• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.563-564
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• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A diamond disk use during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In. this study, we characterized diamond disk with 9 kinds of sample.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.27-33
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• 2005

Polishing pads play an important role in chemical mechanical polishing(CMP) which has recently been recognized at the most effective method to achieve global planarization. In this paper, we have investigated CMP characteristics as a change of groove density of polishing pads. The parameter $(K_n)$ is proposed to estimate groove density of pad. The $K_n$ is defined as groove area divided by pitch area. As the groove density value increased, removal rate increased to some point and then gradually saturated in case of increasing the groove density excessively. In addition Within wafer non-uniformity(WIWNU) worse as groove density increased excessively, although WIWNU improved as groove density increased. Also the uniformity of temperature of pad surface decreased as the groove density increased. It was because that the cooling effect increased as groove density increased. In other words, increasing the groove density which means the apparent contact area of pad has influence on amount of discharge of slurry during polishing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.81-86
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• 1998

The light aggregates were fabricated by sintering green bodies made form the fly ash-clay alip. The content of fly ashes in the slip could be increased up to 70wt.% due to controlled rheological behavior of the slip, and the green body of uniform microstructure could be obtained by DCC(Direct Coagulation Casting)method. The apparent density, microstructure and compressive strength for sintered bodies fired at 1100∼1200$^{\circ}C$ were evaluated. The properties of light aggregates fabricated depend on slip density, particle behavior in the slip and sintering conditions. The sintered body prepared by firing a green body made from slip of density 1.60 at 1150$^{\circ}C$/2hr satisfied conditions of a light aggregate as apparent density of 1.49${\pm}$0.02 and compressive strength of 584${\pm}$62kg/$\textrm{cm}^2$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.19-22
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• 1997

The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.113-122
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• 2000

Column tests in the laboratory were preformed to investigate characteristics of settling process of dredged soil sampled from in-situ. Test results were analyzed by using the existing theories on discrete settling and hindered settling. From column tests of monitoring the interface with time, settling was found to be a linear process with time and the settling rate was increased with initial water content of slurry. The settling rate was also observed to decrease with increasing initial height of slurry. Most of settling process were composed of flocculation, hindered settling and self-weight consolidation. On the other hands, flocculation of soil during settling was observed and it was found that the size and density of flocculated particles could be analyzed by using the method proposed by Richardson and Zaki.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.74-79
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• 2001

Alumina composite reinforced by chopped alumina fiber was fabricated by filter-pressing the fiber slurry followed by the infiltration of alumina slurry. The chopped fiber was coated with nickel by electroless plating method. The green samples were densified by hot-pressing. Microstructures were studied by SEM and the mechanical properties such as bending strength and fracture toughness were measured. The resulting mechanical properties were analyzed in relation with processing parameters such as preform density and resulting microstructures. The load-displacement curve of the specimen with Ni interlayer but without Ni inclusion showed brittle fracture mode due to the direct contact between matrix and fiber. The load-displacement curve of the specimen with Ni interlayer and Ni inclusion in the matrix which is introduced by high applied pressure during specimen preparation showed non-brittle fracture mode due to the fiber pull-out and dutile phases in the matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.33-38
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• 2006

Aerosol slurry composed of dielectric materials, distilled water, and deflocculants was sprayed on the substrates, through a high-pressure spray gun as an aerosol. The coated layers were cofired together with $Al_{2}O_{3}$ substrates and green sheets on which the inner connectors were printed. Although the coating rate of coated layers strongly depended on slurry viscosity, spray shape, and the pressure of the spray gun, the coated density was not changed. Buried conductors were maintained as printed by high pressure spray coating method, because the pressing process was not used. At the optimum condition of air controller step 3-4 and slurry viscosity c.p 2000-4000, dense and uniform layers could be achieved. Comparing with conventional lamination process using green sheets, spray coating method enabled thin dielectric layers of $20{\sim}50{\mu}m$.