Study on Discharge Characteristics and TiN Thin Film by Magnetron Process

반응성 마그네트론 프로세서의 방전특성 및 질화티타늄 박막형성에 관한 연구

  • 김광화 (전기연구소 고전력연구실) ;
  • 조연옥 (전기연구소 고전력연구실) ;
  • 조영순 (부산대 공대 전기공학과) ;
  • 조정수 (부산대 공대 전기공학과) ;
  • 박정후 (부산대 공대 전기공학과)
  • Published : 1991.12.01

Abstract

The setting up and the characteristics of the reactive magnetron sputtering process are described and TiN thin film deposited by this system is studied in this paper. We have studied characteristics of the discharge voltage-current, electron temperature and density. With the variation of discharge current and magnetic field, partial pressure of NS12T that changed from Ti to TiN sputtering region has been investigated with experimental method. We have analyzed the physical characteristics of TiN thin film obtained under the various conditions in this sputtering process with SEM photo-analysis and X-ray diffraction pattern of these samples.

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