• Microbiology and Biotechnology Letters
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• v.40 no.4
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• pp.414-418
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• 2012

The quantity of research on microbial fuel cells has been rapidly increasing. Microbial fuel cells are unique in their ability to utilize microorganisms and to generate electricity from sewage, pig excrement, and other wastewaters which include organic matter. This system can directly produce electrical energy without an inefficient energy conversion step. However, with MFCs maximum power production is limited by several factors such as activation losses, ohmic losses, and mass transfer losses in cathodes. Therefore, electron acceptors such as nitrate and ferric ion in the cathodes were utilized to improve the cathode reaction rate because the cathode reaction is very important for electricity production. When 100 mM nitrate as an electron acceptor was fed into cathodes, the current in single-cathode and dual-cathode MFCs was noted as $3.24{\pm}0.06$ mA and $4.41{\pm}0.08$ mA, respectively. These values were similar to when air-saturated water was fed into the cathodes. One hundred mM nitrate as an electron acceptor in the cathode compartments did not affect an increase in current generation. However, when ferric ion was used as an electron acceptor the current increased by $6.90{\pm}0.36$ mA and $6.67{\pm}0.33$ mA, in the single-cathode and dual-cathode microbial fuel cells, respectively. These values, in single-cathode and dual-cathode microbial fuel cells, represent an increase of 67.1% and 17.6%, respectively. Furthermore, when supplied with ferric ion without air, the current was higher than that of only air-saturated water. In this study, we attempted to reveal an inexpensive and readily available electron acceptor which can replace platinum in cathodes to improve current generation by increasing the cathode reaction rate.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.297-302
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• 2014

ZnS nanowires were synthesized in order to investigate $NO_2$ gas sensing properties. They were grown on the sapphire substrate using ZnS powders. SEM (scanning electron microscopy) showed the diameter and length of the ZnS nanowires were approximately in the range of 50 - 100 nm and a few $10s\;{\mu}m$, respectively. They were also found to be composed of Wurtzite- structured single crystals from TEM (transmission electron microscopy) analysis. $NO_2$ gas sensing performance of the ZnS nanowire was measured with electrical resistance changes caused by $NO_2$ gas with a concentration of 1-5ppm. The sensor was UV treated with an intensity of $1.2mW/cm^2$ to facilitate charge carrier transfer. The responses of the ZnS nanowires to the $NO_2$ gas at room temperature, treated with UV of two different wavelengths of 365 nm and 254 nm, are measured to be 124.53 - 206.87 % and 233.97 - 554.83%, respectively. In the current work, the effect of UV treatment on the gas sensing performance of the ZnS nanowires was studied. And the underlying mechanism for the electrical resistance changes of the ZnS nanowires by $NO_2$ gas was also discussed.

• Polymer(Korea)
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• v.35 no.6
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• pp.615-618
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• 2011

Carbon nanotubes (CNTs) draw attention as promising materials due to their excellent electrical and mechanical properties. However, the intrinsic strong interaction between CNTs presents a challenge to their use in various applications. Here, we present a facile method to disperse single-walled carbon nanotubes (SWCNTs) in a polar solution using a graft copolymer, poly(vinyl chloride)-graft-poly(oxyethylene methacrylate), PVC-g-POEM. The graft copolymer was synthesized via atom transfer radical polymerization (ATRP), as confirmed by gel permeation chromatography (GPC) and $^1H$ NMR spectroscopy. The SWCNTs were uniformly dispersed in a polar solvent such as dimethylsiloxane (DMSO) using PVC-g-POEM as a dispersant, due to interaction between CNT and the graft copolymer, as revealed by transmission electron microscopy (TEM) analysis. Upon removal of the solvent, free standing nanocomposite films with good homogeneity were obtained.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.997-999
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• 1999

We fabricated white light-emitting organic electroluminescent device which have a mixed single emitting layer containing poly(N-vinylcarbazole)[PVK], tris(8-hydroxyquinoline)aluminum[Alq3] and poly(3-hexylthiophene)[P3HT] and investigated the emission properties of it. We expect to obtain a blue light from PVK, green light from Alq3 and red light from P3HT The fabricated device emits white light over 18V with slight orange light. We think that the energy transfer in a mixed layer occurred from PVK to $Alq_3$ and P3HT resulted in decreasing the blue light intensity from PVK. With mixing of N, N'-diphenyl-N, N'-(3-methylphenyl)-[1,1'-biphenyl]-4, 4'-diamine[TPD], hole transport material, to the emitting layer, the luminance intensity of device was increased 50 times than that of the device which not contain TPD. We find that the efficiency of the white light electroluminescent device can be improved by injecting electron more effectively and blue light need to improve the color purity of white light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.308-311
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• 2000

The organic electroluminescene (EL) device has gathered much interested because of its potential in materials and simple device fabrication. We fabricated EL device which have a mixed single emitting layer containing N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine [TPD] and poly(3-hexylthiophene) [P3HT]. The molar ratio between P3HT and TPD chaged with 1:1, 3:1, 5:1, 3:2 and 5:2. EL intensity of ITO/P3HT+TPD/Mg:In devices is enhanced by addition of TPD into P3HT. This can be explained that the energy transfer occurs from TPD to P3HT. Recombination probability increases in emitting layer because that TPD as hole transport material plays a role more injection hole and Mg:In (3.7eV) electrode has low work function make easily electron injection. ITO/P3HT+TPD(5:2)/Mg:In devices emit orange-red light at 28V.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.188-194
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• 2022

This work presents a non-destructive and straightforward approach to assemble a large-scale conductive electronic film made of a pre-treated single-walled carbon nanotube (SWCNT) solution. For effective electron transfer between the immobilized enzyme and SWCNT electronic film, we optimized the pre-treatment step of SWCNT with p-terphenyl-4,4"-dithiol and dithiothreitol. Glucose oxidase (GOx, a model enzyme in this study) was immobilized on the SWCNT electronic film following the positively charged polyelectrolyte layer deposition. The glucose detection was realized through effective electron transfer between the immobilized GOx and SWCNT electronic film at the negative potential value (-0.45 V vs. Ag/AgCl). The SWCNT electronic film-based glucose biosensor exhibited a sensitivity of 98 ㎂/mM·cm². In addition, the SWCNT electronic film biosensor showed the excellent selectivity (less than 4 % change) against a variety of redox-active interfering substances, such as ascorbic acid, uric acid, dopamine, and acetaminophen, by avoiding co-oxidation of the interfering substances at the negative potential value.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2453-2458
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• 2010

Photochemical studies of N-[(trimethylsilyl)alkyl]saccharins were carried out to investigate their photochemical behavior. Depending on the nature of the substrate and the solvent system employed, reactions of these substances can take place by either SET-promoted silyl migration from carbon to either the amide carbonyl or sulfonyl oxygen or by a N-S homolysis route. The results of the current studies show that an azomethine ylide, arising from a SET-promoted silyl migration pathway, is generated in photoreactions of N-[(trimethylsilyl)methyl]saccharin and this intermediate reacts to give various photoproducts depending on the conditions employed. In addition, irradiation of N-[(trimethylsily)ethyl]saccharin produces an excited state that reacts through two pathways, the relative importance is governed by solvent polarity and protic nature. Finally, photoirradiation of N-[(trimethylsilyl)propyl]saccharin in a highly polar solvent system comprised of 35% aqueous MeOH gives rise to formation of a tricyclic pyrrolizidine and saccharin that generated via competitive SET-promoted silyl transfer and $\gamma$-hydrogen abstraction pathways.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.