• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.842-845
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• 2002

We report on the properties of ITO thin films prepared by dc and pulse magnetron sputtering at low temperature. The electrical, optical, and surface properties of the films prepared by dc and pulse magnetron sputtering were compared. We discuss the role the pulse power plays in determining ITO thin film properties that are important in flat panel applications.

• Proceedings of the KAIS Fall Conference
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• 2009.05a
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• pp.810-812
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• 2009

반도체 소자공정에서 균일한 두께의 금속박막을 증착하는 것은 매우 중요하다. sputtering 방법의 경우, 증착조건을 조절하기 쉽고, 특히 대형 기판을 사용하여 제조할 경우 박막의 두께 등 박막 특성의 균일화를 기하는데 용이한 장점을 가지고 있다. 하지만, 기존의 기판고정식 sputtering 장비로 증착한 Al 박막은 증착 시에 가해지는 전력의 크기에 따라 그 특성의 변화를 생긴다. 이런 전력의 크기에 따른 Al 박막의 reflectance, sheet resistance 그리고 uniformity 등을 분석하여 Al 박막의 우수한 증착 조건을 알 수 있었다.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.183-186
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• 1996

BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.97-101
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• 1995

We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.4
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• pp.293-297
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• 2020

This paper tried to find the best conditions that could be applied to solar cells by deposition of CdS thin film on ITO glass using multiplex displacement sputter system. RF power was changed to 50W, 100W, and 150W and sputtering time was set to 10 minutes. As a result of the measurement of transmittance, the average transmittance in the area of 400 to 800 nm was measured from 60% to 80% and the best characteristic was measured at 150W at 84%. The band gap was also measured at 3.762eV at 50W, 4.037eV at 100W and 4.052eV at 150W. In XRD analysis, even as RF power was increased, it was observed as a structure called Wurtzite (hexagonal) of CdS. And as RF power increased, the particles were large and uniformly deposited, but at 100W the particles were densely composed and dense. And the thickness measurement showed that the RF power increased uniformly.