• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.80-80
• /
• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.6
• /
• pp.753-758
• /
• 2018

We investigated annealing effects of seed layers on the properties of ZnO nanorods grown on the seed layers. ZnO nanorods were grown by a hydrothermal method. ~100 nm-thick ZnO films were sputtered on oxidized Si wafers and quartz as seed layers. The ZnO films were annealed at $400^{\circ}C$, $600^{\circ}C$, and $800^{\circ}C$, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 3 hours in the mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine. X-ray diffraction was carried out to estimate the crystallinity and strain of ZnO films and nanorods. A field emission scanning electron microscope was employed to observe the morphology of the films and nanorods. PL(photoluminescence) measurements were conducted with 266 nm light. It was found that the annealing of seed layers increase the growth rate of nanorods, and change compressive strain of nanorods to tensile strain. The intensity of PL in the UV region reduced by using the annealed seed layers.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.623-627
• /
• 2010

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.8
• /
• pp.707-711
• /
• 2006

ZnO was doped up to 0.3 wt% for improving the electrical properties of lead-free $[Li_{0.04}(Na_{0.44}Ko_{0.52})-(Nb_{0.86}\;Ta_{0.10}\;Sb_{0.04})]O_3$ piezoelectric ceramics. The ceramics were fabricated with the conventional sintering processes. Crystal structure of the samples was tetragonal phase regardless of ZnO amount. However, the piezoelectric properties were varied with the ZnO amount. The electro-mechanical coupling factor $(k_p)$ was with the ZnO amount up to 0.2 wt% but decreased with the further addition. the maximum value of $k_p$ was 0.475. Density, piezoelectric charge constant and relative dielectric constant was also showed maximum value at 0.2 wt%. The maximum values are $4.75g/cm^3$, 275 pC/N, 1403, respectively. In contrast, the mechanical quality factor $(Q_m)$ was not varied with increasing the ZnO addition up to 0.2 wt% but rapidly increased at 0.3 wt%.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.1
• /
• pp.34-41
• /
• 2017

In this study, the effect on the zinc nuclei crystallization caused by changes preprocessing of the zinc crystalline glaze preparation has been studied. The mechanism of the nuclei formation in the crystalline glaze and development of the nuclei by studying the preprocessing step was explained. The preprocessing step was improved by altering mixing process of the materials prior to sintering: number of sieving dispersion process and ultra-sonication prove tests with various duration of sonication. According to the result, the sieving and sonication of the starting materials facilitated the interface reactions of $ZnO-SiO_2$ from $680^{\circ}C$ where low temperature willemite is formulated, and altered Si bonding for the easier bonding between Zn-Si. In other words, solely sieving was enough to accelerate the formation of willemite in low temperature. When the particles were distributed evenly by sonication, the willemite formation was even more significant.

• Journal of information and communication convergence engineering
• /
• v.7 no.4
• /
• pp.530-534
• /
• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio $O_2/(O_2+Ar)$ were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.355-356
• /
• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

• Journal of information and communication convergence engineering
• /
• v.1 no.4
• /
• pp.199-204
• /
• 2003

In this paper, we present the thermal annealing effects of the W/$SiO_2$ multi-layer reflectors in ZnO-based FBAR devices with cobalt (Co) electrodes in comparison with those with aluminum (Al) electrodes. Various thermal annealing conditions have been implemented on the W/$SiO_2$ multi-layer reflectors formed on p-type (100) silicon substrates. The resonance characteristics could be significantly improved due to the thermal annealing and were observed to depend strongly on the annealing conditions applied to the reflectors. Particularly, the FBAR devices with the W/$SiO_2$ multi- layer reflectors annealed at $400^{\circ}C$/30min have shown superior resonance characteristics in terms of return loss and quality-factor (Q-factor). In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics as compared with the Al electrodes. As a result, the combined use of both the thermal annealing and Co electrodes seems very useful to more effectively improve the resonance characteristics of the FBAR devices with the W/$SiO_2$ multi-layer reflectors.

• Applied Chemistry for Engineering
• /
• v.20 no.6
• /
• pp.617-621
• /
• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.408-409
• /
• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.