• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.154-159
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• 2005

Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.307-310
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• 2009

In order to develop SOFC cell performance, many kind of things were investigated. Electrode microstructure is the one of them therefore we focus on electrodes fabrication easily and efficiently. We can fabricate electrodes easily with Pt using DC magnetron sputtering and sintering. However sputtering is difficult to handle and to grow porous electrodes what we require. On the other hand sintering is much easier than sputtering to make porous and adhesive electrodes. So in this paper we deal with sintering and optimize to deposit electrodes conditions by analyzing electrode microstructure with sacnning electron microscopy(SEM) micrograph. Also, we compare electrochemical performance of cells fabricated by sputtering and sintering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.997-1000
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• 2001

Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.694-698
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• 2002

Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.119-126
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• 1996

The effect of the $O_2$ concentration in the sputtering gas mixture, substate temperature and Ar pressure on the structural and optical properties of 3 mol% YSZ and 8 mol% YSZ thin films deposited by RF magnetron sputtering were investigated . The films were observed to have various crystal structures with different compositions in accordance with the type of the target materials. The size of fine grain-like particles decreased wiht increasing the $O_2$ concentration in the sputtering gas in the case of 3mol% YSZ, while it increased in the case of 8 mol% YSZ . However, the average opticla transmission of 8mol% YSZ, despite of thicker thickness. was higher than that of 3 mol% YSZ. Furthermore, the values of refractive index of 3mol% YSZ increased with increasing the $O_2$ concentration in the sputtering gas on the contrary to those of the 8 mol% YSZ. However, the transmission spectra of 8 mol% YSZ films were not strongly influenced by the substrate temperature and Ar pressure, whereas the refractive index of the YSZ films were strongly affected by the sputtering parameters.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.13-26
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• 2016

Nanoparticles (NPs), which have been investigated intensively as electrocatalysts, are usually synthesized by chemical methods that allow precise size and shape control. However, it is difficult to control the components and compositions of alloy NPs. On the other hand, the conventional physical method, sputtering with solid substrates, allows for facile composition control but size control is difficult. Recently, “liquid medium sputtering” has been suggested as an alternative method that is capable of combining the advantages of the chemical and conventional physical methods. In this review, we will discuss NP synthesis via the liquid medium sputtering technique using ionic liquid and low-volatile polymer media. In addition, potential applications of the technique, including the generation of oxygen reduction reaction electrocatalysts, will be discussed.