• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.288-292
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• 1998

In this paper, we fabricated $SnO_2$ composite ceramics doped with 0~20mol% $SnO_2$ of bulk type to investigate the CO and $H_2$ gas sensitivity in various composition, temperature, and concentration of CO and $H_2$ gas. At the temperature range from $100^{\circ}C\sim425^{\circ}C$, the measured 1000ppm and 250ppm CO gas sensitivities of $SiO_2-SnO_2$composite ceramics were about 1.0~7.6 and 1.0~5.6, respectively. These values were about 1.0~1.5 times larger than pure $SnO_2$. The maximum 1000ppm CO gas sensitivity of $SiO_2-SnO_2$composites were measured around $325^{\circ}C$. At the temperature range from $270^{\circ}C\sim380^{\circ}C$, the 1000ppm and 500ppm $H_2$gas sensitivities of $SiO_2-SnO_2$ composites were about 2.9~21.2 and 2.1~11.3, respectively. Also the maximum 1000, 500 ppm $H_2$ gas sensitivities of samples were measured around.

• 한국가스학회지
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• 제13권2호
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• pp.23-29
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• 2009

Pt, Pd, In 등의 촉매금속을 사용하여 아세토나이트릴 유독가스에 대한 감도를 향상시키는 SnO2 가스센스에 대하여 연구하였다. Metal-SnO2 후막은 백금전극이 내장된 알루미나 지지체의 스크린법으로 제작되었다. 본 센서의 특성은 검출가스의 농도의 함수로 반응기내 각센서의 전기적 저항을 측정하여 조사하였으며, 10-50ppm 범위의 유독가스 농도에 대하여 검지 측정하였다. 그 결과 촉매금속의 종류에 따라 센서에서 반응하는 감도가 각각 다르게 선택성을 갖고 있는 것으로 나타났다.

• 한국재료학회지
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• 제23권8호
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• pp.435-440
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• 2013

Transparent and conducting thin films of Ta-doped $SnO_2$ were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of $SnO_2$ decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (${\rho}{\sim}1.1{\times}10^{-3}{\Omega}{\cdot}cm$) for 10 wt% Ta-doped $SnO_2$ film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped $SnO_2$ film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.

• 공업화학
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• 제17권5호
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• pp.561-564
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• 2006

$SnO_{2}$가 도핑된 아나타제형의 $TiO_{2}$ 분말을 tin (IV) bis (acetylacetonate) dichloride와 titanium diisopropoxide bis (acetyl- acetonate)를 출발물질로, polyethylene glycol (PEG)을 첨가하여 합성하였다. 반응과정에 대한 구조변화를 FT-IR로 추적하였고, 입자의 모양과 형태 및 결정의 구조는 FE-SEM과 XRD 분석기로 관찰하였다. 합성된 분말의 광촉매 효과는 환경오염물질로 indigo carmine (IC)을 선택하여 UV-visible 스펙트라로 관찰하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.183.1-183
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• 2002

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.388-393
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• 2018

Sublimation of $Bi_2O_3$-based materials is an important degradation issue for the long-term applications of many electronic devices. A series of $SnO_2$-doped $Bi_2O_3$ materials (SBO), was synthesized, densified, and then tested in air or strong reducing atmosphere. The $SnO_2$-doping effects and sublimation kinetics of the SBO materials were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and precise mass loss measurement. The results show that formation of $Bi_2Sn_2O_7$ phase greatly retards the mass loss of SBO. The SBO samples show a surface sublimation in an energy of $52.6kJ{\cdot}mol^{-1}$. However, the sublimation is also controlled by surface microstructure as the amount of vaporizing species (the Bi or gaseous Bi-oxides) is more than 0.1 mass%. The evaporation is retarded on the rough surface and the mechanism of surface evaporation is changed to diffusional control.

• 센서학회지
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• 제10권4호
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• pp.222-231
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• 2001

$SnO_2$의 물성을 $Fe_2O_3$ 첨가량, 산소분압, CO 기체농도, 그리고 온도의 함수로서 관찰하였다. 시편은 후막인쇄 기법으로 알루미나 기판 위에 제조하였다. $700^{\circ}C$/6h 소성한 시편들의 $Fe_2O_3$첨가량에 따른 미세구조와 입자분포의 차이는 거의 없었다. $Fe_2O_3$를 첨가하지 않은 $SnO_2$의 전기적 성질은 소성온도가 낮은 경우와 산소분압이 낮은 경우에 전도성이 높게 측정되었다. $Fe_2O_3$를 첨가한 $SnO_2$의 전도성은 측정온도 증가로 증가하지만 $Fe_2O_3$ 첨가량 증가로 전도성은 감소하였다. 산소분압 의존성은 $Fe_2O_3$ 첨가로 감소하였다. CO 가스에 대한 기체 센서 특성 중 감도는 $350^{\circ}C$, 0.1 mol% $Fe_2O_3$를 첨가한 경우에 가장 높았고, 재현성 및 응답성도 양호하게 나타났다.

• 센서학회지
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• 제21권6호
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• 한국재료학회지
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• 제21권10호
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• pp.546-549
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• 2011

Nano-sized $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized $SnO_2$ thick film sensors were treated in a $N_2$ atmosphere. The structural properties of the nano $SnO_2$with a rutile structure according to XRD showed a (110) dominant $SnO_2$ peak. The particle size of $SnO_2$:Ni nano powders at Ni 8 wt% was about 45 nm, and the $SnO_2$ particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano $SnO_2$-based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors doped with 8 wt% Ni. The response time of the $SnO_2$:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the $CH_4$ and $CH_3CH_2CH_3$ gases.

• 한국표면공학회지
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• 제32권2호
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• pp.125-133
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• 1999

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.