• Title/Summary/Keyword: Sputtering method

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CVD를 이용한 산화아연 (ZnO) 나노구조 형성 및 특성평가

  • Kim, Jae-Su;Jo, Byeong-Gu;Lee, Gwang-Jae;Park, Dong-U;Kim, Hyeon-Jun;Kim, Jin-Su;Kim, Yong-Hwan;Min, Gyeong-In;Jeong, Hyeon;Jeong, Mun-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.179-179
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    • 2010
  • 1차원 나노구조를 갖는 ZnO를 성장하기 위해 Laser ablation, Chemical vapor deposition (CVD), Chemical transport method, Molecular beam epitaxy, Sputtering 등의 다양한 형성법들이 이용되어지고 있다. 특히 대량생산과 경제성 측면에서 많은 장점을 가지고 있는 CVD를 이용한 ZnO 성장 및 응용 연구가 활발하게 수행되고 있다. 본 연구에서는 Thermal CVD를 이용하여 반응물질과 기판 사이의 거리, 기판온도, $O_2$/Zn 비율 등의 성장변수를 변화시켜 ZnO 나노구조를 성장하고 구조 및 광학적 특성을 연구하였다. Scanning electron microscope를 통한 구조 특성평가 결과 반응물질과 기판 사이의 거리가 13 cm 이하의 조건에서 ZnO 나노구조들은 나노판(Nanosheet)과 나노선(Nanowire)이 혼재하여 성장된 것을 보였다. 그리고 반응물질과 기판사이의 거리가 15 cm 이상부터 나노판이 없어지고 수직한 ZnO 나노막대(Nanorod)가 형성되었다. 상온 Photoluminescence 스펙트럼에서 반응물질과 기판사이의 거리가 5에서 15 cm로 증가할수록 결함 (Defect)에 의해 발생된 515 nm 파장의 최대세기 (Maximum intensity)가 10배 이상 감소한 반면, ZnO 나노구조에 의한 378 nm 파장의 NBE발광 (Near band edge emission)은 8배 이상 증가하였다. 이러한 구조 및 광학적 결과로부터, 질서 없이 성장된 것보다 수직 성장된 ZnO 나노구조의 결정질(Crystal quality)이 좋은 것을 확인하였다. 이를 바탕으로 성장변수에 따른 ZnO 나노구조의 형성 메커니즘을 Zn와 O 원자의 성장거동을 기반으로 한 모델을 이용하여 해석하였다.

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Granular Thin Film of Titanium Dioxide for Hydrogen Gas Sensor (입상의 이산화티타늄 박막을 이용한 수소센서)

  • Song, Hye-Jin;Oh, Dong-Hoon;Jung, Jin-Yeun;Nguyen, Duc Hoa;Cho, You-Suk;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.19 no.6
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    • pp.325-329
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    • 2009
  • Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

A surface resistance effect on the fabrication of Dye-sensitized Solar Cell with various widths (셀 폭에 따른 염료 감응형 태양전지의 표면저항 효과)

  • Choi, Jin-Young;Kim, Yong-Cheol;Park, Sung-Jun;Sung, Youl-Moon;Kim, Whi-Young;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.187-191
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    • 2006
  • Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide $(TiO_2)$ films on the FTO $(SnO_2: F)$ substrate for dye-sensitized solar cells (DSCs). Anatase structure $TiO_2$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_2(5%)$ mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma (ICP) with $Ar/O_2$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSCs. We have chosen a solar cell width as a variable of a large-scaled DSCs and confirmed electric characteristics of an individual cell. As a result, the higher the internal resistance of DSC becomes, the wider the width gets. Internal resistance makes it difficult to collect photoelectron generated from dye. Ultimately up sizing DSC causes the increase of internal resistance and then has a bad effect on the cell characteristics.

