• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• Archives of Pharmacal Research
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• v.15 no.1
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• pp.20-29
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• 1992

Effects of squalene on cellular and non-specific immune responses and antitumor activity in mice were investigated. Cellular and non-specific immunological assay parameters adopted in the present study were delayed-type hypersensitivity reaction and resette forming cells (RFC) for cellular immunity, activities of natural killer (NK) cells and phagocyte for non-specific immunity. Squalene resulted in marked increases of cellular and non-specific immune functions and enhancement of host resistance to tumor challenge in dose-dependent manner.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• Journal of Advanced Marine Engineering and Technology
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• v.15 no.1
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• pp.51-58
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• 1991

Corrosion fatigue test was performed by the use of plane bending fatigue tester in marine environment having various specific resistance from 25(natural sea water) to 5000.ohm.cm. It is in order to investigate the effects of marine environmental factor on the corrosion fatigue fracture of SS41 steel. The main results obtained are as follows; 1. The aspect ratio(b/a) of corner crack growing in natural sea water is lower than that in air. 2. The surface crack growth rate(da/dN) in marine environment is faster than that in air and da/dN delaies with the specific resistance increased. 3. The experimental constant m of paris rule [da/dN=C(${\delta}$K)$^m$] decrease with the specific resistance decreased and the effect of corrosion in proportion to the specific resistance is more sensitive than that of stress intensity factor range(${\delta}$K) under region II. 4. The accelerative factor(${\alpha}$) in marine environment is about 1.1-2.7 and .alpha. is increase under the low region of stress intensity factor range(${\delta}$K). 5. The electrode potential($E_0$) gets less noble potential with the specific resistance decreased.

• Magazine of the Korean Society of Agricultural Engineers
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• v.12 no.3
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• pp.2035-2042
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• 1970

Korean Janggi and Western plow to have developed for a long time in the east and west were tested and compared in their draft resistance. The charaderistic of Korean Janggi and plow to be able to make deep plowing, on of the most important factors influeneed the increased yield, were ofserved. The study was undertaken to obtain these basic factors' to device and construct the deep plowing Janggi. The results were as follow; 1. The draft resistance of Korean Janggi far less than that of plow and on the dry field, the influence of soil moisture contant to the draft resistance was larger in the Korean Janggi than in the western plow, but on the rice paddy, there was not differences between them. 2. The plow was more stable than that of Janggi in their operation. 3. The relation ship between the specific draft resistance and plowing depth was shown bygthe carved equation. $$K=Ax+\frac{B}{x}+C$$(K ; specific draft restance, x; plowing depth) A, B, C; Constant controled by soil and instrument factor) 4. Minimam values of the specific draft resistance were as follow; a. On the dry field; Korean Janggi; x = $8{\sim}14cm$ $4K=280{\sim}330gr/cm^2$$ Westean plow; x=$10{\sim}12cm$ $$K=480{\sim}490gr/cm^2$$ 6. On the rice paddy; Korean Janggi; x=$8{\sim}12cm$ $$K=255{\sim}280gr/cm^2$ Western plow; x=$7{\sim}10cm$ $$K=415{\sim}420grc/m^2$$

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.363-367
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• 2015

This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.673-681
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• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.176-184
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• 1996

To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.22-27
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• 2008

Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.