputtering yield Data와 Target에 충돌한 Ion 정보를 사용하여 산출 하였으며, Sputtered Particles의 Deposition Profile은 계산된 Target Erosion Profile과 The cosine law of emission을 이용하여 계산 하였다. 실험 조건은 Plasma simulation의 초기조건 바탕으로 하여 2G size의 ITO Target을 대상으로 실험 하였다. 비 Erosion 영역 최소화하기 위해 Magnet Length를 변경하여 제작 적용 하였다. Simulation 계산 시간의 제약으로 인하여 simulation에서 생성된 최대 이온 밀도는 일반적으로 알려진 값 보다 적게 계산 되었지만, Simulation으로 예측한 Erosion Profile 및 Deposition Profile은 실험 값과 유사한 형태를 나타났으며, 실험 결과는 Target 사용 효율 80%이상의 결과를 보였다.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.245-251
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• 2005

A high performance dual rocking magnet sputtering gun has been developed. The rocking magnet sputtering gun introduces full-face erosion by rapidly rocking the magnet in the region where the high plasma density is maintained. The newly developed dual rocking magnet sputtering gun whose target utilization was 77 percent achieved high performance in quality in the view of target utilization and target life-time comparing to the existing magnetron sputtering gun. The PIC-MCC target erosion simulation has been performed simultaneously. Comparing experimental target erosion profiles with simulated target erosion profiles, the simulation could estimate the tendency of the target erosion profiles but could not estimate an exact target erosion profile. If the simulation were improved more precisely, the cost reduction for the development of the multiple rocking magnet sputtering gun would be expected.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1287-1299
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• 2023

A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.76-81
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• 2006

Molecular dynamics simulations were carried out to investigate physical sputtering of Fe(100) substrate due to energetic ion bombardments. Repulsive interatomic potentials at short internuclear distances were determined with ab initio calculations using the density functional theory. Bohr potentials were fitted to the ab initio results on diatomic pairs (Ar-Fe, Fe-Fe) and used as repulsive screened Coulombic potentials in sputtering simulations. The fitted-Bohr potentials improve the accuracy of the sputtering yields predicted by molecular dynamics for sputtering of Fe(100), whereas Moliere and ZBL potentials were found to be too repulsive and gave relatively high sputtering yields. In spite of assumptions and limitations in this simulation work, the sputtering yields predicted by the molecular dynamics method were in fairly good accordance with the obtainable experimental data in absolute values as well as in manner of the variation according to the Incident energy. Threshold energy for sputtering of Fe(100) substrate was found to be about 40 eV. Additionally, distributions of kinetic energies of sputtered atoms and their original depths could be obtained.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.19-22
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.26-29
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.