• Title/Summary/Keyword: Signal Collector

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Research of an On-Line Measurement Method for High-power IGBT Collector Current

  • Hu, Liangdeng;Sun, Chi;Zhao, Zhihua
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.362-373
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    • 2016
  • The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (uEe) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

A Wireless ECG Measurement System based on the Zigbee USN (Zigbee USN 기반의 무선 ECG 측정 시스템)

  • Chang, Yun-Seok;Kim, Bo-Yeon
    • The KIPS Transactions:PartC
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    • v.18C no.3
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    • pp.195-198
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    • 2011
  • Recent expansion of the ubiquitous environment and improvement of the USN give lots of U-healthcare systems. In this paper, we design and implement a wireless ECG measurement system that can send ECG signals among the sensors and collector. It can also give almost the same precision as a hospital ECG system with mobility. The most important fact of the mobile ECG system is the signal data connectivity among the sensors and device such as signal cables or wires. we can eliminate the signal cable through the Zigbee sender and collector via implementing Zigbee-SD communication system that can receive the ECG signal data. We also implement ECG app software on the smart phone that can analyze and show the data results directly. It can give lots of mobility and usability under ubiquitous environment and would be a very efficient wireless ECG system for U-healthcare service.

Fabrication and characteristics of AlGaAs/GaAs SABM HBTs (AlgaAs/GaAs SABM HBT의 제작 및 특성)

  • 이준우;김영식;서아람;서영석;신진호;김범만
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.129-137
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    • 1995
  • AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

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An Imrpoved Gate Control Scheme for Overvoltage Clamping under IGBT Series Connection (IGBT 직렬 연결시 과전압 제한을 위한 게이트 구동기법)

  • Kim, Wan-Jong;Choe, Chang-Ho;Hyeon, Dong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.48 no.2
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    • pp.83-88
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    • 1999
  • Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

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Development of HVPS of the X-Band TWTA for Military Transportable Satellite Communications (군위성통신 차량용단말 X-대역 TWTA용 HVPS 개발)

  • Park, Jae-Don;Jang, Jeen-Sang;Dong, Moon-Ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.12A
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    • pp.1168-1173
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    • 2005
  • The HVPS of the TWTA for military satellite communications is developed and tested. With 380 V input DC voltage, the HVPS provides -10.95 kV for Cathode, -4.27 kV for Collectorl and -6.57 kV for Collector2 of the TWT that generates 600 W X-band output signal power. The total output power of the HVPS is about 1.6 kW. The voltage ripples of Cathode, Collectorl and Collector2 are 6 V, 12 V and 6 V, respectively, which are only $0.055\%,\;0.281\%$ and $0.091\%$ compared to the absolute output voltages.

Acoustic Signal-Based Tunnel Incident Detection System (음향신호 기반 터널 돌발상황 검지시스템)

  • Jang, Jinhwan
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.18 no.5
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    • pp.112-125
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    • 2019
  • An acoustic signal-based, tunnel-incident detection system was developed and evaluated. The system was comprised of three components: algorithm, acoustic signal collector, and server system. The algorithm, which was based on nonnegative tensor factorization and a hidden Markov model, processes the acoustic signals to attenuate noise and detect incident-related signals. The acoustic signal collector gathers the tunnel sounds, digitalizes them, and transmits the digitalized acoustic signals to the center server. The server system issues an alert once the algorithm identifies an incident. The performance of the system was evaluated thoroughly in two steps: first, in a controlled tunnel environment using the recorded incident sounds, and second, in an uncontrolled tunnel environment using real-world incident sounds. As a result, the detection rates ranged from 80 to 95% at distances from 50 to 10 m in the controlled environment, and 94 % in the uncontrolled environment. The superiority of the developed system to the existing video image and loop detector-based systems lies in its instantaneous detection capability with less than 2 s.

