• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.403-406
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• 2012

Effect of thickness on ZnO properties including the compositional ratio and crystallinity has been systematically investigated using a variety of characterization tools of x-ray diffraction, field emission scanning electron microscopy, x-ray fluorescence and x-ray photoelectron spectroscopy. Interestingly, it was observed that ZnO films below 80 nm in thickness were in oxygen deficiency, while the oxygen ratio was increased in the films above the thickness, although the compositional ratio of ZnO film was not linearly varied with increasing film thickness. Also, ZnO crystallinity, which is characterized by (002) diffraction pattern, was clearly improved with increasing film thickness. The properties of ZnO film with different sputtering time and the nature of direct current reactive sputtering process were discussed in terms of compositional ratio, especially oxygen ratio in ZnO film.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.89-92
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• 2007

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.86-90
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• 2008

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.566-569
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• 2001

In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.620-623
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• 2004

In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.247-247
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• 2008

In this work, VOx thin films have been deposited by DC magnetron sputtering method on glass substrate using argon and oxygen gases. We examined the effects of the post annealing temperature on the structural, optical, and electrical variations of VOx films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using RTA equipment in air ambient. The thickness of the film and interface between film and substrate were observed by field emission scanning electron microscopy (FESEM). To analysis the structural properties of VOx with various annealng temperatures, we used XRD method. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.