• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.480-480
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• 2011

양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Macromolecular Research
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• v.15 no.7
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• pp.688-692
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• 2007

The hydrogen-bonding induced alternating multilayer thin films of dendrimers and block copolymer micelles were demonstrated. The block copolymer micelles derived from amphiphilic poly(2-ethyl-2-oxazoline)block-$poly({\varepsilon}-carprolactone)$ (PEtOz-PCL) in aqueous phase have a core-shell structure with a mean hydrodynamic diameter of 26 nm. The hydrogen bonding between the PEtOz outer shell of micelle and the carboxyl unit of poly(amidoamine) dendrimer of generation 4.5 (PAMAM-4.5G) at pH 3 was utilized as a driving force for the layerby-layer alternating deposition. The multilayer thin film was fabricated on the poly(methyl methacrylate) (PMMA) thin film spin-coated on silicon wafer or glass substrate by the alternate dipping of PEtOz-PCL micelles and PAMAM dendrimers in aqueous solution at pH 3. The formation of multilayer thin film was characterized by using ellipsometry, UV-vis spectroscopy, and atomic force microscopy. The PEtOz outer shell of PEtOz-PCL micelle provided the pH-responsive hydrogen bonding sites with peripheral carboxylic acids of PAM AM dendrimer. The multilayer thin film was reversibly removed after dipping in aqueous solution at $pH{\geq}5.6$ due to dissociation of the hydrogen bonding between PEtOz shell of PEtOz-PCL micelle and peripheral carboxyl units of PAMAM dendrimer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.631-631
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• 2013

Battery has major drawbacks including its size and life expectancy, and environmental problem. As an alternative, energy harvesting is emerging as a potential solution to replace battery along with more energy-efficient IT devices. The idea of harnessing energy from our living environment is sustainable, semi-permanent, and eco-friendly. Also, unlike battery, energy harvester does not require much space to store energy. Therefore, energy harvesting can provide a better source of power for small, portable, and wireless devices. Among various ways of harvesting energy from our surroundings, triboelectricity is chosen due to its potential to be miniaturized, and efficient. Triboelectric effect occurs as two different materials with different polarity of charge separation come into contact through friction, and then become separated so that electric potential difference is achieved. In this research, such characteristic of triboelectricity is used as a way to convert ambient mechanical energy into electric energy.Series of recent researches have shown promising results that the triboelectric energy harvester can be simple and cost effective. However, sufficient electricity level required to operate mobile devices has not yet been achieved.In this research, our group focuses on the design and optimization of triboelectric energy harvesting device to enhance its output. By using maskless lithography to pattern Kapton film and silicon substrate, which is used as a mold for PDMS thin layer, and sputtering metal electrodes on each side, we fabricate and demonstrate different designs of triboelectric energy harvester that utilizes the contact electrification between a polymer thin film and a metal thin foil. In order to achieve optimized result, the output voltage and current are measured under diverse conditions, which include different surface structure and pattern, material, and the gap between layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.161-165
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• 2007

In this paper, mesoporous Pt on micro pillars Pt electrode is newly designed, fabricated, and characterized on silicon substrate for non-enzymatic electrochemical sensor micro-chip integrated with CMOS readout circuitry. The fabricated micro/nano Pt electrode has cylindrical hexangular arrayed nano Pt pores with a diameter of 3.2 nm which is formed on top of the micro pillars Pt electrode with approximately $6{\mu}m$ in diameter, $6{\mu}m$ in space, and $50{\mu}m$ in height. The measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $9.9nA/mm^2,\;6.72{\mu}A/mm^2,\;and\;7.67{\mu}A/mm^2$ in 10mM glucose solution with 0.1M phosphate buffered saline (PBS) solution, respectively. In addition, the measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $0.15{\mu}A/mm^2,\;0.56{\mu}A/mm^2,\;and\;0.74{\mu}A/mm^2$ in 0.1mM ascorbic acid (AA) solution with 0.1M phosphate buffered saline (PBS) solution, respectively. This experimental results show that the proposed micro/nano Pt electrode is highly sensitive and promising for CMOS integrated non-enzymatic electrochemical sensor applications. Since the micro-pillar Pt electrode can also be utilized with a micro-fluidic mixer in the sensor chip, the sensor chip can be much smaller, cheaper, and easier to be fabricated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.262-271
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• 2011

In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.256-259
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• 2006

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.9
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• pp.1015-1020
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• 2011

Nanoimprint lithography has been actively investigated. This method can replicate a nanopatterned master stamp onto a thin polymer film on a silicon substrate and so on. In this study, a square-shaped hollow piezoelectric actuator is presented, which is newly developed. This actuator is used for driving a nanoscale stamp in nanoimprint lithography instead of a conventional electric motor. The fabricated prototype actuator has 95 layers and side lengths of 23 mm and 18 mm for the outer and inner squares, respectively. By adopting a novel process instead of the conventional forming process for fabricating a one-layer actuator, the one-layer is composed of four rectangular segments produced by sawing a ceramic film with a thickness of 0.3 mm. The basic characteristics on displacement and generation force of the fabricated prototype actuator are experimentally investigated. Furthermore, the displacement characteristics obtained by using a PI controller are tested and discussed.

• Journal of Convergence for Information Technology
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• v.10 no.8
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• pp.137-143
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• 2020

This study examined the effects of rapid thermal annealing (RTA) on the physical and chemical characteristics of thin silver (Ag) layers on SiO2 coated metal foils. Ag layers were annealed at various temperatures of the range between 150 ℃ and 550 ℃ for 20 min. The surface roughness and resistivity are increased at the annealing temperatures of 550 ℃. We also found that oxygen (O) and silicon (Si) atoms exist at the Ag film surface by using compositional analysis in the annealing temperatures of 550 ℃. The total reflectance is decreased with increasing temperature. These phenomena are due to an out-diffusion of Si atoms from SiO2 layers during the RTA annealing. The results offer the possibility of using it as a substrate for various flexible optoelectronic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.11-19
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• 2003

A micro sensor array with 4 discrete sensors integrated on a microhotplate was developed for identifying the kinds and quantities of explosive gases. The sensor array consisited of four tin oxide-based thin films with the high and broad sensitivity to the tested explosive gases and uniform thermal distribution on the plate. The microhotplate, using silicon substrate with N/O/N membrane, dangling in air by Al bonding wires, and controlling the thickness by chemical mechanical process (CMP), has been designed and fabricated. By employing the sensitivity signal of the sensor array at 40$0^{\circ}C$, we could reliably classily the kinds and quantities of the explosive gases like butan, propane, LPG, and carbon monoxide within the range of threshold limit values (TLVs), employing principal component analysis (PCA).