Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.355-356
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- 2008
The study of the characteristic of n-ZnO:In/p-Si(111) heterostructure using Pulsed Laser Deposition
PLD법으로 증착된 n-ZnO:In/p-Si(111) 이종접합구조의 특성연구
- Jang, B.L. (Department of Semiconductor Physics, Korea Maritime University) ;
- Lee, J.Y. (Department of Semiconductor Physics, Korea Maritime University) ;
- Lee, J.H. (Department of Semiconductor Physics, Korea Maritime University) ;
- Kim, J.J. (Department of Semiconductor Physics, Korea Maritime University) ;
- Kim, H.S. (Department of Semiconductor Physics, Korea Maritime University) ;
- Lee, D.W. (Department of Information Material Engineering, Dong-Eui University) ;
- Lee, W.J. (Department of Information Material Engineering, Dong-Eui University) ;
- Cho, H.K. (School of Material Science Engineering, Sungkyunkwan University) ;
- Lee, H.S. (Department of Material science and Metallurgy, Kyongpook University)
- 장보라 (한국해양대학교) ;
- 이주영 (한국해양대학교) ;
- 이종훈 (한국해양대학교) ;
- 김준제 (한국해양대학교) ;
- 김홍승 (한국해양대학교) ;
- 이동욱 (동의대학교) ;
- 이원재 (동의대학교) ;
- 조형균 (성균관대학교) ;
- 이호성 (경북대학교)
- Published : 2008.11.06
Abstract
In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20