• 한국지구과학회지
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• 제27권1호
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• pp.49-60
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• 2006

본 연구는 나주지역 하상퇴적물에 대한 지구화학적 특성 연구이다. 이를 위해 1차 수계를 대상으로 139개의 하상퇴적물 시료를 채취하였다. 채취된 시료는 실험실에서 자연 건조시켰으며, XRF, ICP-AES, NAA를 이용하여 화학분석을 실시하였다. 기반암에 따른 지구화학적 특성을 알아보기 위하여, 화강암질편마암 지역, 편암류 지역, 화강암류 지역, 사질암 지역, 응회암 지역, 안산암 지역, 유문암 지역으로 분류하였다. 나주지역 하상퇴적물의 지질집단별 주성분원소 평균함량은 $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$이다. 주성분원소의 평균함량 비교에서 $Al_2O_3$와 $K_2O$는 화강암질편마암 지역에서, $Fe_2O_3,\;CaO,\;P_2O_5$는 응회암 지역에서, MgO와 $TiO_2$는 안산암 지역에서, $Na_2O$는 유문암 지역에서 높고, $SiO_2$와 MnO 함량은 사질암 지역에서 약간 높다. 미량성분 및 희토류원소의 지질집단별 평균함량은 $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$이다. Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, Yb 평균함량은 화강암질편마암 지역에서, Ba, Co, Cr 평균함량은 편암류 지역에서, Nb, Ni, Zr 평균함량은 사질암 지역에서, Sr 평균함량은 응회암 지역에서 높고, Be, Cu, V, Sc, Zn 평균함량은 안산암 지역에서 다른 지질집단에서 보다 높다.

• Korean Chemical Engineering Research
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• 제49권6호
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• pp.752-757
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• 2011

암모니아수와 zinc acetate로부터 액상 수열합성법에 의한 ZnO의 제조에 있어 반응온도, 반응물의 농도와 혼합방법, 용액의 pH 등 반응조건에 따른 ZnO 입자의 형상과 입자분포 등 제조특성을 고찰하고, UV 조사하에 tartrazine의 광분해를 측정하여 합성된 ZnO의 광촉매로서의 성능을 확인하였다. 반응용액의 pH가 높을수록 ZnO 입자의 평균 크기는 증가하였고, zinc acetate의 농도가 증가할수록 그리고 반응온도가 증가할수록 입자의 크기는 감소하였다. 반응용액의 혼합시 암모니아수 주입 후에 zinc acetate를 첨가하였을 경우 더 작은 입자를 얻을 수 있었다. 최소 크기의 ZnO 입자의 생성을 위한 최적 조건은 용액의 pH 11.2, zinc acetate의 농도 0.6 M, 반응온도 $90^{\circ}C$였으며, 입자 평균크기는 3.133 ${\mu}$m이었다. 합성온도 $80^{\circ}C$, zinc acetate 농도 1.0M 및 반응용액의 pH 11.2의 조건에서 합성된 ZnO에 의한 tartrazine의 광촉매 분해는 분해시간 60분에서 약 97%의 분해율을 보였다.

• 한국세라믹학회지
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• 제30권5호
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• pp.357-364
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• 1993

Chemical reaction occurred in the interface of Mn-Zn ferrite and glass after bonding. Effects of the formation of reaction layer on the magnetic properties were investigated. The composition of glass was 23PbO-61SiO2-6ZnO-8Na2O-2K2O and the ferrite was chosen to have a high permeability. Toroid samples of ferrites bonded with glasses, were heat-treated at $700^{\circ}C$, 80$0^{\circ}C$ and 90$0^{\circ}C$ for 1h. The reaction was observed to increase with bonding temperature, resulting in the development of reaction layer. Subsequently the initial permeability was found to be decreased. The permeabilities decreased by 25% with increasing bonding temperature from $700^{\circ}C$ to 80$0^{\circ}C$. At the bonding temperature of 90$0^{\circ}C$, the permeability was decreased by 45%, compared to that of 80$0^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1297-1298
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• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• 한국지구과학회지
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• 제32권7호
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• pp.707-718
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• 2011

