• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.23-28
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• 1999

Au fine particles dispersed $TiO_{2}$ film was prepared on silica glass substrate by sol-gel dipping and firing process. The $TiO_{2}$ films were fabricated from the system of titanium tetraisopropoxide-EtOH-HCl-$H_{2}O$-hydrogen tetrachloroaurat (III) tetrahydrate. The conditions for the formation of clear solution and dissolving high concentration of Au compound were examined. Photoreduction process was adopted to control the size of gold metal particles. Phase evolution of matrix $TiO_{2}$ and variation of Au particle with UV irradiation were investigated by XRD, SEM, TEM and UV-visible spectrophotometer. The effect of CPCl (Cetylpyridinium chloride monohydrate) as a dispersion agent was evaluated.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.1
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• pp.17-22
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• 2007

Metal-doped $TiO_2$ thin films were prepared on soda-lime-silica glass substrates by using a spin coating-pyrolysis process. As-deposited films were prefired at $500^{\circ}C$ or 10 min in air. Five-coated films were finally annealed at $600^{\circ}C$ for 30 min in air. High resolution X-ray diffraction, field emission scanning electron microscope and UV spectrophotometer were used to analyze film's property. The largest red shift in optical energy gap is obtained in the Fe-doped $TiO_2$ film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.315-323
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• 1998

$TiO_2$films of rutile and anatase phase have been prepared on silica glass substrates by the sol-gel method using $Ti(i-OC_3H_7)_4$. The effect of additives on the polymorph of $TiO_2$film has been examined in view of degree of crystallization. Third-order nonlinear optical properties of the both film have been investigated by the third harmonic generation method. The measured 3rd order nonlinear optical susceptibility of rutile and anatase thin films were about $1.4{\times}10^{-12}$ and $9.7{\times}10^{-13}$ esu, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.731-734
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.385-392
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• 2001

There have been many investigations and researches on PLC type of optical amplifiers because they are convenient for mass production and also can integrate multi-functional devices into a single chip. In this research. the fabrication of optical waveguide made of Si/$Sio_2$ by FHD(Flame Hydrolysis Deposition) for passive integrated optical devices and $1.5\mu\textrm{m}$ optical amplifier by Solution Doping method, which is one of the method doping $Er^{3+}$ into the thin film, are mainly discussed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.12
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• pp.668-673
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• 2013

In this study, specimens with nano-sized porous thin films were manufactured by injecting fluorescence solution into the pores. We intended to find out the difference of the fluorescence intensity in each region of the specimen through an experimental apparatus that makes a temperature field. Before conducting experiments, the optimized manufacturing conditions were determined by analysis of all parameters that influence the emission intensity, and the experiments were carried out with the specimens produced in the optimized conditions. Then, the calibration curves of the fluorescence intensity versus temperature were performed by taking the intensity distributions from the specimen in various temperature fields. The surfaces of specimens were coated with Rhodamine-B (Rh-B) fluorescent dye and measured based on the fluorescence intensity. Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescence dye was absorbed into these porous thin films.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.94-99
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• 2002

The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.