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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides

  • Leem, Young-Ahn (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Ki-Soo (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Song, Jung-Ho (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kwon, O-Kyun (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Gyung-Ock (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2009.08.31
  • Accepted : 2009.12.28
  • Published : 2010.04.30
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Abstract

The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

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References

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