• Korean Journal of Optics and Photonics
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• v.20 no.6
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• pp.339-345
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• 2009

The high power and single mode vertical cavity surface emitting laser(VCSEL)s with photonic crystal structures have been proposed and fabricated by reducing substantially the hole numbers used in the photonic crystal structures. It is found that only six holes enable VCSELs to operate a single mode and the reliability can be enhanced by filling the holes with polyimide. The single mode lasing characteristics were analyzed by varying the oxide aperture and the hole diameter in photonic crystal structures. As a result, the single mode lasing can be stably obtained in the photonic crystal vertical cavity surface emitting lasers.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.157-161
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• 2012

This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

• ETRI Journal
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• v.32 no.2
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• pp.339-341
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• 2010

The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.41-47
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• 2009

We report the spectral characteristics of Multimode Interferometer (MMI)-coupled semicondoctor square ring resonators. The epitaxial layers of the proposed semiconductor ring resonator consists of $1.55{\mu}m$ GaInAsP-InP multiple quantum wells. The lasing characteristics were observed by varying the structure parameters of the MMI-coupled square ring resonators. It is concluded that the MMI-coupled scheme selects a single spectral lasing mode in the double square ring cavities.

• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.149-157
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• 2004

We have calculated the power extraction efficiency and the lasing wavelength distribution of complex-coupled(CC) DFB lasers above threshold for various｜$\chi$L｜ and facet reflectivity combinations, and we have compared the results with those at threshold. Also, we have investigated the effect of coupling coefficient ratio(CR) and the reflectivity of AR facet on the power extraction efficiency and the lasing wavelength distribution. At threshold, the single mode yield as a function of power extraction efficiency of in-phase(IP) CC DFB lasers is the same as that of anti-phase(AP) CC DFB lasers. Above threshold, however, the single mode yield as a function of power extraction efficiency of IP CC DFB lasers is much larger than that of AP CC DFB lasers. For IP CC DFB lasers, AR-HR combination has high single mode yield and large power extraction efficiency compared to other facet combinations. IP CC DFB laser with AR-HR combination for ｜$\chi$L｜of 0.8 has the highest single mode yield and largest power extraction efficiency above threshold among the cases considered. For AR-HR combination, as CR increases and the reflectivity of AR facet decreases, both single mode yield and power extraction efficiency increase due to the reduction of the spatial hole burning effect. For AR-HR combination, the lasing wavelength of CC DFB laser has distributed over the stopband of DFB. As CR increases, the lasing wavelength concentrates on the long wavelength side for IP CC DFB laser, while on the short wavelength side for AP CC DFB laser. As ｜$\chi$L｜ increases, the width of the wavelength distribution decreases and the lasing wavelength moves to the long wavelength side.

• Korean Journal of Optics and Photonics
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• v.27 no.5
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• pp.181-187
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• 2016

We report on the parameter-dependent optical characteristics of the unidirectional single-mode lasing square ring cavities. Using the taper-step section in the square cavities, the resonant direction can be selected and we characterize the optical losses by changing the taper lengths. Various kinds of square ring cavities are fabricated, based on InGaAsP/InGaAs multiple quantum well semiconductor materials. From the experimental results we obtain the optimized taper length for a given device structure, while maintaining unidirectional single-mode lasing.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.292-297
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• 2003

A diode-pumped single-mode Nd:YV $O_4$ green laser was developed. Frequency doubling of the laser was achieved by using an intracavity KTP generated green beam (532 nm). By comparing the diode laser spectrum with absorption spectrum of the Nd:YV $O_4$ crystal, we found optimal operating temperature of the diode laser. From output power measured for various mirror curvatures and cavity lengths, we found the optimal matching of TE $M_{00}$ mode with the pump beam gives the best efficiency. When the pump power was 1.9 W, 80 ㎽ of TE $M_{00}$ mode green beam was obtained. We tried to get a single longitudinal mode lasing as the fluctuation of the laser power was caused by the shift of longitudinal modes and the beating between the modes. We tested the intracavity etalon method and birefringent filter method for single mode operation. The etalon method resulted in the best single mode output power of 60 ㎽. The power fluctuation of the single-mode laser was reduced to 1/10 of that of the multi-mode laser.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.88-89
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• 1999

• ETRI Journal
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• v.24 no.3
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• pp.255-258
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• 2002

We created a new design for an Nd-doped clad-pumped silica fiber laser to enhance the pump absorption and lasing efficiency for a butt-coupled, end-pumped scheme. Two concatenated adiabatic tapers formed within the laser cavity simultaneously removed higher order modes and were spliced to conventional single mode fibers. We theoretically analyzed mode propagation along the composite cavity and experimentally achieved continuous wave oscillation in the $LP_{01}$ mode at $1.06\;{\mu}m$ and a laser output power of over 820 mW with a slope efficiency of 27%.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.326-336
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• 2008

A WDM-PON has been considered as an ultimate solution for access networks. However, there were many technical and practical issues for commercial deployment. These issues were solved with wavelength locked F-P LD and the WDM-PONs employing this optical source were commercialized. These WDM-PON systems have been deployed in Korea, Europe, and US. We reviewed wavelength locking technology and WDM-PON achievements. When we inject spectrum sliced broadband light into an F-P LD, the multimode output is changed to a quasi single mode. Then, we can use the single mode light for WDM signal transmission. The broad spectral gain of the semiconductor gain medium enables a color-free operation of WDM-PON, i.e., an identical ONT can be used for each user. The wavelength locking properties depend on many parameters, especially alignment of injection wavelength to a lasing mode, passband profile of AWG and front facet reflectivity of F-P LD. However, these dependencies can be reduced by proper design of the laser and the injection bandwidth. Thus, WDM-PON systems have been achieved with color-free operation.