• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.300-300
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• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.2-418.2
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• 2016

$Al_2O_3$ passivation layer has excellent passivation properties at p-type Si surface. This $Al_2O_3$ layer forms thin $SiO_2$ layer at the interface. There were some studies about inserting thermal oxidation process to replace naturally grown oxide during $Al_2O_3$ deposition. They showed improving passivation properties. However, thermal oxidation process has disadvantage of expensive equipment and difficult control of thin layer formation. Wet chemical oxidation has advantages of low cost and easy thin oxide formation. In this study, $Al_2O_3$/$SiO_2/Si(100)$ interface was formed by wet chemical oxidation and PA-ALD process. $SiO_2$ layer at Si wafer was formed by $HCl/H_2O_2$, $H_2SO_4/H_2O_2$ and $HNO_3$, respectively. 20nm $Al_2O_3$ layer on $SiO_2/Si$ was deposited by PA-ALD. This $Al_2O_3/SiO_2/Si(100)$ interface were characterized by capacitance-voltage characteristics and quasi-steady-state photoconductance decay method.

• Journal of the Korean Solar Energy Society
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• v.34 no.1
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• pp.98-104
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• 2014

Photovoltaic (PV) cell is considered as one of the finest ways to utilize the solar power. A study of improving solar cell's efficiency is important because the lifetime of solar cell is determined by photovoltaic module technology. Therefore, oxidation (and/or corrosion) of solder materials will be one of the primary yield and long-term reliability risk factor. Recently, the development of lead-free solder alloy has been done actively about lead-free solder alloys of the thermodynamic and mechanical properties. However, the oxidation behavior have rarely been investigated In this study, the oxidations of 60 wt% Sn-40 wt% Pb, 62 wt% Sn-36 wt% Pb -2 wt% Ag, 50wt% Sn-48 wt% Bi-2 wt% Ag alloys for the interconnect ribbon after exposure in atmosphere at $100^{\circ}C$ for several times were investigated. The wettability of 62 wt% Sn-36 wt% Pb-2 wt% Ag and 50 wt% Sn-48 wt% Bi-2 wt% Ag solders was also studied to compare with that of 60 wt% Sn-40 wt% Pb alloy. The results howed that the zero cross time and the wetting time of 50 wt% Sn-48 wt% Bi-2 wt% Ag solder were better than other two samples. The surface of tested samples was analyzed by XPS. The XPS result showed that in all samples, SnO grew first and then the mixture of SnO and $SnO_2$ was detected. $SnO_2$ grew predominantly for the long time aging. Moreover XPS depth profile analysis has found surface enrichment of tin oxide.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.18-26
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• 2023

Tin perovskite solar cells have attracted a lot of attention due to their potential to address the toxicity of lead, which is the biggest barrier to commercialization of perovskite solar cells. Unlike other lead-free perovskite, tin perovskite have a direct bandgap, which is suitable for use as light harvesting, and relatively good stability, which has led to a lot of attention. Since the first tin perovskite solar cell was reported in 2014, it has achieved an impressive power conversion efficiency of 14.81%. However, this efficiency is still low compared to that of lead perovskite solar cells, and the stability of tin perovskite solar cells is also an issue that needs to be addressed. In this review, we will discuss the basic properties of the tin atom in comparison to the lead atom, and then discuss the crystal structure, phase transition, and basic properties of tin perovskite. We will then discuss the advantages, applications, challenges, and strategies of tin perovskite, In particular, we will focus on how to prevent the oxidation of tin, which is arguably the biggest challenge for using tin perovskite solar cells. At the end, we summarize the key factors that need to be addressed for higher efficiency and stability, emphasizing what is needed to commercialize tin perovskite solar cells.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.544-551
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• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.2-77.2
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• 2013

In this talk, I will briefly review recent results of my group related to application of atomic layer deposition (ALD) for fabricating environmental catalysts and organic solar cells. ALD was used for preparing thin films of TiO2 and NiO on mesporous silica with a mean pore size of 15 nm. Upon depositing TiO2 thin films of TiO2 using ALD, the mesoporous structure of the silica substrate was preserved to some extent. We show that efficiency for removing toluene by adsorption and catalytic oxidation is dependent of mean thickness of TiO2 deposited on silica, i.e., fine tuning of the thickness of thin film using ALD can be beneficial for preparing high-performing adsorbents and oxidation catalysts of volatile organic compound. NiO/silica system prepared by ALD was used for catalysts of chemical conversion of CO2. Here, NiO nanoparticles are well dispersed on silica and confiend in the pore, showing high catalytic activity and stability at 800oC for CO2 reforming of methane reaction. We also used ALD for surface modulation of buffer layers of organic solar cell. TiO2 and ZnO thin films were deposited on wet-chemically prepared ZnO ripple structures, and thin films with mean thickness of ~2 nm showed highest power conversion efficiency of organic solar cell. Moreover, performance of ALD-prepared organic solar cells were shown to be more stable than those without ALD. Thin films of oxides deposited on ZnO ripple buffer layer could heal defect sites of ZnO, which can act as recombination center of electrons and holes.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.12
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• pp.82-90
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• 2019

This analysis demonstrates the effective removal of heat generated from a solar panel's output degradation factor solar cells (the solar panel's output deterioration factor), and solves the problems of oxidation and corrosion in existing metal heat sinks. The heat-dissipating test specimen was prepared using carbon materials; then, its thermal conductivity and its effectiveness in reducing temperatures were studied using heat transfer numerical analysis. As a result, the test specimen of the 30g/㎡ basis weight containing 80% of carbon fiber impregnated with carbon ink showed the highest thermal conductivity 6.96 W/(m K). This is because the surface that directly contacted the solar panel had almost no pores, and the conduction of heat to the panels appeared to be active. In addition, a large surface area was exposed to the atmosphere, which is considered advantageous in heat dissipation. Finally, numerical analysis confirmed the temperature reduction effectiveness of 2.18℃ in a solar panel and 1.08℃ in a solar cell, depending on the application of heat dissipating materials.