• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.424.2-424.2
• /
• 2016

Solar cell converts light energy to electric energy. But a solar cell generates low power, PV module is fabricated by connected in series with dozens of solar cell. Owing to solar cell connected in series, power of PV module is influenced by shading or mismatch power of solar cells. To prevent power loss of PV module by shading or mismatch current, Bypass diodes are installed in PV module. Bypass diode operating reverse voltage by shading or mismatch power of solar cells bypass mismatch current. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we confirm characteristics variation of PV module with damaged bypass diode. As a result, power of PV module with damaged bypass diode is reduced and Temperature of that is increased.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제12권1호
• /
• pp.59-65
• /
• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• 반도체디스플레이기술학회지
• /
• 제21권1호
• /
• pp.127-131
• /
• 2022

The effect of bypass diodes on the output energy of solar cells was investigated under the condition of partial shading. The maximum power point was estimated using the perturbation & observation algorithm, taking into account the correlation effect between the arrangement and number of bypass diodes. The performance of the bypass diode was tested under the consideration of the partial shading effect and simulated using a Matlab/Simulink.

• 한국태양에너지학회 논문집
• /
• 제37권4호
• /
• pp.1-11
• /
• 2017

Most PV modules are fabricated by 6 cell-strings with solar cells connected in series. Moreover, bypass diodes are generally installed every 2 cell-strings to prevent PV modules from a damage induced by current mismatch or partial shading. But, in the case of special purpose PV module, like as BIPV (Building Integrated Photovoltaic), the number of cell-strings per module varies according to its size. Differ from a module employing even cell-strings, the configuration of bypass diode should be optimized in the PV module with odd strings because of oppositely facing electrodes. Hence, in this study, electrical characteristics of special purposed PV module with odd string was empirically and theoretically studied depending on arrangement of bypass diode. Here, we assumed that PV module has 3 strings and the number of bypass diodes in the system varies from 2 to 6. In case of 2 bypass diodes, shading on a center string increases short circuit current of the module, because of a parallel circuit induced by 2 bypass diodes connected to center string. Also, the loss is larger, as the shading area in the center string is enlarged. Thus, maximum power of the PV module with 2 bypass diode decreases by up to 59 (%) when shading area varies from 50 to 90 (%). On the other hand, In case of 3 and 6 bypass diodes, the maximum power reduction was within about 3 (W), even the shading area changes from 50 to 90 (%). As a result, It is an alternative to arrange the bypass diode by each string or one bypass diode in the PV module in order to completely bypass current in case of shading, when PV module with odd string are fabricated.

• 한국섬유공학회:학술대회논문집
• /
• 한국섬유공학회 2003년도 봄 학술발표회 논문집
• /
• pp.356-357
• /
• 2003

Organic materials are suitable for use in photoelectric conversion devices. Thus, Organic semiconductors are promising materials for photovoltaic devices and other optoelectronic applications such as light emitting diodes(LED). The organic solar cell seems to be the usefulness in comparison with the inorganic solar cell in terms of workability, ease of processing, low cost, flexibility and area expansion. (omitted)

• 한국태양에너지학회 논문집
• /
• 제35권4호
• /
• pp.67-75
• /
• 2015

PV module is conventionally connected in series with some solar cell to adjust the output of module. Some bypass diodes in module are installed to prevent module from hot spot and mismatch power loss. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we study the thermal and electrical characteristics change of module with damaged bypass diode to easily find module with damaged bypass diode in photovoltaic system consisting of many modules. Firstly, the temperature change of bypass diode is measured according to forward and reverse bias current flowing through bypass diode. The maximum surface temperature of damaged bypass diode applied reverse bias is higher than that of normal bypass diode despite flowing equal current. Also, the output change of module with and without damaged bypass diode is observed. The output of module with damaged bypass diode is proportionally reduced by the total number of connected solar cells per one bypass diode. Lastly, the distribution temperature of module with damaged bypass diode is confirmed by IR camera. Temperature of all solar cells connected with damaged bypass diode rises and even hot spot of some solar cells is observed. We confirm that damaged bypass diodes in module lead to power drop of module, temperature rise of module and temperature rise of bypass diode. Those results are used to find module with a damaged bypass diode in system.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2019년도 춘계학술대회
• /
• pp.137-138
• /
• 2019

태양광 접속반은 태양전지에서 발생된 전압을 인버터에 연결해주는 장치이다. 태양광 접속반에는 인버터에서 태양전지로 흐르는 역전압을 차단하기 위해 다이오드가 사용된다. 이 다이오드의 발열이 태양광 접속반 화재의 주 원인이다. 본 논문에서는 IoT 기기들을 사용하여 다이오드의 발열상태를 감시하고 화재를 예방하는 방법을 제안한다.

• 한국정보통신학회논문지
• /
• 제16권3호
• /
• pp.549-557
• /
• 2012

본 논문에서는 CMOS 공정의 p-diff/n-well 다이오드만을 사용한 ISC(Integrated Solar Cell)를 이용하여 MPPT(Maximum Power Point Tracking) 제어 기능을 갖는 온칩 빛에너지 하베스팅 시스템을 제안하였다. MPPT 제어는 PV(Photovoltaic) 셀의 개방전압과 MPP(Maximum Power Point) 전압간의 비례관계를 이용하여, 작은 pilot PV 셀로 하여금 main PV 셀의 MPP를 실시간 추적할 수 있도록 설계하였다. 모의실험 결과 설계된 회로는 MPPT 제어기능을 적용했을 때 부하가 큰 경우에도 MPP 근처의 전압을 부하에 공급함으로써 부하에 연결된 회로가 정상적으로 동작하는 것을 확인하였다. 제안된 회로는 0.18um CMOS 공정으로 설계하였으며, main PV 셀과 pilot PV 셀의 면적은 각각 $8mm^2$와 $0.4mm^2$이다.

• 태양에너지
• /
• 제18권2호
• /
• pp.105-113
• /
• 1998

일반적으로 열 다이오드(thermo-diode)란 임의의 한 방향으로만 열 전달이 가능하도록 설계된 열 전달 기구이나, 열 흐름이 원하는 방향으로 이루어지는 양방향 열 다이오드를 사용한다면 겨울철 난방과 여름철 냉방부하 감소에 모두 효과적으로 적용될 수 있다. 본 연구에서는 루프형 양방향 열 다이오드를 응용한 태양열 이용 시스템을 설계 제작하였으며, test cell을 이용한 옥외 실험을 수행하여 실용 가능성을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제16권2호
• /
• pp.39-43
• /
• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.