• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.87-88
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• 2006

To investigate the possibility of ceria abrasive-added slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, two kinds of retreated methods were introduced as follows: First, the characteristics of mixed abrasive slurry (MAS) using $CeO_2$ powder as an abrasive added within diluted silica slurry (DSS) were evaluated to achieve the improvement of removal rates and non-uniformity. Second, the control of pH level due to the dilution of slurry was examined. And then, we have discussed the CMP characteristics as a function of abrasive dispersion time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.1-4
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• 2003

The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.542-548
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• 2012

The viscosity of a ceramic slurry depends on the slurry concentration, particle shape and size, hydrodynamic interactions, temperature, shear rate, pre-treatment condition and the method of measurement with the selected equipment. Representative ceramic slurries with low to high viscosity levels are selected from colloidal silica, barium titanate slurry and glass frit paste. Rotational rheometers and vibrational viscometers are used to compare the measured viscosity for various ceramic slurries. The rotational rheometer measured the viscosity according to the change of the shear rate or the rotational speed. On the other hand, the vibrational viscometer measured one point of the viscosity in a fixed vibrational mode. The rotational rheometer allows the measurement of the viscosity of a ceramic paste with a viscosity higher than 100,000 cP, while the vibrational viscometer provides an easy and quick method to measure the viscosity without deformation of the ceramic slurry due to the measurement method. It is necessary to select suitable equipment with which to measure the viscosity depending on the purpose of the measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.35-37
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• 2005

100, 200nm 크기의 colloidal silica 각각에 나노 ceria 입자를 수열합성법으로 코팅하였다. Colloidal silica 입자에 ceria를 코팅 시 slurry의 pH조절과 수열처리에 이용하여 silica에 ceria가 코팅됨을 TEM과 zeta-potential을 이용하여 확인하였다. 연마 슬러리의 분산 안정성과 연마효율을 높이기 위하여 슬러리의 pH 는 9로 하였으며, 이때의 zeta-potential 값은 -25 mV이었다. 1 wt%로 제조된 연마슬러리를 이용하여, 4 inch $SiO_2$, $Si_3N_4$ wafer를 압력변화에 따른 연마특성을 관찰 하였다. Ceria coated colloidal silica 100 nm, 200 nm와 commercial한 $CeO_2$입자를 연마압력 6 psi로 oxide film을 연마한 결과 연마율이 각각 2490 ${\AA}/min$, 4200 ${\AA}/min$, 4300 ${\AA}/min$으로 측정되었다. 또한 $SiO_2$, $Si_3N_4$ film의 6 psi압력에서 ceria coated colloidal silica 100 nm, 200 nm와 commercial 한 $CeO_2$입자의 선택비는 3, 3.8, 6.7 이었다. 입자크기가 클수록 연마율이 높으며, Preston equation을 따라 연마 압력과 연마율이 비례하였다.

• Journal of the Korea Organic Resources Recycling Association
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• v.30 no.3
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• pp.5-12
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• 2022

This study suggests the effective recycling method of sludge waste from various industrial fields to synthesize uniform colloidal silica nanoparticles. In detail, polymers are removed from the sludge waste to attain sludge-extracted silica (s-SiO₂) micron-sized particles, and ammonia assisted sonication is applied to s-SiO₂, which has effectively extracted the silanol precursor. The nano-sized silica (n-SiO₂) particles are successfully synthesized by a typical sol-gel method using silanol precursor. Also, the yield amounts of n-SiO₂ are determined by the function of s-SiO₂ etching time. Finally, n-SiO₂-based slurry is synthesized for the practical CMP application. As a result, rough-surfaced semiconductor chip is successfully polished by the n-SiO₂-based slurry to exhibit the mirror-like clean surface. In this regard, sludge wastes are successfully prepared as valuable semicondutor grade materials.