• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.260-262
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.168-171
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\MU}m$ thickness on p+ seeding layer. The cells with p+ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is $12.95\%$, with Voc=633mV, $Jsc=26.5mA/cm^2,\;FF=77.15\%$. The $P^+$ seeding layer of the cell is $20{\mu}m$, thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.753-764
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• 2015

Among several types of energy saving smart window technologies, the leader, the dynamic EC (electrochromic) window one needs integrated PV (photovoltaics), to minimize expensive electrical wiring as well as to obviate the need for external energy. Self-powered smart windows were reviewed according to PV types used. DSSCs (dye sensitized solar cells) were found to be compatible with EC cells, to have several categories of next generation smart windows such as PECCs (photoelectrochromic cells), PVCCs (photovoltachromic cells), EC polymer PECCs. In addition silicon solar cells and third generation solar cells were investigated. They are summarized in a table showing their advantages and disadvantages respectively for a fast comparison. The strategy to expedite the commercialization of these next generation smart windows includes developing retrofit smart window coverings for use on flexible polymer substrates adhered to the inside surface of a window and easily replaced after use for upto 10 years.

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.28-28
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.699-704
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• 2017

The amount of electric power for photovoltaic power generation depends on the location of the power plant and the direction of solar cell. The solar cell controls the generation of solar power plants. Therefore, the structure of solar cell, manufacturing method, and optic technology were factors contributing to increased solar cell efficiency; however, the technical limit has been reached. Herein, we propose a new method to increase the solar cell efficiency using a wavelength conversion technology that converts ultraviolet and infrared rays, which are not effectively used in solar cells, into effective wavelength of solar cell. We used fluoride $Na(Ca)YF_4$ phosphor for wavelength conversion. Then, a wavelength-conversion fluorescent paste, prepared using an organic-silicon binder, was used to prepare a film that was applied to Si solar cells. It was confirmed that conversion efficiency improved by 5% or more.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.36-36
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• 2010

Currently, there are several newly developed energy resources for the future to replace petroleum resources such as hydrogen fuel cell, solar cell, wind power, and etc. Among them, solar cell has attracted a worldwide concern, because it has an enormous amount of resources. In general, a study of solar cells can be classified in to an area of bulk type and thin-film type. Inorganic solar cells based on silicon have been tremendously developed in technology and efficiency. However, since there are many lithographic steps, high processing temperature approximately $1000^{\circ}C$, and expensive raw materials, a manufacturing cost of device are nearly reaching a limit. Contrary to those disadvantages, organic solar cells can be manufactured at room temperature. Also, it has many advantages such as a low cost, easy fabrication of thin film, and possible manufacture to a large size. Because it can be made to be flexible, research and development on solar cells are actively in progress for the next generation. ever though an efficiency of the organic solar cell is low compared to that of inorganic one, a continuous study is needed. In this paper, we report optimal device structure obtained by a program simulation for design and development of highly efficient organic photovoltaic cells. we have also compared simulated results to experimental ones.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.116-122
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• 2013

For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).