• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.202-206
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• 2009

Optical images based on the porous silicon exhibiting photoluminescence have been prepared from an electrochemical etching of n-type silicon wafer (boron-doped,<100> orientation, resistivity $1{\sim}10{\Omega}-cm$) by using a beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. This provides the ability to fabricate complex optical encoding in the surface of silicon.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.27-29
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• 2004

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.11-16
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• 2013

The current solar cell industry is experiencing a temporary plateau due to a sluggish economy and oversupply. It is expected that the solar industry can see similar growth to that of the recent past by overcoming the current situation, as there is growing demand globally for solar energy. The current situation led to restructuring of the world's solar industry, and domestic firms will need to have competitiveness through strategic approaches and proprietary technology to survive in the global solar market. Crystalline and amorphous silicon based solar cells have led the solar industry and occupied half or more of the market thus far. They will do so in the future PV market as well by playing a pivotal role in the solar industry. In this paper, the current status and prospects of silicon based solar cells, from materials to comprehensive and high efficiency technology that can emerge in the future, are discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.362-369
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• 2011

In this paper, optimal deep reactive ion etching (DRIE) process conditions for fused quartz were experimentally determined by Taguchi method, and fused quartz-based micro cantilevers were fabricated. In addition, comparative study on Q-factors of fused quartz and silicon micro cantilevers was performed. Using a silicon layer as an etch mask for fused quartz DRIE process, different 9 flow rate conditions of $C_4F_8$, $O_2$ and He gases were tested and the optimum combination of these factors was estimated. Micro cantilevers based on fused quartz were fabricated from this optimal DRIE condition. Through conventional silicon DRIE process, single-crystalline silicon micro cantilevers whose dimensions were similar to those of quartz cantilevers were also fabricated. Mechanical Q-factors were calculated to compare intrinsic damping properties of those two materials. Resonant frequencies and Q-factors were measured for the cantilevers having fixed widths and thicknesses and different lengths. The Q-factors were in a range of 64,000 - 108,000 for fused quartz cantilevers and 31,000 - 35,000 for silicon cantilevers. The experimental results supported that fused quartz had a good intrinsic damping property compared to that of single crystalline silicon.

• ETRI Journal
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• v.31 no.6
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.165-169
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• 2004

This paper reports a miniaturized conductor-backed CPW (CBCPW) bandpass filter based on a thin film polyimide layer coated on CMOS-grade silicon. With a 20 ${\mu}{\textrm}{m}$-thick polyimide interface layer and back metallization on the CMOS-grade silicon, the interaction of electromagnetic fields with the lossy silicon substrate has been isolated, and as a result a low-loss and low-dispersive CBCPW line has been obtained. Measured attenuation constant at 20 GHz is below 1.2 ㏈/cm, which is compatible with the CPW on GaAs. In addition, by using the proposed CBCPW geometry, miniaturized BPF for Ku band application is designed and its measured frequency response shows excellent agreement with the predicted value with validating the performances of the proposed CBCPW geometry for RFIC interconnects and filter applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.8
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• pp.733-738
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• 2009

Mechanical properties of <001> silicon nanowires are presented. In particular, predictions from the calculations based on different length scales, first principles calculations, atomistic calculations, and continuum nanomechanical theory, are compared for <001> silicon nanowires. There are several elements that determine the mechanics of silicon nanowires, and the complicated balance between these elements is studied. Specifically, the role of the increasing surface effects and reduced dimensionality predicted from theories of different length scales are compared. As a prototype, a Tersoff-based empirical potential has been used to study the mechanical properties of silicon nanowires including the Young's modulus. The results significantly deviates from the first principles predictions as the size of wire is decreased.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.257-264
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• 2023

To develop a high capacity lithium secondary battery, a new approach to anode material synthesis is required, capable of producing an anode that exceeds the energy density limit of a carbon-based anode. This research synthesized carbon nano silicon composites as an anode material for a secondary battery using the RF thermal plasma method, which is an ecofriendly dry synthesis method. Prior to material synthesis, a silicon raw material was mixed at 10, 20, 30, 40, and 50 wt% based on the carbon raw material in a powder form, and the temperature change inside the reaction field depending on the applied plasma power was calculated. Information about the materials in the synthesized carbon nano silicon composites were confirmed through XRD analysis, showing carbon (86.7~52.6 %), silicon (7.2~36.2 %), and silicon carbide (6.1~11.2 %). Through FE-SEM analysis, it was confirmed that the silicon bonded to carbon was distributed at sizes of 100 nm or less. The bonding shape of the silicon nano particles bonded to carbon was observed through TEM analysis. The initial electrochemical charging/discharging test for the 40 wt% silicon mixture showed excellent electrical characteristics of 1,517 mAh/g (91.9 %) and an irreversible capacity of 133 mAh/g (8.1 %).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.268-271
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• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.389-393
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• 2003

This paper presents circuit modeling and characterization of silicon-based on-chip integrated inductors in Giga Hertz range for wireless communication products. We compare several different designs of on-chip inductors for self-resonant frequency and quality factor. The measurement data could be used as a design guide for manufacturing practical spiral inductors for wireless applications. We provide the equivalent inductor circuit parameters from the actual measurement data.