Risk Factors Related to Photo Couplers(P/C) for Signal Transmission by Electronic Devices (전자기기의 신호전송을 위한 Photo Couplers(P/C) 의 위험 요소 발굴)

  • Park, Hyung-Ki;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.28 no.2
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    • pp.26-30
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    • 2013
  • The purpose of this study is to find risk factors by analyzing the operation principle of a photo coupler (P/C) used to remove the noise of electronic devices and establish a base for the performance improvement of developed products. It was found from the P/C circuit analysis of normal products that they were equipped with an electrolytic condenser of $0.1{\mu}F$ to smooth system signals. Due to the epoxy resin packing the external part of the P/C, this study experienced a limit to visually examine the damage to it. It could be seen from the analysis of electric characteristics of the P/C that the forward voltage ($V_f$) and reverse current ($I_r$) were 1.3 V and 10 uA, respectively. In addition, it is required that the breakdown voltage (VCE) between the collector (C) and emitter (E) be maintained at less than 35 V. The and of the damaged product #1 were comparatively good. However, the measurement of was 100.0 uA. From this, it is thought that a short circuit occurred to the internal circuit. Moreover, from the fact that the of the damaged product #2 was open circuit and the measurement of was 0.0 uA, it is thought that the collector and emitter was separated or insulation resistance was significantly high. Furthermore, from the fact that the of the damaged product #3 was open circuit and the measurement of was 0.0 uA, it is thought that the space between the collector (C) and emitter (E) failed to meet the design standard or that they were separated. Therefore, it is thought that fabricating the P/C by increasing the reverse current 10 mA to 50 mA will prevent its malfunction.

Study on threshold values of a intensity-of-congestion measure for operations evaluation at signalized intersections based on traffic flow information (교통소통 정보기반 신호교차로 운영평가를 위한 혼잡강도 지표 임계값 연구)

  • Kim, Jin-Tae;Cho, Yongbin
    • International Journal of Highway Engineering
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    • v.20 no.3
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    • pp.85-92
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    • 2018
  • PURPOSES : In this study, analyze the characteristics of IOC indicator 'threshold' which is needed when evaluating the traffic signal operation status with ESPRESSO in various grade road traffic environment of Seoul metropolitan city and derive suggested value to use in field practice. METHODS : Using the computerized database program (Postgresql), we extracted data with regional characteristics (Arterial, Collector road) and temporal characteristics (peak hour, non-peak hour). Analysis of variance and Duncan's validation were performed using statistical analysis program (SPSS) to confirm whether the extracted data contains statistical significance. RESULTS : The analysis period of the main and secondary arterial roads was confirmed to be suitable from 14 days to 60 days. For the arterial, it is suggested to use 20 km/h as the critical speed for PM peak hour and weekly non peak hour. It is suggested to use 25 km/h as the critical speed for AM peak hour and night non peak hour. As for the collector road, it is suggested to use 20 km/h as the critical speed for PM peak hour and weekly non peak hour. It is suggested to use 30 km/h as the critical speed for AM peak hour and night non peak hour. CONCLUSIONS : It is meaningful from a methodological point of view that it is possible to make a reasonable comparative analysis on the signal intersection pre-post analysis when the signal operation DB is renewed by breaking the existing traffic signal operation evaluation method.

Investigation of the Sensitivity Depletion Laws for Rhodium Self-Powered Neutrorn Detectors (SPNDs)

  • Kim, Gil-Gon;Cho, Nam-Zin
    • Nuclear Engineering and Technology
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    • v.33 no.2
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    • pp.121-131
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    • 2001
  • An investigation of the sensitivity depletion laws for rhodium SPNDs was performed to reduce the uncertainty of the sensitivity depletion laws used in Combustion Engineering (CE) reactors and to develop calculational tools that provide the sensitivity depletion laws to interpret the signal of the newly designed rhodium SPND into the local neutron flux. The calculational tools developed in this work are computer programs for a time-dependent neutron flux distribution in the rhodium emitter during depletion and for a time-dependent beta escape probability that a beta particle generated in the emitter escapes into the collector. These programs provide the sensitivity depletion laws and show the reduction of the uncertainty by about 1 % compared to that of the method employed by CE in interpreting the signal into the local neutron flux. A reduction in the uncertainty by 1 % in interpreting the signal into the local neutron flux reduces the uncertainty tv about 1 % in interpreting the signal into the local power and lengthens the lifetime of the rhodium SPND by about 10% or more.

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Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer

  • Lee, Sang-Heung;Kim, Sang-Hoon;Lee, Ja-Yol;Bae, Hyun-Cheol;Lee, Seung-Yun;Kang, Jin-Yeong;Kim, Bo-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.2
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    • pp.114-118
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    • 2006
  • In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.