• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.524-531
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• 2001

Micro-HPLC/IS/MS after solid phase extraction has been employed to enhance the accu-racy in the determination of toxic microcystins, such as microcystin-LR, -YR and -RR. The absorbance at 238 nm in HPLC/UV and characteristic spectra of 135 m/z and $[M+H]^+$ m/z in MS have been widely monitored to identify those microcystin-LR, -YR and -RR. In this study, new lines at 507 m/z for LR, 520 m/z for RR and 532 m/z for YR have been additionally detected in the micro-HPLC/IS/MS spectrum, corresponding to double charge. The micro-HPLC/IS/MS methodology has been applied to investigate the presence of the toxic microcystins in Taecheong lake.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• Journal of Surface Science and Engineering
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• v.51 no.1
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• pp.47-53
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• 2018

Sn-based lithium-ion batteries have low cost and high theoretical specific capacity. However, one of major problem is the capacity fading caused by volume expansion during lithiation/delithiation. In this study, 3-dimensional foam structure of Cu-Sn alloy is prepared by co-electrodeposition including large free space to accommodate the volume expansion of Sn. The Cu-Sn foam structure exhibits highly porous and numerous small grains. The result of EDX mapping and XPS spectrum analysis confirm that Cu-Sn foam consists of $SnO_2$ with a small quantity of CuO. The Cu-Sn foam structure electrode shows high reversible redox peaks in cyclic voltammograms. The galvanostatic cell cycling performances show that Cu-Sn foam electrode has high specific capacity of 687 mAh/g at a current rate of 50 mA/g. Through SEM observation after the charge/discharge processes, the morphology of Cu-Sn foam structure is mostly maintained despite large volume expansion during the repeated lithiation/delithiation reactions.

• Korean Journal of Crystallography
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• v.14 no.1
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• pp.16-23
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• 2003

The electronic structure and chemical bonding of β-MnO₂ were theoretically investigated by DV-X/sub α/ (the discrete variation X/sub α/) method. which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The calculations on several cluster models having different sizes were carried out for the determination of a model suited for analyzing bulk state. The Mn/sub 15/O/sub 56/ model was selected as a sufficiently suitable model for the calculation of electronic state and chemical bonding by the comparison of the calculated XPS (X-ray photo-electron spectrum) and experimentally measured XPS. By using this model, the electron energy level, the density of state, the bond overlap population, the charge density distribution, and the net ionic transfer between cations and anions were calculated and discussed.

• Journal of Powder Materials
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• v.25 no.5
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• pp.375-378
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• 2018

Conductive and dielectric SiC are fabricated using electroless plating of Ni-Fe films on SiC chopped fibers to obtain lightweight and high-strength microwave absorbers. The electroless plating of Ni-Fe films is achieved using a two-step process of surface sensitizing and metal plating. The complex permeability and permittivity are measured for the composite specimens with the metalized SiC chopped fibers dispersed in a silicone rubber matrix. The original non-coated SiC fibers exhibit considerable dielectric losses. The complex permeability spectrum does not change significantly with the Ni-Fe coating. Moreover, dielectric constant is sensitively increased with Ni-Fe coating, owing to the increase of the space charge polarization. The improvements in absorption capability (lower reflection loss and small matching thickness) are evident with Ni-Fe coating on SiC fibers. For the composite SiC fibers coated with Ni-Fe thin films, a -35 dB reflection loss is predicted at 7.6 GHz with a matching thickness of 4 mm.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.593-599
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• 1990

A series of new, square planar, and mixed-ligand complexes of Ni(Ⅱ), Pd(Ⅱ), and Pt(Ⅱ) have been prepared. From the observation of electronic spectrum for the variation of the ligand substituents, the very intense absorption band in the visible range is by the electronic transition of dithiolene to diimine ligand, HOMO to LUMO. In the various solvent systems the IT band shows the similar behavior to IT transition of mixed-valence dinuclear complexes followed with Hush theory, happens rto dominently by the inner sphere charge transfer transition. The negative solvatochromism represents that the excited-state electric dipole is reduced or reversed by the electronic transition.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.50-54
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• 1999

We have measured the x-ray photoemission spectroscopy of cation deficient La0.970Mn0.970O3 as a function of temperature. Detailed results on the chemical shifts and changes in Mn 2p and Lp 3d core levels due to variation of temperature have been obtained. The Mn 2p 3/2 and 1/2 main peaks and La 3d core spectrum shift to lower binding energy levels with increasing temperature. This XPS behavior is correlated with the strength of localization of Mn3+. The Jahn-Teller effect due to Mn3+ besides the conventional random potential effects is likely to localize charge carriers in La-.970Mn0.970O3.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.1
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• pp.157-164
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• 2008

Partial discharge were simulated by conductive particle which could be easy accumulated charge and concentrated electric field in the model GIS. Radiated electromagnetic waves were measured and analyzed by using spectrum analyzer and antenna ($30{\sim}2000[MHz]$) for measurement of EMI EMC in accordance with occurrence and propagation of partial discharge. This paper suggested the other method of detecting and estimating of partial discharge for insulation diagnosis of GIS being conductive particle by measurement and analysis of radiated electromagnetic waves. From results of this study, it was confirmed that if the suggested method should be used for the diagnosis of insulation in the model GIS being conductive particle, detecting partial discharge and estimating discharge propagation will be possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.