• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.55-59
• /
• 1999

One of lead free glass, Bi based solder glass is investigated for electronic packaging application. The melting temperature of glass about $550^{\circ}C$ at Bi based glass (70wt% $B_2O_3$ + l5wt%$B_2O_3$ + 8wt% $SiO_2$ + 2wt% $P_2O_5$ + 4wt% $A1_2O_3$ +lwt% ZnO) and varied with $P_2O_5$ content in this system. Crystallized glasses were obtainded after 1hr heat teratment at $450^{\circ}C$ with 10wt% of $P_2O_5$ addition. Much higher melting temperature was observed at $B_2O_3$ rich composition area.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.429.2-429.2
• /
• 2014

ZnO nanowire is known as synthesizable and good mechanical properties. And, stimuli-responsive polymer is widely used in the application of tunable sensing device. So, we combined these characteristics to make precise tunable sensing devise. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using nanosphere template with various conditions via hydrothermal process. Also, pH-temperature dependant tuning ability of nanostructure was studied. The brief experimental scheme is as follow. First, Zno seed layer was coated on a si wafer ($20{\times}20mm$) by spin coater. And then $1.15{\mu}m$ sized close-packed PS nanospheres were formed on a cleaned si substrate by using gas-liquid-solid interfacial self-assembly method. After that, zinc oxide nanowires were synthesized using hydrothermal method. Before the wire growth, to specify the growth site, heat treatment was performed. Finally, NIPAM(N-Isopropylacrylamide) was coated onto as-fabricated nanostructure and irradiated by UV light to form the PNIPAM network. The morphology, structures and optical properties are investigated by FE-SEM(Field Emission Scanning electron Microscopy), XRD(X-ray diffraction), OM(Optical microscopy), and WCA(water contact angle).

• Clean Technology
• /
• v.9 no.4
• /
• pp.189-196
• /
• 2003

ZnO-CuO mixed sorbents for desulfurization in hot gas cleaning process Were prepared and investigation on their characteristics was performed in this study. The rate of sulfidation increased as the amount of copper oxide in the composite sorbent was raised. TPO experiments were carried out to investigate the characteristics of the regeneration of the sorbents with severa1 different ratios of Zno to CuO. Copper sulfate was formed at temperatures above $400^{\circ}C$, while it was decomposed by pyrolysis above $700^{\circ}C$. $SO_2$ slippage due to $CuSO_4$ was observed in the sorbent regenerated at temperatures above $600^{\circ}C$. However, it was not observed when regenerated above $700^{\circ}C$. It was confirmed in the ZnO-CuO mixed sorbent system that CuO suppressed the vaporization of ZnO on the one hand and Zno minimized the $SO_2$ slippage due to CuO on the other hand.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.4
• /
• pp.137-146
• /
• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.942-945
• /
• 2006

The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.170-170
• /
• 2012

최근 주목받고 있는 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT (a-Si;H)에 비해 비정질 상태에서도 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭에 의해 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광 소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 하지만, 실제 디스플레이가 동작하는 동안 스위칭 TFT는 백라이트 또는 외부에서 들어오는 빛에 지속적으로 노출되게 되고, 이 빛에 의해서 TFT 소자의 신뢰성에 악영향을 끼친다. 또한, 디스플레이가 장시간 동안 동작 하면 내부 온도가 상승하게 되고 이에 따른 온도에 의한 신뢰성 문제도 동시에 고려되어야 한다. 특히, 실제 AM-LCD에서 스위칭 TFT는 양의 게이트 전압보다 음의 게이트 전압에 의해서 약 500 배 가량 더 긴 시간의 스트레스를 받기 때문에 음의 게이트 전압에 대한 신뢰성 평가는 대단히 중요한 이슈이다. 스트레스에 의한 문턱 전압의 변화는 게이트 절연막과 반도체 채널 사이의 계면 또는 게이트 절연막의 벌크 트랩에 의한 것으로 게이트 절연막의 선택에 따라서 신뢰성을 효과적으로 개선시킬 수 있다. 본 연구에서는 적층된 $Si_3N_4/SiO_2$ (NO 구조) 이중층 구조를 게이트 절연막으로 사용하고, 완충층의 역할을 하는 $SiO_2$막의 두께에 따른 소자의 전기적 특성 및 신뢰성을 평가하였다. a-IGZO TFT 소자의 전기적 특성과 신뢰성 평가를 위하여 간단한 구조의 pseudo-MOS field effect transistor (${\Psi}$-MOSFET) 방법을 이용하였다. 제작된 소자의 최적화된 $SiO_2$ 완충층의 두께는 20 nm이고 $12.3cm^2/V{\cdot}s$의 유효 전계 이동도, 148 mV/dec의 subthreshold swing, $4.52{\times}10^{11}cm^{-2}$의 계면 트랩, negative bias illumination stress에서 1.23 V의 문턱 전압 변화율, negative bias temperature illumination stress에서 2.06 V의 문턱 전압 변화율을 보여 뛰어난 전기적, 신뢰성 특성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.75-81
• /
• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.73-79
• /
• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of Powder Materials
• /
• v.14 no.6
• /
• pp.372-379
• /
• 2007