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Exchange Coupling in CoZr/Ag/CoCr Trilayered Films (CoZr/Ag/CoCr 삼층박막의 교환결합)

  • 백종성;박용성;임우영;이수형;김종오
    • Journal of the Korean Magnetics Society
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    • v.8 no.6
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    • pp.357-361
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    • 1998
  • For CoZr/Ag/CoCr trilayered films deposited by DC and FR magnetron sputtering method, ferromagentic resonance experiments have been used to investigate the dependence of the exchange coupling between CoZr and CoCr layers separated by Ag layer on the thickness of the Ag layer. The coupling strength K increases with increasing Ag thickness up to 10 $\AA$ with a maximum value of 748 Oe, but oscillates with increasing Ag thickness in the range from 20 to 100 $\AA$. The coupling strength is positive for all samples. Hence, it seems that the exchange coupling between CoZr and CoCr layers separated by Ag layer is ferromagnetic.

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The Magnetic Properties of Co-Ni-Fe-N Soft Magnetic Thin Films

  • Kim, Y. M.;Park, D.;Kim, K. H.;Kim, J.;S. H. Han;Kim, H. J.
    • Journal of Magnetics
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    • v.5 no.4
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    • pp.120-123
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    • 2000
  • Co-Ni-Fe-N thin films were fabricated by a $N_2$ reactive rf magnetron sputtering method. The nitrogen partial pressure ($P_{N2}$) was varied in the range 0~10% . As$P_{N2}$ increases in this range, the saturation magnetization $B_s$ linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increases from 27 to 155 $\mu\Omegacm$. The coercivity $H_c$ exhibits the minimum value at 4% $P_{N2}$. The magnetic anisotropy fields ($H_k$) are in the range of 20$\sim$50 Oe. High frequency characteristics of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films are excellent in the range of 3$\sim$5% of $P_{N2}$. In particular, the effective permeability of the film fabricated at 4% $P_{N2}$ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, $H_c$/ of 1.4 Oe, resistivity of 98$\mu\Omegacm$ and $H_k$ of about 25 Oe. Also, the corrosion resistance of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films was imp roved with increasing N concentration.

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Figure of merit and bending characteristics of Mn-SnO2/Ag/Mn-SnO2 tri-layer film (Mn-SnO2/Ag/Mn-SnO2 3중 다층막의 성능지수와 밴딩 특성)

  • Cho, Youngsoo;Jang, Guneik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.4
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    • pp.190-195
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    • 2021
  • Typical Mn-SnO2/Ag/Mn-SnO2 tri-layer films were prepared on a PET substrate by RF/DC magnetron sputtering method at room temperature. Based on EMP simulation, the thicknesses of the top and bottom Mn-doped SnO2 layers were kept at 40 nm and the Ag layer was maintained at 13 nm for continuous electrical conduction. The experimentally measured optical transmittances at 550 nm wavelength were ranged from 82.9 to 88.1 % and sheet resistances were varied from 5.9 to 6.9 Ω/☐. The highest value of figure of merit, ϕTC was 48.1 × 10-3 Ω-1. Based on bending test under 4 and 5 mm of inner and outer curvature radius condition, tri-layer film resistance varies only by approximately 1.5 % after 10,000 bending cycles, showing excellent mechanical flexibility.

Corrosion resistance at high temperature condition of Cr Films Formed on hot-dip Al-Si plated steel sheet (용융Al-Si도금 강재에 형성한 Cr 막의 고온 환경 중 내식특성)

