• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.694-697
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• 2015

We investigated the characterizations of carbon films fabricated by dual magnetron sputtering under various RF powers for the improvement of physical properties in carbon fiber (CF). All sputtered carbon films exhibited amorphous structure, regardless of RF powers, resulting in uniform and smooth surfaces. The hardness and elastic modulus are increased with the increase of RF power, and the adhesion and friction properties of carbon films were improved with the increase of RF power. In the results, The increase of RF power in the sputtering method improved tribological properties of the carbon films, and these attributes can be expected to improve the physical properties of the carbon fiber reinforcement plastics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.22-25
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• 1995

In this paper, the physical characteristics of piezoelectric transducer which generates acoustic weve at microwave frequency were theoretically analized. We found that increasing electrode thickness is showed large distorthion on bandwidth. ZnO thin film were desposited by RF magnetron sputtering method. considering the sputtering parameters. Thickness of the desposited ZnO was 3.9 $\mu\textrm{m}$. In this experiment, we get that resistivity is 12.196${\times}$109 [cm$\Omega$], that resonance frequency is 827.47MHz Measuring insertion loss, we ascertained to possibility of transducer application for microwave frequency.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1481-1482
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• 2011

현재 고온 및 부식 침식 환경에 사용되는 재료는 부품의 내구성 및 신뢰성이 수명에 절대적인 영향을 준다. 따라서 내열성, 내식성의 문제를 해결하기 위한 재료의 개발과 함께 표면특성 향상을 위한 코팅기술이 지속적으로 발전되고 있다. 본 연구에서는 전기접점재료의 중요한 특성인 저항 고온 고강도 고내식의 특성을 가지는 차세대 복합소재로써 Mo-Cu를 Magnetron Sputtering 법을 이용하여 박막을 제조하였다. Sputtering 변수로는 파워, 온도, Gas, 공정시간, 조성으로 정하였고 변수에 따른 박막의 특성을 분석하였다. 분석으로는 내열, 내식, 경도, XRD, SEM, EDX, EPMA, 면저항을 측정 하여 조건별 비교 분석하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.83-84
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• 2009

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.67-70
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• 1999

We have fabricated YBa$_2Cu_3O_{7-x}$ thin films by cylindrical hollow cathode sputtering. For 2 inch diameter of MgO (100) substrate, we obtained the zero resistance temperature in the range from 83 K to 86 K and thickness uniformity better than 5 % over the whole area. Also, the average deposition rate was 100nm/h which is higher than 10 times compare to conventional off-axis sputtering method. These results indicate that cylindrical hollow cathode sputtering seems to have unique capabilities for high rate and homogeneous deposition of large area thin film.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.