• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.639-647
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• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• Resources Recycling
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• v.16 no.1 s.75
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• pp.59-67
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• 2007

Recovery of acids from the waste etching solution of containing acetic, nitric and hydrofluoric acid discharged from silicon wafer manufacturing process has been attempted by using solvent extraction method. EHA(2-Ethylhexlalcohol) for acetic acid and TBP(Tri-butly Phosphate) for nitric and hydrofluoric acid as a extraction agent was used to the experiment to obtain the process design data in separation procedure. From the experimental data and McCabe-Thiele diagram analysis, we obtained the optimum conditions of phase ratio(O/A) and stages to separate each acid sequently from the mixed acids. The recovery yield was obtained above 90% for acetic acid from the acid mixtures, 90% for nitric acid from acetic acid extraction raffinate and then above 67% for hydrofluoric acid from final extraction raffinate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.575-580
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• 2001

In this paper, using $500\mum-thickness\; (100)\; silicon\; wafer,\; flat\; 65\mum-thickness$ silicon mirror plates were fabricated through dry etching and wet etching, and $45\mum-depth$ grooved driving electrodes were fabricated through UV-LIGA process. Four shapes of the driving electrode were fabricated: twenty four grooves of the $50\mum-width$, twelve grooves of the $100\mum-width$, six grooves of the $200\mum-width$, and no grooves on the driving electrode. Fabricated mirror plate size and spring size are $2400\times2400\times65\mum3\; and \;500\times10\times65\mum3,$ respectively. Mirror plate parts and driving electrodes were assembled into the scanning mirrors. Measured natural resonance frequencies were about 600Hz which have error within $\pm 2%$ to calculated value. Due to the squeeze effect in the narrow gap between the mirror plate and the driving electrode, measured resonance frequencies were reduced as raising the amplitude of the mirror plate. In a case of driving electrode without grooves, the resonance frequency was reduced largely, compared with a case of driving electrode with grooves. According to the experimental results, squeeze effect was smaller in the driving electrode with smaller-width and many grooves. Therefore, the driving electrode with smaller-width and many grooves was effective in low voltage and high speed operation.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.214-220
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• 1991

The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.