• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• 한국분말재료학회지
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• 제24권6호
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• pp.431-436
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• 2017

SiAlON-based ceramics are some of the most typical oxynitride ceramic materials, which can be used as cutting tools for heat-resistant super-alloys (HRSA). SiAlON can be fabricated by using gas-pressure reactive sintering from the raw materials, nitrides and oxides such as $Si_3N_4$, AlN, $Al_2O_3$, and $Yb_2O_3$. In this study, we fabricate $Yb_{m/3}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$ (m=0.3, n=1.9, 2.3, 2.7) ceramics by using gas-pressure sintering at different sintering temperatures. Then, the densification behavior, phase formation, microstructure, and hardness of the sintered specimens are characterized. We obtain a fully densified specimen with ${\beta}$-SiAlON after gas-pressure sintering at $1820^{\circ}C$ for 90 min. under 10 atm $N_2$ pressure. These SiAlON ceramic materials exhibited hardness values of ~92.9 HRA. The potential of these SiAlON ceramics for cutting tool application is also discussed.

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.915-918
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• 2007

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

• 한국재료학회지
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• 제24권11호
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• pp.573-577
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• 2014

The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.

• 한국수소및신에너지학회논문집
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• 제26권4호
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• pp.339-346
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• 2015

The synthesis of Fischer-Tropsch (FT) oil is the catalytic hydrogenation of CO to give a range of products, which can be used for the production of high-quality diesel fuel, gasoline and linear chemicals. This studied catalyst was prepared Cobalt-supported alumina and silica by the incipient wet impregnation of the nitrates of cobalt, promoter and organic solvent with supports. Cobalt catalysts were calcined at $350^{\circ}C$ before being loaded into the FT reactors. After the reduction of catalyst has been carried out under $450^{\circ}C$ for 24h, FT reaction of the catalyst has been carried out at GHSV of 4,000/hr under $200^{\circ}C$ and 20atm. From these experimental results, we have obtained the results as following; In case of $SiO_2$ catalysts, the activity of 12wt% $Cobalt-SiO_2$ synthesized by organic solvent was about 2 or 3 times higher than the activity of 12wt% $Cobalt-SiO_2$ catalyst synthesized without organic solvent. In particular, the activity of the $Cobalt-SiO_2$ catalyst prepared in the presence of an organic solvent P was two to three times higher than that of the $Cobalt-SiO_2$ catalyst prepared without the organic solvent. Effect of Cr and Cu metal as a promoter was found little. 200 h long-term activity test was performed with a $Co/SiO_2$ catalyst prepared in the presence of an organic solvent of Glyoxal solution.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• 한국재료학회지
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• 제10권3호
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• pp.199-203
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• 2000

세라믹 타겟인 Ta$_2$O(sub)5을 장착한 rf-마그네트론 스퍼터를 이용하여 Ta$_2$O(sub)5 완충층을 증착하고, Sr(sub)0.8Bi(sub)2.4Ta$_2$O(sbu)9 용액을 사용하여 MOD 법에 의해 SBT 막을 성장시킨 metal/ferroelectric/insulator/semiconductor (MFIS) 구조인 Pt/SBT/Ta$_2$O(sub)5/Si 구조의 Ta$_2$O(sub)5 완충층 증착시의 $O_2$유량비, Ta$_2$O(sub)5 완충층 두께에 따른 전기적 특성을 조사하였다. 그리고 Ta$_2$O(sub)5 박막의 완충층으로써의 효과를 확인하기 위해 Pt/SBT/Ta$_2$O(sub)5/Si 구조와 Pt/SBT/Si 구조의 전기적 특성을 비교하였다. Ta$_2$O(sub)5 완충층 증착시의 $O_2$유량비가 0%일 때는 전형적인 MFIS 구조의 C-V 특성을 얻지 못하였으며, 20%의 $O_2$유량비일 때 가장 큰 메모리 윈도우 값을 얻었다. 그리고 $O_2$유량비가 40%, 60%로 증가할수록 메모리 윈도우는 감소하였다. Ta$_2$O(sub)5 완충층의 두께의 변화에 대한 C-V 특성에서는 36nm의 Ta$_2$O(sub)5 두께에서 가장 큰 메모리 값을 얻었다. Pt/SBT/Si 구조의 메모리 윈도우 값과 누설전류 특성은 Pt/SBT/Ta$_2$O(sub)5/Si 구조의 값에 비해 크게 떨어졌으며, 따라서 Ta$_2$O(sub)5 막이 우수한 완충층으로써의 역할을 함을 알았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.36-36
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• 1998

• 한국결정성장학회지
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• 제29권1호
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• pp.12-18
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• 2019

스케일업된 초음파 분무 열분해 공정을 이용하여 양산용 구형 $SiO_2$ 분말을 합성하였다. 초음파 분무 열분해 공정에 사용된 전구체는 20 nm에서 30 nm의 $SiO_2$ 입자를 포함한 수계 $SiO_2$ 졸을 사용하였다. 초음파 분무 열분해 공정의 구동 조건과 전구체 조건의 변화가 합성된 $SiO_2$ 입자에 미치는 영향을 알아보기 위해 반응 온도, 운반 기체 공급 속도 그리고 전구체인 수계 $SiO_2$ 졸의 농도를 조절하였다. 합성된 $SiO_2$ 입자는 공통적으로 반비정질상, 구 형태의 매끄러운 표면을 나타내었다. 구형 $SiO_2$ 입자의 크기는 반응 온도가 증가 또는 전구체 농도가 감소함에 따라 감소하였다. 또한 운반 기체 공급 속도가 증가할수록 합성된 $SiO_2$ 입자의 크기는 증가하였다. 스케일업 규모와 실험실 규모의 초음파 분무 열분해 공정의 차이점을 비교하였고, 반응관 내부 체류시간이 상대적으로 짧은 실험실 규모의 초음파 분무 열분해 공정에서 합성된 $SiO_2$ 입자가 상대적으로 큰 입도를 나타내었다.