보성-화순지역 하상퇴적물에 대한 지질집단별 자연배경치와 지구화학적 특성에 대해 연구하였다. 이를 위해 1차 수계를 따라 하상퇴적물시료 186개를 채취하였고, 실험실에서 자연건조 시킨 후, XRF, ICP-AES, NAA분석을 실시하였다. 하상퇴적물의 지질집단별 자연배경치와 지구화학적 특성을 알기 위해, 시료를 화강암질편마암(GGn)지역과 반상변정질편마암(PGn)지역으로 분리하였다. 화강암질편마암지역의 주성분원소 함량은 $SiO_2$ 45.5-73.09 wt.%, $Al_2O_3$ 12-20.76 wt.%, $Fe_2O_3$(T) 3.72-8.85 wt.%, $K_2O$ 2.38-4.2 wt.%, MgO 0.75-2.77 wt.%, $Na_2O$ 0.78-1.88 wt.%, CaO 0.27-2.1 wt.%, $TiO_2$ 0.56-1.72 wt.%, $P_2O_5$ 0.06-0.73 wt.% and MnO 0.03-0.95 wt.%이고 반상변정질편마암지역의 주성분원소 함량은 $SiO_2$ 43.74-70.71 wt.%, $Al_2O_3$ 11.54-25.05 wt.%, $Fe_2O_3$(T) 3.44-13.46 wt.%, $K_2O$ 2.08-3.86 wt.%, MgO 0.65-2.99 wt.%, $Na_2O$ 0.63-1.7 wt.%, CaO 0.35-2.07 wt.%, $TiO_2$ 0.68-4.17wt.%, $P_2O_5$ 0.1-0.31 wt.% and MnO 0.07-0.33 wt.%이다. 화강암질편마암지역 하상퇴적물의 위해원소 함량은 크롬 41.7-242 ppm, 코발트 7.6-25.1 ppm, 니켈 12-61 ppm, 구리 10-47 ppm, 아연 48.5-412 ppm, 납 17-215 ppm이고 반상변정질편마암지역은 크롬 29.6-454 ppm, 코발트 5.9-53.7 ppm, 니켈 8.7-287 ppm, 구리 6.4-134 ppm, 아연 43.6-370 ppm, 납 15-37 ppm이다. 화강암질편마암지역에서 크롬은 MgO와 코발트는 $Al_2O_3$, $Fe_2O_3$(T), MgO와 니켈은 $Fe_2O_3$(T), CaO, MgO와 높은 상관성을 가지나, 구리, 아연, 납은 비교적 낮은 상관성을 보였다. 반상변정질편마암지역에서 일반적으로 크롬, 코발트, 니켈, 구리는 주성분원소와 대부분 높은 상관성을 보였으나, 아연과 납은 낮은 상관성을 보였다.

• ETRI Journal
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• 제31권6호
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국세라믹학회지
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• 제48권4호
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• pp.269-277
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• 2011

Glass-ceramics based on lithium disilicate($Li_2Si_2O_5$) are prepared by heat-treatment of glasses in a system of $SiO_2-Li_2O-K_2O-Al_2O_3$ with different compositions. The crystallization heat-treatment was conducted at the temperature range of $700{\sim}900^{\circ}C$ and samples were analyzed by XRD and SEM. Mechanical properties were determined by a Vicker's hardness and 4 point bending strength. When $SiO_2/Li_2O$ ratio increased, cristobalite and tridymite crystals showed more predominate than lithium disilicate crystals. Increase in $Al_2O_3$ contents in the glass suppressed crystallzation of lithium disilicate crystals. Increase in ZnO, $B_2O_3$ contents in the glass decreased crystallization temperature of lithium disilicate crystals, and increased mechanical properties because of the reduction of the lithium disilicate crystal size.

• 한국재료학회지
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• 제23권6호
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1779-1782
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• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.