Synthesis and Characterization of New Nickel Sulfide Precursor

Nickel sulfide (NiS) has been utilized in optoelectronic applications, such as transformation-toughening agent for materials used in semiconductor applications, catalysts, and cathodic materials in rechargeable lithium batteries. Recently, high quality nickel sulfide thin films have been explored using ALD/CVD technique. Suitable precursors are needed to deposit thin films of inorganic materials. However, nickel sulfide precursors available for ALD/CVD process are very limited to nickel complexes with dithiocarbamate and alkanethiolate ligands. Therefore, it is essential to prepare novel nickel sulfide suitable for ALD/CVD precesses. Herein we report on the synthesis and characterization of new nickel sulfide complex with designed aminothiolate ligand. Furthermore thin films of NiS have been prepared on silicon oxide substrates by spin coating nickel precursor 10 wt% in THF. The novel complex has been characterized by means of 1H-NMR, elemental analysis, thermogravimetric analysis (TGA), X-ray Diffraction (XRD) and scanning electron microscope (SEM).