• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.69-69
• /
• 2011

태양열 발전 플랜트에 사용되는 중고온 범위의 축열조에 고체-액체간 상변화를 수행하는 용융염을 축열물질로 사용하면 액체상 또는 고체상만으로 된 열저장 매체에 비해 축열조의 규모를 축소함과 동시에 축열온도의 균일성 향상에 기여할 수 있다. 중온인 $250{\sim}400^{\circ}C$ 범위에서 이용 가능한 용융염으로는 질산칼륨($KNO_3$), 질산리튬($LiNO_3$)등이 있다. 그러나 이러한 용융염의 가장 큰 단점은 열전도율이 매우 낮다는 것이며, 이로 인해 요구되는 열전달률을 성취하기 위해서는 많은 열접촉면적이 필요하다는 것이다. 이러한 단점을 극복하는 방법을 도입하지 않고서는 축열시스템의 소규화를 성취하는데 큰 효과를 가져올 수 없다. 한편 열수송 성능이 탁월한 히트파이프를 사용하면 열원 및 열침과 축열물질 사이의 열전달 효율을 증가시켜 시스템의 성능 향상과 동시에 소규모화에 기여할 수 있다. 중온 범위 히트파이프의 작동유체로서 다우섬-A(Dowtherm-A)는 $150^{\circ}C$이상 $400^{\circ}C$까지의 범위에서 소수에 불과한 선택적 대안 중 하나이다. 따라서 본 연구에서는 용융염을 사용하는 중온 태양열축열조에 적용 가능한 다우섬-A 히트파이프의 성능을 파악하여 기술적 자료를 제시하고자 하였다. 열원으로는 고온 고압의 과열증기, 그리고 열침으로는 중온의 포화증기를 고려하였다. 용융염 축열조를 수직으로 관통하는 히트파이프는 하단부에서 열원 증기와 열교환 가능하며, 중앙부에서 축열물질과 열교환하고, 상단부에서는 중온 증기와 접촉할 수 있도록 배치하였다. 축열모드에서는 히트파이프의 하단부가 증발부로 작동하고, 중앙부가 응축부로 작동하여 용융염으로 열을 방출하면 용융염의 온도가 상승하고 용융점에 도달하면 액상으로의 상변화가 진행되면서 축열이 활성화된다. 축열모드에서 히트파이프의 상단부는 단열부로 작동한다. 방열과정에서는 히트파이프의 하단부가 단열된 상태이고, 중앙부는 용융염으로부터 열을 받아 증발부로 작동하며, 상단부는 중온 증기로 열을 방출하므로 응축부로 작동한다. 즉, 축열시스템의 작동모드에 따라 하나의 히트파이프에서 증발부, 응축부, 단열부의 위치가 변하게 된다. 특히, 히트파이프의 중앙 부분이 응축부에서 증발부로 전환될 때에도 작동이 보장되려면 내부 작동유체의 연속적인 재순환이 가능해야 하므로, 일반 히트파이프에서와는 달리 초기 작동액체의 충전량을 증발부 전체의 체적보다 더 많이 과충전해야 한다. 이러한 히트파이프의 성능 파악을 위한 실험에서 고려한 변수들은 열부하, 작동액체의 충전률, 작동온도 등이며, 열수송 성능의 지표로서는 유효열전도율과 열저항을 이용하였다. 중온범위에서 적정한 작동온도를 성취하기 위해 실험에서는 전압 조절기로 열부하를 조절하는 동시에 항온조로 응축부의 냉각수 입구 온도를 제어하였다. 하나의 히트파이프에 대해서 최대 1 kW까지의 열부하에서 냉각수 입구 온도를 $40^{\circ}C$에서 $80^{\circ}C$ 범위로 변화시키면 히트파이프 작동온도를 약 $250^{\circ}C$ 내외로 조절 가능하였다. 히트파이프 작동액체 충전률은 윅구조물의 공극 체적을 기준으로 372%에서 420%까지 변화 시켰다. 실험 결과를 토대로 열저항과 유효 열전도율을 각각 입력 열유속, 작동온도, 작동액체 충전률 등의 함수로 제시했다. 동일한 냉각수 온도에서는 충전률이 높을수록 히트파이프의 작동온도가 감소하였다. 열저항 값의 범위는 최소 $0.12^{\circ}C/W$에서 최대 $0.15^{\circ}C/W$까지로 나타났으며 유효 열전도율의 값은 최소 $7,703W/m{\cdot}K$에서 최대 $8,890W/m{\cdot}K$까지 변화했다. 최소 열저항은 충전률 420%인 경우에 나타났는데 이때의 작동온도는 약 $262^{\circ}C$이었다. 히트파이프의 작동한계로서 드라이아웃(dry-out)은 충전률 372%의 경우에 열부하 950 W에서 발생하였으나, 그 이상의 충전률에서는 열부하 1060 W까지 작동한계 발생이 관찰되지 않았다. 실험 결과 본 연구에서의 히트파이프는 중온 태양열 축열조에 적용되어 개당 약 1 kW의 열부하를 이송하면서 축열물질 및 축방열 대상 유동매체와 열교환을 하는데 사용하는데 충분할 것이라 판단된다.

