• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.791-794
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.842-845
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• 한국주조공학회지
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• 제15권6호
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• pp.558-565
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• 1995

Effects of high Si-P addition on microstructure and mechanical properties of thin ductile cast iron have been investigated. The amount of silicon addition have fixed on 4.0wt% and the amounts of phosphorus addition and thickness of specimen have been varied from 0.05 to 0.8wt% and ${\phi}13mm$, ${\phi}10mm$ and ${\phi}6mm$, respectively. As the casting thickness decreased, the average diameter of spheroidal graphite was decreased and the hardness of the cast iron increased. By adding P, the average diameter of spheroidal graphite was increased and the count of the spheroidal graphite was decreased continuously. And the tensile strength and the elongation was decreased, and the hardness was increased. With the P added more than 0.2wt%, the abraded amount was decreased significantly. The addition of P improved the wear resistance and the hardness of thin ductile cast iron.

• 전자공학회논문지A
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• 제33A권6호
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Journal of Magnetics
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• 제6권1호
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• pp.1-4
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• 2001

We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.

• 전자공학회논문지A
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• 제32A권5호
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• pp.54-59
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• 1995

We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.46-48
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• 2015

Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect of annealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibited saturation mobility of $1.37cm^2$/Vs, a threshold voltage of -7.2 V, and an on-off ratio of $1.1{\times}10^5$.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.365.2-365.2
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• 2014

Nickel sulfide (NiS) has been utilized in optoelectronic applications, such as transformation-toughening agent for materials used in semiconductor applications, catalysts, and cathodic materials in rechargeable lithium batteries. Recently, high quality nickel sulfide thin films have been explored using ALD/CVD technique. Suitable precursors are needed to deposit thin films of inorganic materials. However, nickel sulfide precursors available for ALD/CVD process are very limited to nickel complexes with dithiocarbamate and alkanethiolate ligands. Therefore, it is essential to prepare novel nickel sulfide suitable for ALD/CVD precesses. Herein we report on the synthesis and characterization of new nickel sulfide complex with designed aminothiolate ligand. Furthermore thin films of NiS have been prepared on silicon oxide substrates by spin coating nickel precursor 10 wt% in THF. The novel complex has been characterized by means of 1H-NMR, elemental analysis, thermogravimetric analysis (TGA), X-ray Diffraction (XRD) and scanning electron microscope (SEM).