• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.560-560
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• 2006

• Proceedings of the Plant Resources Society of Korea Conference
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• 2018.04a
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• pp.59-59
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• 2018

Panax ginseng Meyer (Korean ginseng) is in the spotlight of Oriental medicine and is proclaimed as the king of medicinal plants owing to its adaptogenic characteristics. Ginseng root rot is a devastating disease caused by the fungus, Ilyonectria mors-panacis that generally attacks younger roots (~2 years), leading to defects in root quality, ginsenoside accumulation and also life cycle of the plant. Hence, there is an indispensable need to develop strategies resulting in tolerance against ginseng root rot. In the present study, we evaluated the effect of silica nanoparticles(N-SiO2) in Panax ginseng during I. mors-panacis infection. Long term analysis (30 dpi) revealed a striking 50% reduction in disease severity index upon 1mM and 2mM treatment of N-SiO2. However, N-SiO2 did not have any direct antifungal activity against I. mors-panacis. Membrane bound sugar efflux transporter, SWEET (Sugars Will Eventually be Exported Transporters) was identified in ginseng and as expected, its expression was suppressed upon N-SiO2 treatment in the root rot pathosystem. Furthermore, the total and reducing sugars in the apoplastic fluid clearly revealed that N-SiO2 regulates sugar efflux into apoplast. In a nut shell, N-SiO2 administration induces transcriptional reprogramming in ginseng roots, leading to regulated sugar efflux into apoplast resulting in enhanced tolerance against I. mors-panacis.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.146-151
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• 1995

We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.

• Journal of Surface Science and Engineering
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• v.12 no.2
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• pp.75-83
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• 1979

The Rates of formation and heats of activation for the intermatallic Compound Layers between Cold rolled sheet and molten aluminium &ath (adding small amounts of silicon) has been determined by Continous aluminizing method in the temperature range of 680$^{\circ}$ to 760$^{\circ}C$ and with immerssion time. The structure of the intermetallic Compound Layers was the shape of "Tongues" in pure Al-Bath and Al-Bath Containing 1% Si, But in Al-5% Si Bath was "Band" the Composition of the intermetallic Compound Layers were checked by microhardness measurements and X-Ray probe micro analyzer. FeAl intermetallic Compound layer was found to be uniform in pure Al-Bath and Al-5% Si Bath, But Fe Al intermetallic Compound Layer was shown in Al-1% Si Bath. The growth Rates of the intermetallic Compound Layers was most rapidly increased at Temperatures from 720$^{\circ}$ to 760$^{\circ}C$, at the immorsion time above 60 Second in pure Al-Bath, But in Al-1% Si Bath was solwly increased for the same conditions, and then in Al-5% Si Bath was hardly effected by these experimental condition. Heasts of activation of 29, 46 Kcal per mole which calculuted from Layer growth experiments were found in pure Al-Bath, Al-1% Si Bath respectively.

• Journal of Ocean Engineering and Technology
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• v.25 no.3
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• pp.28-33
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• 2011

The thermal shock properties of SiC materials were investigated for high temperature applications. In particular, the effect of thermal shock temperature on the flexural strength of SiC materials was evaluated, in conjunction with a detailed analysis of their microstructures. The efficiency of a nondestructive technique using ultrasonic waves was also examined for the characterization of SiC materials suffering from a cyclic thermal shock history. SiC materials were fabricated by a liquid phase sintering process (LPS) associated with hot pressing, using a commercial submicron SiC powder. In the materials, a complex mixture of $Al_2O_3$ and $Y_2O_3$ powders was used as a sintering additive for the densification of the microstructure. Both the microstructure and mechanical properties of the sintered SiC materials were investigated using SEM, XRD, and a three point bending test. The SiC materials had a high density of about 3.12 Mg/m3 and an excellent flexural strength of about 700 MPa, accompanying the creation of a secondary phase in the microstructure. The SiC materials exhibited a rapid propagation of cracks with an increase in the thermal shock temperature. The flexural strength of the SiC materials was greatly decreased at thermal shock temperatures higher than $700^{\circ}C$, due to the creation of microcracks and their propagation. In addition, the SiC materials had a clear tendency for a variation in the attenuation coefficient in ultrasonic waves with an increase in thermal shock cycles.

• Journal of Ocean Engineering and Technology
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• v.23 no.6
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• pp.93-98
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• 2009

The mechanical properties of $MoSi_2$ based composites containing various types of reinforcement, such as SiC, $ZrO_2$, and W, were investigated, based on detailed examinations of their microstructures. $MoSi_2$ based composites were fabricated at a temperature of $1350^{\circ}C$ using a hot-press device. The volume fraction of SiC and $ZrO_2$ particles in this composite system was fixed as 20%. The volume fraction of three types of W particles was changed from 10% to 30%. The characteristics of the $MoSi_2$ based composites were determined by means of optical microscopy and a three-point bending test. The addition of W particles to the $MoSi_2$ powders exhibited a sufficient improvement in the microstructure and mechanical property of the sintered $MoSi_2$ materials, compared to those of SiC and $ZrO_2$ particles. In particular, W/$MoSi_2$ composites containing W particles of 20 vol% represented a good flexural strength of about 530MPa at room temperature, accompanying a relative density of about 92%. The flexural strength of the W/$MoSi_2$ composites tended to decrease with an increase in the average size of the W particles.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.128-135
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• 2013

This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.421-427
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• 1996

초미립 SiC 분말을 2차상으로 Si3N4에 첨가하여 SiC/Si3N4 나노 복합체를 핫프레스법과 가스압소결고 제조하였다. 2차상으로 첨가한 SiC의 입자 크기가 $\beta$-Si3N4 나노 복합체를 제조할 수 있었다. 사온에서 80$0^{\circ}C$까지는 강도의 100$0^{\circ}C$이상에서는 강도는 급격한 감소를 보였으며 이는 소결조제로 첨가한 AI2O3, Y2O3와 SiO2가 $\beta$-Si3N4의 입계에 유리상을 형성하였기 때문에 해석된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.310-313
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• 2005

CW laser dopant activation (CLDA) is suggested as an alternative to conventional thermal annealing. The sheet resistance of the ion doped poly-Si after CLDA is sufficiently low compared to the value measured after thermal annealing. The surface damage due to ion doping on the poly-Si can be recovered while CW laser scan for dopant activation. Therefore, the CLDA can be applied to LTPS processing.

• Journal of Korea Foundry Society
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• v.14 no.5
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• pp.429-437
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• 1994

Influence of interfacial structure between matrix and particle in A356/coated SiC composite fabricated by squeeze casting method was studied. Experimental variables are types of coated metallic film on SiC particles such as Cu, Ni-P, and applied pressure for squeeze casting. It was found that coating treatment on SiC particles improves the wetting of liquid A356 alloy on SiC particles. SiC particle distribution is very homogeneous in A356 matrix alloy which is fabricated by squeeze casting. Analysing the surface morphology of fractured A356/coated SiC, it was concluded that metallic thin film by coating treatment on SiC particle improves the interfacial bonding between particle and matrix, and so does on mechanical properties such as tensile strength. However, there was on significant difference in hardness between those composite made of as-received SiC particle and coated SiC particle.