• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2230-2236
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• 2012

Currently, the AC-to-DC power conversion system using diode rectifiers is mainly used in large vessels. Also, to reduce the total harmonic distortion(THD) of current and voltage, this system requires an additional phase-shifting transformer which can be powered multi-pulses. In this case, due to the installation of the transformer, the spatial or economic loss occurs. This paper presents a novel active rectification scheme using silicon controlled rectifier(SCR) or insulated gate bipolar transistor(IGBT) devices on behalf of the diode rectifiers which are currently operating in large vessels such as LNG Carrier(LNGC). The proposed system can use the low voltage source and reduce current and voltage harmonics generated by nonlinear loads connected to the power distribution bus and save economic costs by removing the phase-shifting transformers which are used in conventional system. Computer simulations are performed under the electric propulsion system which is operating in current large vessel. The results are shown in support of the improvement of THD included in the current and voltage wave forms of propulsion motor.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• 전기의세계
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• v.18 no.4
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• pp.22-30
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• 1969

The development of the frequency convertors using semiconductors devices makes it possible to control the speed of A.C. motors easily. It is now economically feasible to provide them with power at adjustble frequency using silicon-controlled rectifier (or thyristor) inverters. In such a case, in order to operate an induction motor efficiently over a wide speed range, it must be supplied from a variable frecuency source of which frequency is adjustable over the speep range of the motor. It is desired to observe the changes in characteristics as primary current, torque-speed of induction moter etc. at any optional frequncy. Although the charactheristies can be obtained by means of the conventional methods they require very complicated precedures of calcuations. The Current Diagram Method in this paper suggests a new approach to simpler calcuations of the characteristics, using the motor constants at reference frequency. The conclusions of this study are summarized as follows: (1) The equations of stator current at adjusted frequency were derived to construct graphical chart and the current circle required for the Current Diagrm Method. (2) The radius, center of the current circle and the vector locus, the basis for calculating the characteristics, at any desired frequency could be easily determined with the aid of both the derived graphical chart and current circle at reference frequency. (3) The method was shown to be applicable to the various types of 3-phase induction motors and also dealt with its application to the split-phase, condenser motors.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.169-176
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• 2017

This paper presents research on low-voltage microgrids to maintain a continuous power supply to critical loads on grid-connected islands in Korea. The low-voltage microgrids of this paper focused on that changes public office buildings into uninterrupted microgrids by autonomous operation. For this, a microgrid controller (MGC) and a power conditioning system (PCS) that allow a seamless transfer between grid-connected and grid-isolated operation are proposed. The proposed PCS operates with a silicon controlled rectifier (SCR) switch and employs a simple structure. It supplies power continuously without operators through a coordinated operation between MGC and PCS. In addition, proposed MG has a schedule operation for minimizing electricity charges and provides ancillary services that enable the utilization of resources according to the operation purpose of utility distribution networks. To demonstrate the uninterrupted low-voltage microgrid proposed in this study, a microgrid was implemented and tested in a public office building in Anjwa Island, Jeollanam-do in Korea. A seamless, autonomous operation history, despite system disturbances, was obtained through a long-term demonstration of operation. The results showed that the proposed microgrid technology can be used to achieve energy resilience in grid-connected island areas.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.27-32
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• 2016

A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.

• 전기의세계
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• v.17 no.3
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• pp.29-38
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• 1968

The development of the frequency converter using semiconductor enables to easily control the speed of A.C. motors. It is now technically possible and economically feasible to provide them with power at variable frequency, using silicon-controlled-rectifier (or thyristor) inverters. In such a case, if an induction motor is to be operated efficiently over a wide speed range, it must be supplied from a variable-frequency source whose frequency is adjustable over a range similar to that required for the motor speed. It is desired to observe how several characteristics are changed such as primary current, torque-speed, etc. Although the characteristics could be obtained by means of the conventional method, it requires very complicated calculation. It is assumed that the charateristics above are easily investigated by means of current diagram method from variable circuit constants relating to the motor which is designed in rated frequency. In this paper, the results of the study on the current-diagram method and its application are described as follows; (1) In order to discuss the construction of current diagram, the equation of the stator current with adjustable frequency was derived for applying the Current Diagram Method. (2) The radius, the center of the current circle and current vector locus at any desired frequency could be easily determined with the aid of both above mentioned equation and the standard current diagram at reference frequency. (3) This method could be applicable to the various types of Induction Motors, and this paper has dealt with its application to the capacitor, split-phase and 2-phase types of motors.

• ETRI Journal
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• v.38 no.2
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1743-1747
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• 2012

The research of superconducting fault current limiter (SFCL) for reduction of the fault current is actively underway in the worldwide. In this paper, we analyzed the characteristics of a SFCL using the transformer and superconducting elements combined mutually in accordance with the fault types. The structure of this SFCL was composed of the secondary and third windings of a transformer connected to the load and the superconducting element, respectively. The provided electric power flew into the load connected to the secondary winding of the transformer in normal state. On the other hand, when the fault occurred in power system, the fault current was limited by closing the line of third winding of the transformer. At this time, the effect of the fault was minimized by opening the fault line in secondary winding of a transformer in power system. The sensing of the fault state was performed by the current transformer(CT) and then turn-on and turn-off switching behavior of the secondary line in the transformer was performed by the silicon-controlled rectifier(SCR). As a result, the proposed SFCL limited the fault current within one-cycle efficiently. Also, the degradation of the superconducting element in the normal state was avoided.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.18-20
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• 2016

The study of superconducting fault current limiter (SFCL) is continuously being studied as a countermeasure for reducing fault-current in the power system. When the fault occurred in the power system, the fault-current was limited by the generated impedance of SFCLs. The operational characteristics of the flux-offset type SFCL according to turn ratios between the primary and the secondary winding of a reactor were compared in this study. We connected the secondary core to a superconductor and a SCR switch in series in the suggested structure. The fault current in the primary and the secondary winding of the reactor and the voltage of the superconductor on the secondary were measured and compared. The results showed that the fault current in the load line was the lowest and the voltage applied at both ends of the superconductor was also low when the secondary winding of the reactor had lower turn ratio than the primary. It was confirmed based on these results that the turn ratio of the secondary winding of the reactor must be designed to be lower than that of the primary winding to reduce the burden of the superconductor and to lower the fault current. Also, the suggested structure could increase the duration of the limited current by limiting the continuous current after the first half cycle from the fault with the fault current limiter.