• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.38-42
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• 2008

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromachining techniques. The sensing materials used to detect the offensive $CH_3SH$ and $(CH_3)_3N$ gases are 1 wt% Pd-doped $SnO_2$ and 6 wt% $Al_2O_3$-doped ZnO, respectively. The optimum operating temperatures of the devices are $250^{\circ}C$ and $350^{\circ}C$ for $CH_3SH$ and $(CH_3)_3N$, respectively and the corresponding heater power is, respectively, about 55mW and 85mW. Excellent thermal insulation is achieved by the use of a double-layer membrane: i.e. $0.2{\mu}m$-thick silicon nitride and $1.4{\mu}m$-thick phosphosilicate glass. The sensors are mechanically stable enough to endure the heat cycles between room temperature and $350^{\circ}C$, at least for 30 days.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.453.1-453.1
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• 2014

Fluorine-doped tin oxide (FTO), which is commonly used in dye-sensitized solar cells (DSSCs), is a promising material of transparent conducting oxides (TCOs) because of advantages such as high chemical stability, high resistance, high optical transparency (>80% at 550nm), and low electrical resistivity (${\sim}10-4{\Omega}{\cdot}cm$). Especially, dye-sensitized solar cells (DSSCs) have been actively studied since Gratzel's research group required FTO substrate as a charge collector. When FTO substrates are used in DSSCs, photo-injected electrons may experience recombination at interface between dye-bonded semiconductor oxides ($TiO_2$) on FTO substrate and the electrolyte. To solve these problems, one is that because recombination at FTO substrate cannot be neglected, thin $TiO_2$ layer on FTO substrate as a blocking layer was introduced. The other is to control the morphology of surface on FTO substrate to reduce a loss of electrons. The structural, electrical, and optical characteristics of morphology controlled-FTO thin films as TCO materials were analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Hall Effect Measurement, and UV spectrophotometer. The performance of DSSCs fabricated with morphology controlled FTO substrates was performed using Power Conversion Efficiency (PCE). We will discuss these results in detail in Conference.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.192-197
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• 2009

Carbon nanotubes (CNT) were used as a catalyst support where catalytically active Pd and Pt metal particles decorated the outside of the external CNT walls. In this study, Pd and Pt nanoparticles supported on $HNO_3$-treated CNT were prepared by microwave-assisted heating of the polyol process using $PdCl_2$ and $H_2PtCl_6{\codt}6H_2O$ precursors, respectively, and were then characterized by SEM, TEM, and Raman. Raman spectroscopy showed that the acid treated CNT had a higher intensity ratio of $I_D/I_G$ compared to that of non-treated CNT, indicating the formation of defects or functional groups on CNT after chemical oxidation. Microwave irradiation for total two minutes resulted in the formation of Pd and Pt nanoparticles on the acid treated CNT. The sizes of Pd and Pt nanoparticles were found to be less than 10 nm and 3 nm, respectively. Furthermore, the $SnO_2$ films doped with CNT decorated by Pd and Pt nanoparticles were prepared, and then the $NO_2$ gas response of these sensor films was evaluated under $1{\sim}5\;ppm$ $NO_2$ concentration at $200^{\circ}C$. It was found that the sensing property of the $SnO_2$ film sensor on $NO_2$ gas was greatly improved by the addition of CNT-supported Pd and Pt nanoparticles.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.189-189
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• 2009

다양한 증착 조건에서 마그네트론 2원 동시 방전법을 이용하여 유리기판위에 ITO (10wt% $SnO_2$ 타겟과 $Yb_{2}O_{3}$ 타겟을 사용하여 증착한 ITO:Yb 박막의 구조적, 전기적 특성을 연구하였다. 스퍼터 가스로서는 Ar 가스를 사용하였고, RF power가 0W이고 어닐링온도가 $200^{\circ}C$일 때, 가장 낮은 비저항 $2.442{\times}10^{-4}{\Omega}cm$을 나타내었다. ITO:Yb 박막의 전기적 특성은 Hall 효과 측정장비, 박막의 결정구조는 X-선 회절(XRD), 광학적 특성은 UV 측정장비를 사용하여 측정하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.192-195
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• 2000

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.363-368
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• 2010

In this work, electrochemiluminescence (ECL) cell using nanocrysralline $TiO_2$ electrode and Ru(II) complex (Ru${(bpy)_3}^{2+}$) is fabricated for low-cost high-efficient energy conversion device application. The nanocrysrallme $TiO_2$ layer (${\sim}10{\mu}m$ thickness) with large surface area (${\sim}360m^2$/g) can largely inject electrons from nanoporous $TiO_2$ electrode and allows the oxidation/reduction of Ru(II) complex in the nanopores. The cell structure is composed of a glass/ F-doped $SnO_2$(FTO)/ porous $TiO_2$/ Ru(II) complex in acetonitrile/ FTO/ glass. The nanocrysralline $TiO_2$ layer is prepared using sol-gel combustion method. The ECL efficiency of the cell consisting of the porous $TiO_2$ layers was 250 cd/W, which was higher than that consisting of only FTO electrode (50cd/W). The nanoporous $TiO_2$ layers wwas effective for increasine ECL intensities.