• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1485-1487
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• 2000

A variety of target configurations in sputtering process have been proposed to deposit various structures of thin film alloys and compound films. In this study, we presented the comparative experimental results regarding to the characterization of properties of Cu-Ni thin films deposited by using a magnetron co-sputtering method, as a function of target configurations; one is using a single target with varying the area of Ni chips attached on the Cu target and another is using a dual-type target with two targets of Ni and Cu separated each other. Structural(d-spacing, crystal orientation, crystallite size, cross-sectional morphology) and electrical(resistivity) properties of deposited films are characterized and compared as a function of target configurations as well as deposition conditions.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.12
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• pp.1280-1289
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• 1991

The setting up and the characteristics of the reactive magnetron sputtering process are described and TiN thin film deposited by this system is studied in this paper. We have studied characteristics of the discharge voltage-current, electron temperature and density. With the variation of discharge current and magnetic field, partial pressure of NS12T that changed from Ti to TiN sputtering region has been investigated with experimental method. We have analyzed the physical characteristics of TiN thin film obtained under the various conditions in this sputtering process with SEM photo-analysis and X-ray diffraction pattern of these samples.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.216-220
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• 2001

Piezoelectric ZnO thin films by Facing Targets Sputtering(FTS) method were deposited on slide glass. The Facing Targets Sputtering system can deposit thin film at plasma-free condition and change the deposition condition in wide range. The characteristics of ZnO thin films changed with power, working pressure and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step(Tencor) and SEM(Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable for the preparation of high quality ZnO thin films with good c-axis orientation.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.7-10
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• 2000

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.108-111
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• 2000

Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.185-188
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• 2000

Crystal orientation of Ni$_{18}$ $Fe_{19}$ thin films prepared by facing targets sputtering system was investigated. FTS system can deposit a high quality thin film and control deposition conditions in wide range. T he crystallographic characteristics of Ni$_{18}$ $Fe_{19}$ thin films on variation of thickness and substrate tempera ture was investigated by XRD and AFM. As a result, we obtained Ni$_{18}$ $Fe_{19}$ thin films prepared at subst rate temperature room temperature, thickness 160nm and over revealed good crystal orientation to [111] direction.irection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.444-445
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• 2006

We prepared ZnO:Al thin films under various sputtering conditions by using facing targets sputtering (FTS) method. ZnO:Al thin films were deposited on polyethersulfon (PES) substrate which is the thickness of 200um at room temperature. the electrical, optical and crystallographic properties of ZnO:Al were investigated. From the results, prepared alll ZnO:Al thin films showed (002) diffraction peaks. ZnO:Al thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$ and a transmittance of over 80% in visible range was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.