• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.26.2-26.2
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.31-37
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• 2021

Sn-3wt%Ag-0.5wt%Cu (SAC305) solder is most popular solder in electronics industry. However, SAC305 has also drawbacks such as growth of β-Sn phase, intermetallic compounds (IMCs) of Ag3Sn, Cu6Sn5 and Cu3Sn which can result in deterioration of solder joints in terms of metallurgically, mechanically and electrically. Thus, improvement of SAC305 solders have been investigated continuously by addition of alloying elements, nano-particles and etc. In this paper, recent improvements of SAC solders including nano-composite alloys and related solderabilty and metallurgical and mechanical properties are investigated.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• Journal of Mechanical Science and Technology
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• v.16 no.7
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• pp.919-926
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• 2002

In this study, the numerical prediction of the thermal fatigue lie? of a $\mu$BGA (Micro Ball Grid Array) solder joint was focused. Numerical method was performed using the three-dimensional finite element analysis for various solder alloys such as Sn-37%Pb, Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-3.5%Ag-3%In-0.5%Bi during a given thermal cycling. Strain values obtained by the result of mechanical fatigue tests for solder alloys, were used to predict the solder joint fatigue life using the Coffin-Manson equation. The numerical results showed that Sn-3.5%Ag with the 50-degree ball shape geometry had the longest thermal fatigue life in low cycle fatigue. A practical correlation for the prediction of the thermal fatigue life was also suggested by using the dimensionless variable γ. Additionally Sn-3.5Ag-0.75Cu and Sn-2.0Ag-0.5Cu-2.0Bi were applied to 6$\times$8$\mu$BGA obtained from the 63Sn-37Pb Solder. This 6$\times$8$\mu$BGA were tested at different aging conditions at 130$\^{C}$, 150$\^{C}$, 170$\^{C}$ for 300, 600 and 900 hours. Thickness of the intermetallic compound layer was measured thor each condition and the activation energy thor their growth was computed. The fracture surfaces were analyzed using SEM (Scanning Electron Microscope) with EDS ( Energy Dispersive Spectroscopy).

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.36-38
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• 2006

We investigated that the metallurgical, mechanical and electrical properties of the Sn-3.SAg/Cu ball grid array (BGA) solder joints at a reflow temperature of $255^{\circ}C$ for different reflow times of 10, 60, 300 and 1800 s. Two different intermetallic compound (IMC) layers, consisting of scallop-shaped $Cu_6Sn_5$ and very thin $Cu_3Sn$, formed at the solder/substrate interface, and their thicknesses increased with increasing reflow time. The shear force peaked after reflow for 60 s, and then significantly decreased with increasing reflow time. The fracture occurred along the solder ball in the initial reflow, but the fraction of the brittle fracture increased with increasing reflow time. The IMC growth and the volume of Cu dissolved in the solder balls affected the electrical property.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.215-221
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• 2017

The electroless plating process largely consists of substrate cleaning, seed formation (activator formation), and electroless plating. The most widely used activator in the seed formation step is Pd, and Sn ions are used to facilitate the formation of this Pd seed layer. This is problematic because the Sn ions interfere with the reduction of Cu ions during electroless plating; thus, the Sn ions must be removed by a hydrochloric acid cleaning process. This method is also expensive due to the use of Pd. In this study, Cu electroless plating was performed by forming a seed layer using a silver nanosol instead of Pd and Sn. The effects of the Ag nanosol concentration in the pretreatment solution and the pretreatment time on the thickness and surface morphology of the Cu layer were investigated. The degrees of adhesion to the substrate were similar for the electroless-plated Cu layers formed by conventional Pd activation and those formed by the Ag nanosol.

• ETRI Journal
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• v.41 no.6
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• pp.820-828
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• 2019

A highly reliable conductive adhesive obtained by transient liquid-phase sintering (TLPS) technologies is studied for use in high-power device packaging. TLPS involves the low-temperature reaction of a low-melting metal or alloy with a high-melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag-coated Cu, a Sn96.5-Ag3.0-Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 ℃, consistent with the transient behavior of Ag₃Sn + Cu₆Sn₅ → liquid + Cu₃Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.1-6
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• 2017

The effect of metal turnover (MTO) of electroless Ni plating bath on the brittle fracture behavior of electroless nickel electroless palladium immersion gold (ENEPIG)/Sn-3.0wt%Ag-0.5wt%Cu(SAC305) solder joint was evaluated in this study. The MTOs of the electroless Ni for the ENEPIG surface finish were 0 and 3. As the MTO increased, the interfacial IMC thickness increased. The brittle fracture behavior of the ENEPIG/SAC305 solder joint was evaluated with high speed shear (HSS) test. The HSS strength decreased with increasing the MTO of the electroless Ni bath. The brittle fracture increased with increasing the shear speed of the HSS test. The percentage of the brittle fracture for the 3 MTO sample was much higher than that for the 0 MTO sample.