  • Gang, Min-Ju;Lee, Seung-Hyo;Lee, Myeong-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.55 no.6
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    • pp.448-459
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    • 2022
  • Generally, steel is the most commonly used in the industry because of good strength, processability and cost-effectiveness. Steel can be surface-treated such as coating or used as an alloy by adding elements such as Cr, Ni, Zr, and Al to increase corrosion resistance. However, even if steel is used in same environment corrosion resistance is sharply lowered when it is exposed to a high temperature for a fixed or extended period of time due to an overload or other factors. In particular, the use of hot-dip aluminized plated steel, which is used in high-temperature atmospheres, is increasing due to the surface Al2O3 oxide film. This steel necessitates an urgent solution as issues of corrosion resistance limitations often appear. It is an important issue that not only cause analysis but also the research for the surface treatment method that can be solved. Thus, in this study, Cr in which it is expected to be effective in corrosion resistance and heat resistance attempted to deposit on hot dip aluminized plated steel with PVD sputtering. And it was possible to present the surface treatment application of various types of industrial equipment exposed to high temperature and basic design guidelines for use by confirming the corrosion resistance of hot dip Al-Si plated steel with Cr film deposited at high temperature.

A Reduction Process of Palladium Oxide Thin Films and Hydrogen Gas Sensing Properties of Reduced Palladium Thin Films (PdO 박막의 환원과 환원된 Pd박막의 수소 감지 특성)

  • Lee, Young Tack;Kim, Yeon Ju;Lee, Jun Min;Joe, Jin Hyoun;Lee, Wooyoung
    • Korean Journal of Metals and Materials
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    • v.48 no.4
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    • pp.347-352
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    • 2010
  • This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and $O_2$ ambient conditions using a reactive de magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90%. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed on the deoxidized PdO thin films are known to play a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.

Texture Development of CeO2 Buffer Layer and its Effect on Superconducting MOD-YBCO Films (CeO2 완충층의 결정성장 특성 및 금속 유기물 증착법으로 제조된 초전도 YBCO층에 미치는 영향)

  • Chung, Kook Chae;Kim, Y.K.;Wang, X.L.;Dou, S.X.
    • Korean Journal of Metals and Materials
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    • v.47 no.10
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    • pp.681-685
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    • 2009
  • $CeO_2$ buffer layers have been deposited on YSZ single crystal substrates via a radio-frequency sputtering method. We focused on the texture development of $CeO_2$ with out-of-plane alignment and its effects on a superconducting YBCO layer, which was deposited by metal organic deposition. $CeO_2$ layers were grown epitaxially on single crystal YSZ substrates and subsequent YBCO layers were also grown epitaxially from $CeO_2$ layers. It was observed that the intensity of $CeO_2$(200) decreased with deposition temperature. ${\theta}-2{\theta}$ scan FWHM values of $CeO_2$(200) were inversely proportional to the peak intensities of $CeO_2$(200). The sample with the lowest $CeO_2$(200) intensity and poor out-of-plane alignment showed a strong reaction with the MOD-YBCO layer resulting in a thicker $BaCeO_3$ layer. The texture and superconducting property of the YBCO layer were affected indirectly by the formation of a $BaCeO_3$ layer at the interface between the $CeO_2$ and YBCO layers.

THE MAGNETIC PROPERTIES OF Co-Ni-Fe-N SOFT MAGNETIC THIN FILMS

  • Kim, Y. M.;Park, D.;Kim, K. H.;Kim, J.;S. H. Han;Kim, H. J.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.492-499
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    • 2000
  • Co-Ni-Fe-N thin films were fabricated by a N$\sub$2/ reactive rf magnetron sputtering method. The nitrogen partial pressure (P$\sub$N2/) was varied in the range of 0∼10%. As P$\sub$N2/ increases in this range, the saturation magnetization (B$\sub$s/) linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increased from 27 to 155 ${\mu}$$\Omega$cm. The coercivity (H$\sub$c/) exhibits the minimum value at 4% of P$\sub$N2/. The magnetic anisotropy (H$\sub$k/) are in the range of 20∼50 Oe. High frequency characteristics of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ films are excellent in the range of 3∼5% of P$\sub$N2/. Especially the effective permeability of the film fabricated at 4% of P$\sub$N2/ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, H$\sub$c/ of 1.4 Oe, resistivity of 98 $\Omega$cm and H$\sub$k/ of about 25 Oe. Also, the corrosion resistance of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ were improved with the increase in N concentration.

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