Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.33-36
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- 1996
The characterization of AlN thin films grown on GaAs(100) substrate
GaAs(100) 기판위에 성장된 AIN 박막의 특성
Abstract
AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the
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