• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.33-36
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• 1996

AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio. The AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. The crystallinity of the films, which were grown respectively under the different conditions, were determined by the comparison of the band width of an E$_1$[TO:680$cm^{-1}$ /] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.% according to the increment of the $N_2$/Ar ratio by which the sputter yield got lower.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Journal of Magnetics
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• v.11 no.3
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• pp.103-107
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• 2006

In grain oriented electrical steel process, hot band annealing has thought to be essential for obtaining good magnetic properties. New hot rolling method of heavy reduction in early hot rolling stage was applied to obtain good magnetic properties in GO process without hot band annealing. Hot rolling was carried out by varyinghot rolling reduction distribution along hot rolling pass. The heavy hot rolling reduction in rear stand improves the magnetic flux density in the case of no hot band annealing. The hot band specimens of the heavy reduction in front stand shows the elongated hot deformed microstructures in the center layer and strong {001}<110> texture.On the contrary, the heavily reduced specimens in rear stand shows the recrystallization in the center layer of hot band and strong {111}<112> and {110}<001> textures.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.86-87
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• 2003

TiO$_2$ 박막은 높은 유전율과 우수한 화학적 안전성, 가시광선 영역에서 우수한 투과성 및 높은 굴절률을 가지고 있어 광범위한 분야에 중요한 물질로써 사용되어져 왔다. 일반적으로 TiO$_2$는 rutile, anatase, brookite의 세 가지 결정형태를 가진다. 이런 TiO$_2$ 박막을 제작하기 위해 sputtering, e-beam evaporation, sol-gel method, chemical vapor deposition(CVD) 등과 같은 물리적, 화학적인 방법이 이용되고 있다. 이러한 제조방법들 중에서 스퍼터링 방법은 박막을 형성하는 이온들의 이온에너지를 높여주어 덩어리에 가까운 성질을 가지기 때문에 조밀한 박막을 제작하는데 이용되며, 박막의 대면적 코팅과 표면 경도가 우수한 박막을 제작할 수 있는 장점을 가지고 있다. (중략)

• Journal of Magnetics
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• v.6 no.4
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.739-745
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• 1998

The objective of this paper is to provide experimental data of Er(rare- earth)doped $SiO_2$thin film made by sputtering methods. The deposition rate of silica glass by sputtering method was 55$\AA$/min. In EDD measurements, the average Er concentration in the deposited film was 0.77(wt%). After annealing at $900^{\circ}C$, the Cl concentration decreased from 3.79(wt%) to 1.52(wt%). The refractive indices of the core $n_1$, cladding $n_2$ were 1.458, 1.558 respectively at 632.8 nm. The refractive index difference between core and cladding, $\Delta$n was 0.1. The refractive index profile of core and cladding interface shows step profile. In the study, $SiO_2$ glass films of Si wafer were successfully doped with active erbium. Therefore, this experimental data will be applicable for fabrications of Er doped planar integrated optical device.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.69-70
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• 2006

The ITO thin films were prepared by Facing Targets Sputtering(FTS) method on polyethersulfon(PES) substrate. The ITO thin films were deposited with the film thickness of 100nm at room temperature and working gas pressure of 1 mTorr. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin films was deposited was with a resistivity $8.3{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80% in the visible range.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.73-78
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• 2004

AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480［㎧］and 5040［㎧］respectively.