The microstructure, mechanical and electrochemical properties of plasma electrolytic coatings (PEO) coatings on Mg-4.3 wt%Zn-1.0 wt%Y and Mg-1.0 wt%Zn-2.0 wt%Y alloys prepared by gas atomization, followed by compaction at 320 for 10 min under the pressure of 700 MPa and sintering at 380 and 420 respectively for 24 h, were investigated, which was compared with the cast Mg-1.0 wt%Zn alloy. All coatings consisting of MgO and $Mg_2SiO_4$ oxides showed porous and coarse surface features with some volcano top-like pores distributed disorderly and cracks between pores. In particular, the surface of coatings on Mg-1.0 wt%Zn-2.0 wt%Y alloy showed smaller area of pores and cracks compared to the Mg-4.3 wt%Zn-1.0 wt%Y and Mg-1.0 wt%Zn alloys. The cross section micro-hardness of coatings on the gas atomized Mg-Zn-Y alloys was higher than that on the cast Mg-1.0 wt%Zn alloy. Additionally, the coated Mg-1.0 wt%Zn-2.0 wt%Y alloy exhibited the best corrosion resistance in 3.5%NaCl solution. It could be concluded that the addition of Y has a beneficial effect on the formation of protective and hard coatings on Mg alloys by plasma electrolytic oxidation treatment.

• Economic and Environmental Geology
• /
• v.32 no.3
• /
• pp.247-260
• /
• 1999

Geochermical characteristics of the fluvial sediments deprnding on particle size distribution size were investigated in the respect of majir, minor and rare eath element chemisitry. Ratios of $Al_{2}O_{3}/Na_{2}O$ and $K_{2}O/Na_{2}O$ of the sediments show the homogeneous valus, and partly positive correlation with $SiO_{2}/Al_{2}O_{3}$, respecively. Characteristics of minor element ratios (V/Ni, Cr/V, Ni/Co and Zr/Hf)are within the lower and narrow range. Thesesuggested that sediment sources may be acidic to intermediate granitic rock, and may be explained by simple weathering and sedimentation. With increasing SiO2 contents, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO and MgO decreased, but those of $K_{2}O$ and $Na_{2}O$ increased, Concentrations of Ba, Be, Cs, Cu, Li, Ni, Sr, V and Zr show comparatively normal negative and some positive trends. Compared with the mean composition of granite, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, MnO, CaO and MgO in the sediments of the study area were highly enriced. Among some minor and rare earth elements, concentrations of As, Cd, Cu, and V were enriched, but those of Be, Ce, Rb, Sc, Sr and Zn were depleted when compared with average composition of granite. By decreasing of particle size fractions, SiO2, Rb and Sr conterts decreased, but concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO, MgO, $TiO_{2}$, MgO, $P_{2}O_{5}$, Be, Cu, Hf, Pb, V and Zr increased. From the correlations between particle size fractions and element concenreations, some elements of $Fe_{2}O_{3}$, CaO, MgO, $P_{2}O_{5}$, Cu, Ni, Zn and Zr showed typical trends in the secondary contramination sediments. These trends are typically shown under 100 mesh fractions. It indicates that the fraction of minus 100 mesh is the optimum size fraction for geochemical and environmental survey.