• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.298-301
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• 2006

DC-Motor is needed more and more sophisticated control to follow the highest precision of industrial automation and used in a number of control equipment or industrial fields. It is also useful to control single crystal($Al_2O_3$) growth. It is possible to procure a quality crystal utilizing a DC-Motor, if you mix Hydrogen and Oxygen gas properly and keep proper temperature in accordance with time process. In this paper, we will study about electrical valve positioning system for the gas mixture to improve the quality of single crystal($Al_2O_3$) growth and we will design about realtime monitoring systems of the automatic gas contol DC- Motor for single crystal($Al_2O_3$) growth

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.251-254
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• 1999

A new multi-seeding process for the growth of YBa$_2$Cu$_3$Oxx single crystals was developed. This process introduces an additional heating step to peritectic temperature and a subsequent slow cooling step to the growth temperature following the point when the crystals contacted. The crystal growth was resumed thereafter. The results obtained with this new process were compared with those of the conventional growth process, in which materials were only kept at the growth temperature. It was observed that the liquid phase between crystals were almost completely eliminated, but that Y2ll grains were grown during this new process. There was no significant improvement in trapped magnetic field over the conventional process, which is believed to be due to the cracks generated during the oxygen heat treatment or to the growth of YBa$_2$Cu$_3$Ox grains.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1308-1318
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• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.141-144
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• 2005

[ $(Y_{0.5}Sm_{0.25}Nd_{0.25})Ba_2Cu_3O_y$ ] [(YSN)-123] high $T_c$ composite superconductors with $CeO_2$ addition were systematically investigated by top seeded melt growth (TSMG) process in air atmosphere. A melt textured $NdBa_2Cu_3O_y$ (Nd-123) single crystal was used as a seed for achieving the c-axis alignment large grains perpendicular to the surface of (YSN)-123 composite oxides. The size of $(Y_{0.5}Sm_{0.25}Nd_{0.25})_2BaCuO_5$ [(YSN)211] nonsuperconducting inclusions of the melt textured (YSN)-123 samples with $CeO_2$ addition were remarkably reduced and uniformly distributed within the (YSN)123 superconducting matrix except in the region very close to the Nd-123 seed crystal. The sample showed a sharp superconducting transition of 91 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.180-183
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• 2001

$YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.36-39
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• 2024

As interest in power semiconductors is growing recently, research on device design and application using light energy gap materials such as SiC and GaN is being actively conducted. Because AlN single crystals have a larger energy gap than the above mentioned materials, research on high-power devices is also in progress, but commercialized wafers have not yet been reported, so research is needed. In this study, we applied the HVPE (Hydride vapor phase epitaxy) method to produce AlN single crystals and attempted to obtain bulk single crystals using our own manufacturing equipment. To this end, we would like to report the results of securing the growth conditions for single crystals. we would like to report on the change in the shape of the grown crystal according to the change in temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.44-55
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• 1996

Emerald (3BeO{\cdot}Al$_{2}$O_{3}{\cdot}6SiO_2 : Cr^{3+}$) single crystals were grown by flux method of $Li_2O-MoO_3 - V_2O_5$ system. The composition of starting materials were 1, 3, 5 mole ratio of $MoO_3 - V_2O_5/$Li_2O$, 20 - 15% of emerald content to flux composition and 1% of $Cr_2O_3$ colordopant to emerald composition. After mixing those were melted at $1100^{\circ}C$ in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of $3^{\circ}C$/hr from $1100^{\circ}C$ to $650^{\circ}C$, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at $1050 ~ 950^{\circ}C$, in 3 mole ratio of $V_2O_5 - MoO_3/Li_2O$ flux. Emerald single crystal growing effect and $Cr_{+3}$ ion of substitutional solid solution effect for $Al_{+3}$ ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.