• Journal of the Korean Vacuum Society
• /
• v.22 no.5
• /
• pp.238-244
• /
• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.10 no.1
• /
• pp.100-112
• /
• 2005

Soil temperature was measured from the surface to 40 cm depth at three stations with different heights in tidal flat of Gomso Bay, west coast of Korea, for one month in every season 2004 to examine the thermal structure and the variation. Mean temperature in surface layer was higher in summer and lower in winter than in lower layer, reflecting the seasonal variation of vertically propagating structure of temperature by heating and cooling from the tidal flat surface. Standard deviation of temperature decreased from the surface to lower layer. Periodic variations of solar radiation energy and tide mainly caused short term variation of soil temperature, which was also intermittently influenced by precipitation and wind. Time series analysis showed the power spectral energy peaks at the periods of 24, 12 and 8 hours, and the strongest peak appeared at 24 hour period. These peaks can be interpreted as temperature waves forced by variations of solar radiation, diurnal tide and interaction of both variations, respectively. EOF analysis showed that the first and the second modes resolved 96% of variation of vertical temperature structure. The first mode was interpreted as the heating antl cooling from tidal flat surface and the second mode as the effect of phase lag produced by temperature wave propagation in the soil. The phase of heat transfer by 24 hour period wave, analyzed by cross spectrum, showed that mean phase difference of the temperature wave increased almost linearly with the soil depth. The time lags by the phase difference from surface to 10, 20 and 40cm were 3.2,6.5 and 9.8 hours, respectively. Vertical thermal diffusivity of temperature wave of 24 hour period was estimated using one dimensional thermal diffusion model. Average diffusivity over the soil depths and seasons resulted in $0.70{\times}10^{-6}m^2/s$ at the middle station and $0.57{\times}10^{-6}m^2/s$ at the lowest station. The depth-averaged diffusivity was large in spring and small in summer and the seasonal mean diffusivity vertically increased from 2 cm to 10 cm and decreased from 10 cm to 40 cm. Thermal propagation speeds were estimated by $8.75{\times}10^{-4}cm/s,\;3.8{\times}10{-4}cm/s,\;and\;1.7{\times}10^{-4}cm/s$ from 2 cm to 10 cm, 20 cm and 40 cm, respectively, indicating the speed reduction with depth increasing from the surface.

• Clean Technology
• /
• v.20 no.3
• /
• pp.306-313
• /
• 2014

Nanoporous $TiO_2$ films are commonly used as working electrodes in dye-sensitized solar cells (DSSCs). So far, there have been attempts to synthesize films with various $TiO_2$ nanostructures to increase the power-conversion efficiency. In this work, vertically aligned rutile $TiO_2$ nanorods were grown on fluorinated tin oxide (FTO) glass by hydrothermal synthesis, followed by deposition of an anatase $TiO_2$ film. This new method of anatase $TiO_2$ growth avoided the use of a seed layer that is usually required in hydrothermal synthesis of $TiO_2$ electrodes. The dense anatase $TiO_2$ layer was designed to behave as the electron-generating layer, while the less dense rutile nanorods acted as electron-transfer pathwaysto the FTO glass. In order to facilitate the electron transfer, the rutile phase nanorods were treated with a $TiCl_4$ solution so that the nanorods were coated with the anatase $TiO_2$ film after heat treatment. Compared to the electrode consisting of only rutile $TiO_2$, the power-conversion efficiency of the rutile-anatase hybrid $TiO_2$ electrode was found to be much higher. The total thickness of the rutile-anatase hybrid $TiO_2$ structures were around $4.5-5.0{\mu}m$, and the highest power efficiency of the cell assembled with the structured $TiO_2$ electrode was around 3.94%.

