• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.9
• /
• pp.378-382
• /
• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.391-394
• /
• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.82-86
• /
• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Korean Journal of Materials Research
• /
• v.12 no.5
• /
• pp.327-333
• /
• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Journal of Industrial and Engineering Chemistry
• /
• v.67
• /
• pp.417-428
• /
• 2018

In this study, we fabricated hierarchically self-assembled thin films composed of graphene oxide (GO) sheets and gold nanoparticles (Au NPs) using the Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques and investigated their gas-sensing performance. First, a thermally oxidized silicon wafer ($Si/SiO_2$) was hydrophobized by depositing the LB films of cadmium arachidate. Thin films of ligand-capped Au NPs and GO sheets of the appropriate size were then sequentially transferred onto the hydrophobic silicon wafer using the LB and the LS techniques, respectively. Several different films were prepared by varying the ligand type, film composition, and surface pressure of the spread monolayer at the air/water interface. Their structures were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and their gas-sensing performance for $NH_3$ and $CO_2$ was assessed. The thin films of dodecanethiol-capped Au NPs and medium-sized GO sheets had a better hierarchical structure with higher uniformity and exhibited better gas-sensing performance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.198.1-198.1
• /
• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Proceedings of the Membrane Society of Korea Conference
• /
• 1996.06a
• /
• pp.121-147
• /
• 1996

Since 1980, the water quality of ultra-pure water has been rapidly improved, and presently ultra-pore water producing equipment for 64Mbit is in operation. Table 1 shows the degree of integration of DRM and required water quality exlmple. The requirements of the ultra-pure water for 64Mbit are resistivity: 18.2 MQ/cm or higher, number of particulates: 1 pc/ml or less (0.05 $\mu$m or larger). bacteria count: 0.1 pc/l or less. TOC (Total Organic Carbon, index of organic snbstance) : 1ppb or less, dissolved oxygen: 5ppb or less, silica: 0.5ppb or less, heavy metal ions: 5ppb or less. The effect of metals on the silicon wafer has been well known, and recently it has been reported that the existence of organic substance in ultra-pure water is closely related to the device defect, drawing attention. It is reported that if organic substance sticks to the natural oxidation film, the oxide film remaims on the organic substance attachment in the hydrofluoric acid treatment (removal of natural oxidation film). The organic substance forms film on the silicon wafer, and harmful elements such as metals and N.P.S., components contained in the organic substance and the bad effect due to the generatinn of silicon carbide cannot be forgotten. In order to remove various impurities in raw water, many technological develoments (membrane, ion exchange, TOC removal, piping material, microanalysis, etc.) have been made with ultra-pure water producing equipment and put to practical use. In this paper, technologies put to practical use in recent ultra-pure vater producing equimeut are introduced.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.242-242
• /
• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• Applied Chemistry for Engineering
• /
• v.19 no.2
• /
• pp.236-241
• /
• 2008

The possibility of silicon oxidation through the aerial-diffusion of active oxygen species has been evaluated. The species originate from the surface of $TiO_2$ exposed by UV. Among process parameters such as UV intensity, substrate temperature and chamber pressure with oxygen, UV intensity was a major parameter to the influence on the oxide growth rate. When 1 kW high pressure Hg lamp was used as a UV source, the growth rate of silicon oxide was 8 times as faster as that of a 60 W BLB lamp. However, as the chamber pressure increased, the growth rate was declined due to the suppression of aerial diffusion of active oxygen species. According to the results, it could be confirmed that the aerial-diffusion of active oxygen species from UV-irradiated photocatalytic surface can be applied to a new method for preparing an ultra-thin silicon oxide at the range of relatively low temperature.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.54-58
• /
• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.