Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Solid Phase Crystallizations of Sputtered and Chemical Vapor Deposited Amorphous Hydrogenated Silicon (a-Si:H) Thin Film

스퍼터링 및 화학기상 증착 비정질 수소화 실리콘박막의 고상결정화

  • 김형택 (인천대학교 공대 재료공학과)
  • Published : 1998.04.01
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Abstract

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

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References

  1. Electron Letters v.15 Amorphous Silicon Field Effect Device and Possible Application P. G. Le Comber;W.E. Spear;A.Ghaith
  2. SID '94 Digest A Very Small Ploy-Si TFT-LCD for HDTV Projectors T. Yamashita;T. Matsumoto;Shimada;Y. Akebi;M. Kubo;K. Fujioka
  3. SID'94 Digest 1.3-in. Full-Color VGA Poly-Si TFT-LCDs with Completely Integrated Drivers M. Matsuo;T. Hashizume;S. Inoue;M. Miyasaka;S. Takenaka;H. Ohshima
  4. Appl. Phys. Lett. v.65 Polycrystalline Silicon Thin Film Transistors Deposited at Low Substrate Temperature by Remote Plasma Chemical Vapor Deposition Using SiF₄/H₂ J.I. Woo;H.J. Ihm;J. Jang
  5. 한국재료학회지 v.5 no.2 Characteristics of Low-Temperature Polysilicon Thin Film Transistors Y.H. Kim
  6. SID'94 Digest Advances in Liquid Crystals for TFT Displays R. Tarao;H. Saito;S. Sawada;Y. Goto
  7. Electrochemical Society Fall Meeting, Oct. Characteristics of TFTs Fabricated from Polycrystalline UHV/CVD Si and Ge-Si Films T.Y. Ma;M. Racanelli;D.W. Greve
  8. 대한전자공학회논문지 v.28 no.2 Fabrication and Characteristics of Low Temperature Polycrystal Silicon Thin Film Transistors for Displays T.Y. Ma;K.C. Park;S.H. Kim
  9. Japan Display '92 Future of Amorphous Si TFTs and Their Fabrication Technologies N. Ibaraki
  10. Jpn J. Appl. Phys. v.28 no.4 Polycrystalline Silicon Film Formation at Low Temperature Using a Microcrystalline Silicon Film K. Nakazawa;K. Tanaka;N. Yamauchi
  11. J. Appl. Phys. v.65 no.5 Crystallized Si Films by Low-Temperature Rapid Thermal Annealing of Amorphous Silicon R. Kakkad;J. Smith;W.S. Lau;S.J. Fonash
  12. 1st TFT LCD international workshop SNU, Jan. Metal Induced Lateral Crystallization of Amorphous Silicon Films S.K. Joo;S.W. Lee
  13. Korean Appl. Phys. v.7 no.1 RF전력과 수소희석이 RP-CVD에 의한 저온 다결정 실리콘의 특성에 미치는 영향 김성기;박규창;황명학;장진
  14. 한국재료학회지 v.6 no.4 기계적 damage 활성화효과에 대한 수소화 및 비수소화 비정질규소박막의 고상결정화 거동 김형택;김영관