• Journal of Korea Technology Innovation Society
• /
• v.12 no.4
• /
• pp.788-818
• /
• 2009

Renewable energy refers to solar energy, biomass energy, hydrogen energy, wind power, fuel cell, coal liquefaction and vaporization, marine energy, waste energy, and liquidity fuel made out of byproduct of geothermal heat, hydrogen and coal; it excludes energy based on coal, oil, nuclear energy and natural gas. Developed countries have recognized the importance of these energies and thus have set the mid to long term plans to develop and commercialize the technology and supported them with drastic political and financial measures. Considering the growing recognition to the field, it is necessary to analysis up-to-now achievement of the government's related projects, in the standards of type of renewable energy, management of sectional goals, and its commercialization. Korean government is chiefly following suit the USA and British policies of developing and distributing renewable energy. However, unlike Japan which is in the lead role in solar rays industry, it still lacks in state-directed support, participation of enterprises and social recognition. The research regarding renewable energy has mainly examinedthe state of supply of each technology and suitability of specific region for applying the technology. The evaluation shows that the research has been focused on supply and demand of renewable as well as general energy and solution for the enhancement of supply capacity in certain area. However, in-depth study for commercialization and the increase of capacity in industry followed by development of the technology is still inadequate. 'Cost-benefit model for each energy source' is used in analysis of technology development of renewable energy and quantitative and macro economical effects of its commercialization in order to foresee following expand in related industries and increase in added value. First, Investment on the renewable energy technology development is in direct proportion both to the product and growth, but product shows slightly higher index under the same amount of R&D investment than growth. It indicates that advance in technology greatly influences the final product, the energy growth. Moreover, while R&D investment on renewable energy product as well as the government funds included in the investment have proportionate influence on the renewable energy growth, private investment in the total amount invested has reciprocal influence. This statistic shows that research and development is mainly driven by government funds rather than private investment. Finally, while R&D investment on renewable energy growth affects proportionately, government funds and private investment shows no direct relations, which indicates that the effects of research and development on renewable energy do not affect government funds or private investment. All of the results signify that although it is important to have government policy in technology development and commercialization, private investment and active participation of enterprises are the key to the success in the industry.

• Applied Chemistry for Engineering
• /
• v.21 no.1
• /
• pp.29-33
• /
• 2010

In this study, boron, carbon, nitrogen and fluorine co-doped $TiO_{2}$ photocatalysts using tetraethylammonium tetrafluoroborate (TEATFB) have been prepared by different heat treatment temperatures to decrease the band gap. To explore the visible light photocatalytic activity of the novel low‐zband gap $TiO_{2}$ photocatalyst, the removal of two dyes was investigated, namely, acridine orange and rhodamine B. XRD patterns demonstrate that the samples calcined at temperatures up to $800^{\circ}C$ clearly show anatase peaks. The XPS results show that all the doped samples contain N, C, B and F elements and the doped $TiO_{2}$ shows the shift in the band gap transition down to 2.98 eV as UV-DRS results. In these UV-Vis results, photocatalytic activity of the doped $TiO_{2}$ is 1.61 times better than undoped $TiO_{2}$. Specially, excellent photoactivity results were obtained in the case of samples treated at $700^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.59.1-59.1
• /
• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.5-5
• /
• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Ergonomics Society of Korea
• /
• v.36 no.1
• /
• pp.23-36
• /
• 2017

Objective: This paper presents a study to evaluate the WBGT index for assessing the effects of a wide range of outdoor weather conditions on human responses. Background: The Wet Bulb Globe Temperature (WBGT) index was firstly developed for the assessment of hot outdoor conditions. It is a recognised index that is used world-wide. It may be useful over a range of outdoor conditions and not just for hot climates. Method: Four group experiments, involving people performing a light stepping activity, were conducted to determine human responses to outside conditions in the U.K. They were conducted in September 2007 (autumn), December 2007 (winter), March 2008 (spring) and June 2008 (summer). Environmental measurements included WBGT, air temperature, radiant temperature (including solar load), humidity and wind speed all measured at 1.2m above the ground, as well as weather data measured by a standard weather station at 3m to 4m above the ground. Participants' physiological and subjective responses were measured. When the overall results of the four seasons are considered, WBGT provided a strong prediction of physiological responses as well as subjective responses if aural temperature, heart rate and sweat production were measured. Results: WBGT is appropriate to predict thermal strain on a large group of ordinary people in moderate conditions. Consideration should be given to include the WBGT index in warning systems for a wide range of weather conditions. However, the WBGT overestimated physiological responses of subjects. In addition, tenfold Borg's RPE was significantly different with heart rate measured for the four conditions except autumn (p<0.05). Physiological and subjective responses over 60 minutes consistently showed a similar tendency in the relationships with the $WBGT_{head}$ and $WBGT_{abdomen}$. Conclusion: It was found that either $WBGT_{head}$ or $WBGT_{abdomen}$ could be measured if a measurement should be conducted at only one height. The relationship between the WBGT values and weather station data was also investigated. There was a significant relationship between WBGT values at the position of a person and weather station data. For UK daytime weather conditions ranging from an average air temperature of $6^{\circ}C$ to $21^{\circ}C$ with mean radiant temperatures of up to $57^{\circ}C$, the WBGT index could be used as a simple thermal index to indicate the effects of weather on people. Application: The result of evaluation of WBGT might help to develop the smart clothing for workers in industrial sites and improve the work environment in terms of considering workers' wellness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.137-137
• /
• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.